First-principles study of electronic and optical properties in wurtzite Zn1-xCuxO

We perform a first-principles simulation to study the electronic and optical properties of wurtzite Zn1 xCuxO.The simulations are based upon the Perdew-Burke-Ernzerhof form of generalised gradient approximation within the density functional theory.Calculations are carried out in different concentrations.With increasing Cu concentration,the band gap of Zn1 xCuxO decreases due to the shift of valence band.The imaginary part of the dielectric function indicates that the optical transition between O 2p states in the highest valence band and Zn 4s states in the lowest conduction band shifts to the low energy range as the Cu concentration increases.Besides,it is shown that the insertion of Cu atom leads to redshift of the optical absorption edge.Meanwhile,the optical constants of pure ZnO and Zn0.75Cu0.25O,such as loss function,refractive index and reflectivity,are discussed.     

物理学对理工科大学生创新能力培养的作用

创新是一个民族进步的灵魂,是国家兴旺发达的不竭动力．为了培养适应21世纪发展需要的人才,必须着重培养学生的创新意识、创新精神和创新能力,在培养创新人才方面物理学有着其他学科不可替代的作用．经济及科学技术的高速发展对高等教育提出了新的要求,培养新一代基础厚、素质高、能力强、具有创新能力的高级科学技术工程人才是大学的主要职责．     

Auger图示对锰原子共振结构的影响

使用多体微扰理论(many-body perturbation theory, MBPT)计算了锰原子的3p63d54s2→3p53d54s2nd系列里德堡共振结构.在耦合方程方法中考虑了Auger图式,计算表明,Auger图式有效地抑制了3p→nd系列共振结构的发散.     

硫团簇Sn(n=2～8)结构的朗之万分子动力学计算

引入第一原理密度泛函理论，即赝势密度泛函在实空间的有限差分方法和朗之万分子动力学退火技术，对硫团簇Sn(n=2～8)的结构等进行了计算.结果表明，S3, S4, S5, S6, S7和S8的结构对应为C2v, D2h,信封式Cs, D3d (或船式C2v) ,椅式Cs和D4d的对称结构，其结构参数与有实验数据的S2和S6-8吻合较好.从平均原子结合能看，原子数目越多,硫团簇越为稳定.     

稀土离子在KMnF3纳米晶复合玻璃中的微观分布机理

具有单(纯)色上转换荧光发射特性的发光材料,有望在三维显示、照明、生物成像、促进植物生长以及提高太阳能电池光电转换效率等领域得到应用,受到研究人员的广泛关注.本研究通过玻璃热处理析晶的方法,在稀土离子Yb³⁺/Er³⁺共掺的氟硅酸盐玻璃中原位生长出了钙钛矿型的KMn F₃氟化物纳米晶体,并观测到了显著增强的高单色性上转换红色发光.采用具有高分辨率的透射电子显微测试分析技术和第一性原理计算相结合,研究了稀土离子在KMn F₃纳米晶复合微晶玻璃中的掺杂机制,并讨论了稀土离子微观分布和能量传递效应对其上转换发光性能的影响.实验结果表明:稀土离子将通过优先取代KMn F₃晶体中K~+格位的方式选择性富集在具有低声子能量的氟化物纳米晶体中,并由此获得显著增强的上转换发光强度.     

Electronic and optical properties of GaN/AlN quantum dots with adjacent threading dislocations

We present a theory to simulate a coherent GaN QD with an adjacent pure edge threading dislocation by using a finite element method. The piezoelectric effects and the strain modified band edges are investigated in the framework of multi-band $\bm k\cdot \bm p$ theory to calculate the electron and the heavy hole energy levels. The linear optical absorption coefficients corresponding to the interband ground state transition are obtained via the density matrix approach and perturbation expansion method. The results indicate that the strain distribution of the threading dislocation affects the electronic structure. Moreover, the ground state transition behaviour is also influenced by the position of the adjacent threading dislocation.     

大学物理双语试点班教学的研究与探讨

介绍了北京邮电大学大学物理双语试点班的做法,总结了教学过程中的经验和体会,论述了在全校非物理专业推广双语教学的可行性.     

An Accurate Calculation of Potential Energy Curves and Transition Dipole Moment for Low-Lying Electronic States of CO

In this paper, potential energy curves for the X 1 Σ+ , a3 Π, a′3 Σ+ , d3 , A1 Π and I 1 Σ states of CO have been calculated using complete active space self-consistent field and multi-reference configuration interaction methods. The calculations have been performed at 108 nuclear separations from 0.7 to 4.0 A by the aug-cc-PV5Z basis set. Spectroscopic constants for the six low-lying electronic states are found in good agreement with experimental data. The vibrational states of the X1Σ+ and A1Π states are also calculated, which are reliable and accurate by comparison with the experimental data and the other theoretical values. The transition dipole moment (TDM) shows that the TDM of the two states (X1Σ + A1Π) are reduced strongly with increase of bond length.     

Electronic Structure and Optical Properties of Zinc-Blende InxGa1-xNyAs1-y by a First-Principles Study

Electronic structure and optical properties of the zinc-blende In_xGa_{1 - x}N_yAs_1-y system are calculated from the first-principles. Some relative simulations are performed using CA-PZ form of local density approximation in the framework of density functional theory. The supercell of intrinsic GaAs is calculated and optimized by using different methods, and the LDA-CA-PZ gives the most stable structure. The band gap of In_xGa_{1 - x}As tends to decrease with the increasing In concentration. For the case of In_0.0625Ga_0.9375N_yAs_{1 -y}, the band gap will show slight difference when N concentration is larger than 18.75%. The optical transition of In dopant in GaAs exhibits a red shift, while it is a blue shift for the N dopant in InGaAs. Besides, dielectric function, reflectivity, refractive index and loss function in different doping model of In_xGa_{1 - x}N_yAs_{1 - y} are also discussed.     

Surface diffusion of Si,Ge and C adatoms on Si （001） substrate studied the molecular dynamics simulation

Depositions of Si, Ge and C atoms onto a preliminary Si (001) substrate at different temperatures are investigated by using the molecular dynamics method. The mechanism of atomic self-assembling occurring locally on the flat terraces between steps is suggested. Diffusion and arrangement patterns of adatoms at different temperatures are observed. At 900 K, the deposited atoms are more likely to form dimers in the perpendicular [110] direction due to the more favourable movement along the perpendicular [110] direction. C adatoms are more likely to break or reconstruct the dimers on the substrate surface and have larger diffusion distances than Ge and Si adatoms. Exchange between C adatoms and substrate atoms are obvious and the epitaxial thickness is small. Total potential energies of adatoms and substrate atoms involved in the simulation cell are computed. When a newly arrived adatom reaches the stable position, the potential energy of the system will decrease and the curves turns into a ladder-like shape. It is found that C adatoms can lead to more reduction of the system energy and the potential energy of the system will increase as temperature increases.