带用横向射流的三维超声速湍流流场分析

应用显式的五阶WENO格式，结合k-ω湍流模型，求解三维Favre平均N－S方程，计算了从方孔横向喷出的声速气流与马赫数为3．0的超声速气流的干扰流场。结果表明，在射流上游，射流的阻碍便超声速气流产生分离，形成两个主要的回流区域，主回流导致在方孔射流两侧形成马蹄涡区域，射流下游存在低压区域，形成较小的回流以及一对螺流形旋涡。     

开展数学实验课程教学促进大学数学教学改革

本主要阐述了开设数学实验课程教学对促进数学教改所起的作用，探索了数学实验课程的教学内容、教学方法、教学手段以及考试改革等。全面总结了重庆大学近年来开展数学实验课程教学及深化理工科数学教学改革的一些思路。     

A Facile Synthesis of α-Phenylthio-α,β-Unsatuated Esters

α-phenylthio-α，β-unsaturated esters 6 were synthesized by Witting reaction of 3.which were prepared by a phenylsulfenyllation-trans-ylidation reaction.     

HLS直线加速器调制器系统设计与改造

介绍了合肥同步辐射光源速调管调制器改造项目.在新的设计中采用了开关型恒流PFN充电电源,计算了充电参数,建立了主放电回路的仿真模型,重点分析了电路中反向电压问题,依据仿真结果及分析设计了反向保护电路.给出了运行中的主要波形.最后介绍了新的调制器控制系统.     

Studies on Synthesis and properties of Mg-Al-nitrate Layered Ouble Hydroxides

A positive Mg-Al-nitrate layered double hydroxides(LDHs) has been synthesized using a non-steady coprecipitation method.The shape.size,chemical composition,electrical property and anion exchange property of the positve nanoparticle were studied by SEM,XRD,FTIR,chemical analysis,spectroanalysis and meaxsuring of electrophoretic mobilities.Preliminary results show the positive nanoparticle is a promising precursor of polymer/LDHs nanocomposite.     

在几何和参数上表示同一条曲线的两条有理NURBS曲线的权与控制顶点之间的关系

The paper discusses the relationship between weights and control vertices of two rational NURBS curves of degree two or three with all weights larger than zero when they represent the same curve parametrically and geometrically, and gives sufficient and necessary conditions for coincidence of two rational NURBS curves in non-degeneracy case.     

Birkhoff系统的Hojman定理的几何基础

研究了Birkhoff系统的Hojman定理的几何基础.建立了系统的运动微分方程和Hojman守恒 定理，利用现代微分几何给出了Birkhoff系统的Hojman定理的一个证明. 关键词： Birkhoff系统 Hojman定理 对称性 微分几何     

Ablation of GaN Using a Femtosecond Laser

We study the pulsed laser ablation of wurtzite gallium nitride(GaN) films grown on sapphire,using the femtosecond laser beam at a central wavelength of 800nm as the source for the high-speed ablation of GaN films.By measuring the backscattered Raman spectrum of ablated samples,the dependence of the ablation depth on laser fluence with one pulse was obtained.The threwshold laser fluence for the ablation of GaN films was determined to be about 0.25J/cm^2,Laser ablation depth increases with the increasing laser fluence until the amount of removed material is not further increased.The ablated surface was investigated by an optical surface interference profile meter.