Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposition.The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy.The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality,such as large grain size,small lattice microstrain and smooth surface morphology on low-cost glass substrates.     

基于光纤Bragg光栅反射波带宽展宽的压力传感研究

报道了一种新颖的光纤Bragg光栅压力传感装置,提出并实现了利用光纤Bragg光栅反射波带宽展宽实现压力传感的新方法.利用压力作用下双孔悬臂梁非均匀应变带动光栅使Bragg反射波漂移的同时带宽展宽,实现压力传感.在0~23.5 N的测量范围内,基于光谱分析仪0.05 nm的光谱分辨率,压力分辨率为0.54 N,带宽最大展宽量2.14 nm,压力响应曲线具有良好的线性.多次测量表明：展宽波型稳定,重复性好.     

利用全光纤干涉解调技术的光纤光栅复用传感系统

提出了一种用于光纤光栅传感波长检测的新方法。系统采用全光纤Mach Zehnder干涉仪,运用动态的自参考相位检测方式,结合微机实时处理技术,实现了对三点复用传感器的高分辨率(0.99pm)解调,单点测量范围达3.32nm。系统结构简单、成本低,可以同时检测静态和低频动态信号。     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.     

Microstructure of a-SiOx:H

A set of a-SiOx :H (0.52 ＜x＜1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250℃. The microstructure andlocal bonding configurations of the films are investigated in detail using micro-Raman scattering,X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It isfound that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:Hand SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si)clusters that are spatially isolated. The average size of the clusters decreases with the increasingoxygen concentration x in the films. The results indicate that the structure of the present films canbe described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by thesubshells of Si2O:H, SiO:H, Si2O3:H, and SiO2.     

单光纤光栅波谱展宽温度压力同时区分测量

报道了利用单光纤布拉格光栅反射波带宽展宽技术实现温度与压力同时区分测量的新方案。通过聚合物材料将光栅粘接于双孔悬臂梁非均匀应变区 ,在压力作用下悬臂梁带动光栅发生非均匀应变 ,使布拉格反射波波长漂移的同时带宽展宽 ,而温度变化仅引起反射波波长漂移。在 2 0～ 10 0℃和 0～ 7.8N的温度和压力测量范围内 ,温度测量精度± 1.1℃ ,压力测量精度± 0 .18N ,布拉格反射波中心波长漂移量和带宽展宽量随温度和压力的变化呈良好的线性关系 ,线性度均高于 99.6 %。多次测量表明 ,此方案的展宽波形稳定 ,重复性好。     

氢化非晶硅氧薄膜微结构

以Raman散射、X射线电子能谱和红外吸收光谱细致研究了PECVD法250℃衬底温度下制备的氢化非晶硅氧(a-SiO_x∶∶H)薄膜的微结构及键构型. 研究表明, 在0.52≤x≤1.58的氧含量范围内，a-SiO_x∶∶H薄膜成分和结构不是均一的，依赖于局域键构型氧化程度的不同，大致存在着5种在一定程度上相互分离的结构组分，即Si, Si₂O(∶H), SiO(∶H), Si₂O₃(∶H)和SiO₂. 其中的Si相以非氢化的非晶硅(a-Si)颗粒形式存在，随氧含量x的增加其尺度持续减小但始终存在. 提出一种多壳层模型来描述a-SiO_x∶H薄膜的结构，认为a-SiO_x∶H薄膜中a-Si颗粒依次为Si₂O(∶H), SiO(∶H), Si₂O₃(∶H)和SiO₂壳层所包围. 随薄膜氧含量x的增加，各壳层厚度相应变化但各自的化学构成基本保持不变.     

一种新颖的温度补偿光纤光栅应力传感测量技术

分析了光纤Bragg光栅的应变响应原理,通过实验观察光纤光栅粘贴在厚度不均的悬臂梁上产生的双峰响应,证明悬臂梁结构的不均匀会使整个光纤光栅受到不同的应力而产生两个反射峰,并且两个反射峰之间的距离随着应力的增加呈线性变化。实验中,当载荷为200g时,两个反射峰之间距离达到0.16nm,而温度变化不会引起两个反射峰之间的变化。利用这种结构的封装,可以克服光纤光栅对温度和应力交叉敏感的问题,消除温度变化引起的应力测量误差,实现一个光纤光栅对应力单参量的测量。     

光纤光栅温度应变智能传感原理及增敏技术研究

文章分析了光纤光栅对温度和应变传感的响应机理，对光纤光栅的纤芯材料选择、光纤光栅的写入方法及封装方法等方面进行了综合评述，在此基础上讨论了实现光纤光栅对温度和应变传感增敏的基本原理和方法，介绍了长周期光纤光栅与光纤布拉格（Bragg)光栅融合测量和如何选用对温度和应变灵敏的纤芯材料，研究了超短脉冲激光直接写入法和如何选用热膨胀系数和弹性模量不同的特种聚合材料对光纤光栅进行封装处理。     

非晶微晶过渡区域硅薄膜的微区喇曼散射研究

通过改变氢气对硅烷气体的稀释程度,并保持其他的沉积参量不变,用等离子体增强化学气相沉积(PECVD)方法成功地制备出处于非晶微晶相变过渡区域的硅薄膜样品.测量了样品的室温光电导和暗电导,样品的光电性能优越,在50mW·cm-2的白光照射下,光电导和暗电导的比值达到106.在室温下用微区喇曼谱研究了薄膜的微结构特性,用高斯函数对喇曼谱进行了拟合分析.结果表明,在我们的样品制备条件下,当H2和SiH4的流量比R较小时,样品表现出典型的非晶硅薄膜的结构特性;随流量比R的增大,薄膜表现出两相结构,其中的微晶成分随 关键词： 非晶硅 薄膜 喇曼散射 微结构