Annealing effects on structural, optical and electrical properties of e-beam evaporated CuIn0.5Ga0.5Te2 thin films

CuIn_0.5Ga_0.5Te₂ (CIGT) thin films have been prepared by e-beam evaporation from a single crystal powder synthesized by direct reaction of constituent elements in a stoichiometric proportion. Post-depositional annealing has been carried out at 300 and 350 °C. The compositions of the films were determined by energy dispersive X-ray analysis (EDXA) and it was found that there was a remarkable fluctuation in atomic percentage of the constituent elements following to the post-depositional annealing. X-ray diffraction analysis (XRD) has shown that as-grown films were amorphous in nature and turned into polycrystalline structure following to the annealing at 300 °C. The main peaks of CuIn_0.5Ga_0.5Te₂ and some minor peaks belonged to a binary phase Cu₂Te appeared after annealing at 300 °C, whereas for the films annealed at 350 °C single phase of the CuIn_0.5Ga_0.5Te₂ chalcopyrite structure was observed with the preferred orientation along the (1 1 2) plane. The effect of annealing on and near surface regions has been studied using X-ray photoelectron spectroscopy (XPS). The results indicated that there was a considerable variation in surface composition following to the annealing process. The transmission and reflection measurements have been carried out in the wavelength range of 200-1100 nm. The absorption coefficients of the films were found to be in the order of 10⁴ cm⁻¹ and optical band gaps were determined as 1.39, 1.43 and 1.47 eV for as-grown and films annealed at 300 and 350 °C, respectively. The temperature dependent conductivity and photoconductivity measurements have been performed in the temperature range of −73 to 157 °C and the room temperature resistivities were found to be around 3.4 × 10⁷ and 9.6 × 10⁶ (Ω cm) for the as-grown and annealed films at 350 °C, respectively.     

Birefringence of CuGa2S4 crystals

The interference of optical transmission spectra of thin CuGaS₂ single crystals is measured in E||c and E⊥c polarizations. The spectral dependencies of the refractive indexes n_o, n_e and Δn = n_o − n_e near the absorption edge have been determined from interference spectra. The intersection of refractive indexes at two wavelengths has been revealed at 300 K and 10 K. The characteristics of Band-Pass-Mode Filter and Band-Elimination-Mode Filter have been measured, which possess 7 narrow absorption (transmission) bands and represent a comb filter. The characteristics of these filters have been studied.     

Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2(M=S,Se,Te) chalcopyrite semiconductors

We report an ab initio calculation and study of the structural and electronic properties of AgAlM₂(M=S,Se,Te) chalcopyrite semiconductors using the density functional theory (DFT)-based self-consistent tight-binding linear muffin tin orbital (TB-LMTO) method. The calculated equilibrium values of the lattice constants, anion displacement parameter (u), tetragonal distortion (η=c/2a) and bond lengths are in good agreement with experimental values. Our study suggests these semiconductors to be direct band gap semiconductors with band gaps 1.98 eV, 1.59 eV and 1.36 eV, respectively. These values are in good agreement with experimental values, within the limitation of the local density approximation (LDA). Our explicit study of the effects of anion displacement and p-d hybridization show that the band gap increases by 9.8%, 8.2% and 5.1%, respectively, for AgAlM₂(M=S,Se,Te) due to former effect and decreases by 51%, 47% and 42%, respectively, due to latter effect.     

Effects of annealing on structural and morphological properties of e-beam evaporated AgGaSe2 thin films

Polycrystalline AgGaSe₂ thin films were deposited by using single crystalline powder of AgGaSe₂ grown by vertical Bridgman-Stockbarger technique. Post-annealing effect on the structural and morphological properties of the deposited films were studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) with energy dispersive X-ray analysis (EDXA) measurements. XRD analysis showed that as-grown films were in amorphous structure, whereas annealing between 300 and 600 °C resulted in polycrystalline structure. At low annealing temperature, they were composed of Ag, Ga₂Se₃, GaSe, and AgGaSe₂ phases but with increasing annealing temperature AgGaSe₂ was becoming the dominant phase. In the as-grown form, the film surface had large agglomerations of Ag as determined by EDXA analysis and they disappeared because of the triggered segregation of constituent elements with increasing annealing temperature. Detail analyses of chemical composition and bonding nature of the films were carried out by XPS survey. The phases of AgO, Ag, Ag₂Se, AgGaSe₂, Ga, Ga₂O₃, Ga₂Se₃, Se and SeO₂ were identified at the surface (or near the surface) of AgGaSe₂ thin films depending on the annealing temperature, and considerable changes in the phases were observed.     

不同[Cu]/[In]比例的CuInS2薄膜的特性

采用连续离子层吸附与反应方法在玻璃基板上按照不同[Cu]/[In]的比例制备了CuInS₂薄膜,并在400 °C退火30 min. 对薄膜的晶体结构和晶粒尺寸用X射线衍射方法进行了表征,原子力显微镜测定薄膜的表面形貌. 研究不同的[Cu]/[In]比例对薄膜光学和电学性能的影响. 采用直流两探针法在300～470 °C测定CuInS₂薄膜的电阻率,随着[Cu]/[In]比例的增加,电阻率值越来越低. 溶液中[Cu]/[In]的比例明显影响CuInS₂薄膜的结构、电学和光学特性.     

Material and device properties of Cu(In,Ga)Se2 absorber films prepared by thermal reaction of InSe/Cu/GaSe alloys to elemental Se vapor

The aim of this work was to study the influence of selenization temperature on the morphological and structural properties of CuIn_1−xGa_xSe₂ (CIGS) polycrystalline thin films prepared by a two-step method. The compound and metallic precursors were deposited sequentially using GaSe, InSe and Cu sources by thermal evaporation. These identical InSe/Cu/GaSe precursors are then selenized with Se vapor in a vacuum system. All the CIGS films showed chalcopyrite structure and presence of secondary phases observed at low temperatures. High temperature treatment led to better crystalline and an increase in grain size. Solar cell devices are fabricated and J–V measurements performed under AM1.5 global solar spectra conditions at 25 °C are presented.     

Electrochemical impedance spectroscopy analysis of chalcopyrite CuFeS2 electrodes

A chalcopyrite CuFeS₂ electrode obtained from the “El Teniente” mine has been studied by Electrochemical Impedance Spectroscopy (EIS) in an alkaline solution for different oxidation potentials. The experimental results can be interpreted from a Randles equivalent circuit, V_dc<0.4 V vs. saturated calomel electrode (SCE), and a surface layer model for V_dc>0.4 V vs. SCE. From these results, the variation with the d.c. applied potentials of charge transfer electrical resistance of the redox reaction, the double layer capacitance and other characteristic parameters are considered.     

黄铜矿及其复合材料在电化学储能领域的研究进展

黄铜矿(CuFeS₂)是一种具有特殊金色光泽的天然矿物,具有四方结构,其中Fe、Cu离子与晶格中的硫形成四面体配位,相较于其他硫化物和其相对应的氧化物,CuFeS₂具有较高的电导率和优异的电化学性能,且拥有成本低廉、存在天然矿物且自然储量丰富、无毒等优势,使其具有应用于电化学储能体系电极材料的潜能。本文详细介绍了CuFeS₂的物理化学性质、几种简单的不同形貌的合成方法以及其作为电化学储能电极材料方面的研究,并对CuFeS₂材料未来的研究方向进行了展望。     

The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes

p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ type thin films were synthesized by thermal evaporation method on Mo coated glass substrates. To obtain Al/CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂/Mo Schottky diode structure for two compositions of x = 0.0 and 0.6, Al metal was evaporated on upper surface of CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ as a front contact. Al/p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂/Mo structures were annealed temperature range from 150 °C to 300 °C for 10 min under vacuum. The electrical and dielectrical properties of Al/p-CuIn_0.7Ga_0.3(Se_(1?x)Te_x)₂ (CIGSeTe) Schottky barrier diodes (SBD) have been investigated. Capacitance–Voltage (C–V) characteristics, Conductance–Voltage (G/w–V) characteristics and interface state density were studied in order to obtain electrical and dielectrical parameters. The effects of interface state density (N_ss), series resistance (R_s), the dielectric constant (?′), dielectric loss (?″), dielectric loss tangent (tan δ), ac electrical conductivity (σ_ac) and carrier doping densities were calculated from the C–V and G/w–V measurements and plotted as a function of annealing temperature. It was observed that the values of carrier doping density N_A for annealing temperature at 150 °C decreased from 2.83 × 10⁺¹⁵ cm^?3 to 2.87 × 10⁺¹⁴ cm^?3 with increasing Te content from x = 0.0 to 0.6. The series resistance for x = 0.0 found to be between 10 and 75 Ω and between 50 and 230 Ω for x = 0.6 in the range of annealing temperature at 150–300 °C.     

Effects of Mn substitution on the structure and properties of chalcopyrite-type CuInSe2

Mn-doped CuInSe₂ compounds (CuIn_1−xMn_xSe₂, x=0.0125–0.20 and Cu_1−yIn_1−yMn_2ySe₂, 2y=0.0125–0.60) were synthesized by high-temperature solid-state reactions. Single phase materials with chalcopyrite structure persist up to 0.10 and 0.20 doping for CuIn_1−xMn_xSe₂ and Cu_1−yIn_1−yMn_2ySe₂, respectively. The chalcopyrite and sphalerite phases co-exist in the Cu_1−yIn_1−yMn_2ySe₂ system for 2y=0.25–0.50. Attempts to introduce greater manganese content, x=0.15–0.20 for CuIn_1−xMn_xSe₂ and 2y=0.60 for Cu_1−yIn_1−yMn_2ySe₂, result in partial phase segregation. For the single-phase samples, the lattice parameters of both systems increase linearly with manganese concentration and thus follow Vegard's law. The temperature of the chalcopyrite–sphalerite phase transition is decreased by manganese substitution for all single-phase samples. The bandgap of the materials remains around 0.9 eV. Additionally, the Mn-doped CuInSe₂ compounds display paramagnetic behavior, whereas pure CuInSe₂ is diamagnetic at 5–300 K. All the CuIn_1−xMn_xSe₂ and Cu_1−yIn_1−yMn_2ySe₂ compounds with chalcopyrite structure show antiferromagnetic coupling and measured effective magnetic moments up to 5.8 μ_B/Mn.