Integrated a-Si：B Microbolometer Arrays Based on Improved Porous Silicon Micromachining Techniques

A monolithic uncooled 8 × 8 microbolometer array with is presented. The a-Si：B film was deposited by plasma boron-doped a-Si （a-Si：B） thermistors as active elements enhanced chemical vapour deposition. To decrease the thermal conductance of the microbolometer, a-Si：B thermistor was formed on a four-leg suspended microbridge. The improved porous silicon micromachining techniques described here enable the integration of the sensor array with the metal oxide-semiconductor readout circuitry. The sacrificial material of porous silicon is prepared in the first step. It is then well protected all the time during the fabrication of metal-oxide-semiconductor field effect transistors and microbolometers before being released. Measurements and calculations show that the uncorrected uniformity of the 8 × 8 microbolometer array is about 4.5%, and the detectivity of 2.17 × 10^8 cm Hz^1/^2W^-1 is achieved at a chopping frequency of 30 Hz and a bias voltage of 5 V with a thermal response time of 12.4 ms.     

用于"芯片实验室"的静电机制微液滴控制芯片的研制

提出了一种结构简单、可编程控制的离散液滴控制芯片。它以硅为衬底,重掺杂多晶硅为微电极阵列,氧化硅为介质层,碳氟聚合物薄膜为疏水层。它克服了传统连续流传输、混合的局限性及层流条件的限制,通过控制施加在微电极阵列上的电压脉冲时序,成功实现了对离散液滴的快速传输和混合。在30 V驱动电压下,约0.9μL去离子水液滴传输速度可达24 mm/s;在40 V驱动电压下,约0.8μL去离子水液滴和约1.4μL的0.0001 mol/L Rhodam ine液滴在7/30 s内完成了快速混合。另外,还提出利用提高液滴速度及来回晃动混合后的液滴等几种加强混合方法。