Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AIInGaN superlattice electron blocking layer

InGaN/AIlnGaN superlattice （SL） is designed as the electron blocking layer （EBL） of an InGaN/GaN-based light- emitting diode （LED）. The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concen- tration, radiative recombination rate, electron leakage, internal quantum efficiency （IQE）, current-voltage （l-V） perfor- mance curve, light output-current （L-l） characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AIInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts. Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AIlnGaN SL EBL is used.     

化学热力学中微积分的引入及其意义

从微积分在化学热力学理论中的应用角度出发,介绍微积分是如何被引入到化学热力学中。归纳了化学热力学状态函数的数学特性,讨论了一些重要基本概念的联系和区别,指出了微积分在化学热力学理论建立过程中的重要意义,并结合一些实例介绍了微积分原理和方法在化学热力学中的应用。     

水质砷自动分析仪比对实验方法的探讨

探讨了砷自动分析仪与原子荧光法测定的实验方法,用水样相对误差绝对值的平均值（A值）和t检验两种方法对比对结果进行了判断。找出了9项环境保护行业标准之外的自动分析仪,在实际工作中比较切实可行的比对实验的方法。     

关于一种开尔文方程推导方法的讨论

不同版次物理化学教材对开尔文方程推导的方法不同。本文通过对吉布斯界面热力学基本方程中球状液滴压强的分析,并依据对于弯曲液滴,附加压力本质上就是由弯曲液面表面张力引起的,得出某物理化学教材中,对小液滴的气液两相平衡过程,其吉布斯自由能的变化为零。对于恒温下,把处于外压为p0的平面液滴分割为处于外压为p_r的小液滴的过程,其吉布斯自由能的变化为2σM/ρr。     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers

GaN/InGaN superlattice barriers are used in InGaN-based light-emitting diodes （LEDs）. The electrostatic field in the quantum wells, electron hole wavefunction overlap, carrier concentration, spontaneous emission spectrum, light-current performance curve, and internal quantum efficiency are numerically investigated using the APSYS simulation software. It is found that the structure with GaN/InGaN superlattice barriers shows improved light output power, and lower current leakage and efficiency droop. According to our numerical simulation and analysis, these improvements in the electrical and optical characteristics are mainly attributed to the alleviation of the electrostatic field in the active region.     

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

InGaN/AlInGaN superlattice(SL) is designed as the electron blocking layer(EBL) of an InGaN/GaN-based lightemitting diode(LED). The energy band structure, polarization field at the last-GaN-barrier/EBL interface, carrier concentration, radiative recombination rate, electron leakage, internal quantum efficiency(IQE), current–voltage(I–V) performance curve, light output–current(L–I) characteristic, and spontaneous emission spectrum are systematically numerically investigated using APSYS simulation software. It is found that the fabricated LED with InGaN/AlInGaN SL EBL exhibits higher light output power, low forward voltage, and low current leakage compared with those of its counterparts.Meanwhile, the efficiency droop can be effectively mitigated. These improvements are mainly attributed to the higher hole injection efficiency and better electron confinement when InGaN/AlInGaN SL EBL is used.