Temperature dependent direct-bandgap light emission and optical gain of Ge

Band structure, electron distribution, direct-bandgap light emission, and optical gain of tensile strained, n-doped Ge at different temperatures were calculated. We found that the heating effects not only increase the electron occupancy rate in the Γ valley of Ge by thermal excitation, but also reduce the energy difference between its Γ valley and L valley. However,the light emission enhancement of Ge induced by the heating effects is weakened with increasing tensile strain and n-doping concentration. This phenomenon could be explained by that Ge is more similar to a direct bandgap material under tensile strain and n-doping. The heating effects also increase the optical gain of tensile strained, n-doped Ge at low temperature, but decrease it at high temperature. At high temperature, the hole and electron distributions become more flat, which prevent obtaining higher optical gain. Meanwhile, the heating effects also increase the free-carrier absorption. Therefore, to obtain a higher net maximum gain, the tensile strained, n-doped Ge films on Si should balance the gain increased by the heating effects and the optical loss induced by the free-carrier absorption.     

基于硅基光子器件的Fano共振研究进展

硅基光子技术的发展为新型微纳光学功能器件和片上系统提供了高可靠、高精度的实现手段.采用硅基光子技术构建的具有连续(准连续)模式微腔与离散模式的微腔耦合产生的Fano共振现象得到了广泛关注.Fano共振光谱在共振波长附近具有不对称且尖锐的谐振峰,传输光的强度在共振波长附近从0突变为1,该机制可显著提高硅基光开关、探测器、传感器,以及光非互易性全光信号处理的性能.本综述分析了Fano共振的一般数学表述,总结了当前硅基光子微腔耦合产生Fano共振的理论模型研究现状,讨论了不同类型硅光器件实现Fano共振的方法,比较各种方案优劣及适用场合,梳理了Fano共振在全光信号处理方面的应用研究情况.最后探讨存在的一些问题及未来可能的相关研究方向.     

双烯化合物类单体合成支化聚合物的支化结构的研究

分别以二乙烯基苯(DVB)、双甲基丙烯酸二缩三乙二醇酯(tri-EGDMA)和1,6-双马来酰亚胺基正己烷(BMIH)为支化单体,采用原子转移自由基聚合合成支化聚苯乙烯;以先核后臂法合成的星状支化聚苯乙烯为参照对合成的支化聚合物的支化形态进行研究.采用气相色谱(GC)、核磁共振氢谱(1H-NMR)和三检测凝胶渗透色谱(TD-SEC)测定了苯乙烯的转化率,聚合物分子量及其分布,特性黏数和均方回转半径.实验结果表明3个支化聚合反应体系内悬垂双键是逐步消耗的,不存在明显的成核过程.反应前期,以形成带有悬垂双键的初级链和轻度支化聚合物为主,聚合物分子量随单体转化率逐步上升;反应后期,悬垂双键聚合导致的分子之间的偶合更加明显,使得聚合物分子量快速上升,合成得到的都是无规支化聚合物.