基于DSP的高功率TEACO2激光器控制系统的高精度数据采集

针对基于DSP的高功率TEA CO2激光器控制系统直接利用DSP F2812内置A/D转换器（ADC）进行模拟量采样时存在转换误差较大,且模拟量易受电磁干扰等问题,从硬件和软件两个角度提出了校正DSP2812内置ADC的方法。硬件上采用硬件模拟滤波和隔离等手段对输入的模拟量进行处理;软件校正则通过将两路给定的参考电压值送入DSPF2812内置A/D转换器的两个转换通道,计算出ADC的偏置误差和增益误差,以此误差对其它通道A/D转换器进行校正。最后,实验分析了参考电压和A/D采样时钟频率对A/D转换精度的影响。结果表明,提出的方法能有效地提高A/D转换器的精度,A/D转换误差达到±3 LSB,特别是在对腔压值精度要求很高的0～12 000 Pa区段,A/D转换精度达±1 LSB,可以保证TEA CO2激光器的可靠运行。     

基于GaSe和GaSe0.7S0.3单晶的单脉冲CO2激光倍频器

描述了使用电感储能发生器和半导体转换开关泵浦的工作波长为10.6μm的高效CO2激光器。给出了激光泵浦的非线性晶体GaSe和GaSe0.7S0.3的二次谐波振荡的实验数据和理论估算结果。结果显示,GaSe晶体在输入能量为180mJ时,最大能量转换效率为0.38%,倍频激光的峰值功率为8 kW。     

非链式脉冲DF激光器的关键技术（英文）

基于化学反应的非链式脉冲DF激光器是产生3.5～4.1μm波段的有效相干辐射光源,具有存储能量水平高等优点。这些优点使得该激光器倍受中红外领域激光研究者的重视。为了更好地提高非链式脉冲DF激光器的输出性能,研制高能量水平的DF激光器,本文详细介绍了自引发大体积放电技术、混合气体配比技术、循环冷却技术等DF激光器关键技术,重点介绍了自引发大体积放电技术。这几种技术将为研制高性能DF激光器提供理论指导。     

多光束激光远场干涉实验研究

设计了多组多孔径光阑,将激光扩束后通过自制的多孔径光阑,获得多光束相干激光光源.基于多光束干涉理论,通过改变不同的光阑,得到多组点状阵列分布的远场干涉图样,结果表明远场中心主瓣具有随着占空比减小能量降低、旁瓣增多的分布规律.实验结果表明,相干源呈正三角形分布时能量集中度较好.对高功率激光相干合成具有一定的参考意义.     

舰船光电对抗中烟幕遮蔽与激光引偏的配合作战研究

通过分析舰船光电对抗作战中烟幕干扰和激光引偏干扰的特点,提出了烟幕遮蔽和激光引偏在对抗半自主激光制导武器时配合使用的作战样式,分析了各种作战样式的使用条件、工作流程和配合要素,以及作战样式的优势与不足,指出了多种干扰手段配合作战是发挥光电对抗系统综合对抗效能的关键.     

激光制备类金刚石膜技术研究

现有技术制备的类金刚石(DLC)膜由于含氢、硬度低、内应力大、附着力差等特点,严重限制了其光学工程应用.激光法是近年发展的一种制备DLC膜的新方法,相比其他制备方法具有诸多优点.综合分析了激光制备DLC膜过程中,激光波长、脉宽、功率密度、衬底温度和偏压等因素对薄膜质量的影响规律.采用氧气氛辅助沉积、元素掺杂和双波长激光...     

活塞激光热负荷应力场数值模拟

活塞激光热负荷就是通过光学转光片改变激光在空间的能量分配比例.结合活塞激光热负荷试验工况,建立了活塞激光热负荷应力场模拟数学物理模型,模型中考虑了材料的热物性参数随温度的变化.结果表明:由于活塞顶凹坑位置靠近通油孔,导致其应力波动幅值比激光辐照区域大;活塞凹坑、通油孔和靠近活塞顶面的活塞内腔由于和冷却介质直接接触,是活...     

Output mode characteristics of an in-phase locked gain waveguide array CO2 laser

In this paper,experimental and theoretical studies of the output mode characteristics of an in-phase locked gain waveguide array CO 2 laser are reported.The experimental results of the optical oscillation mode frequency,the far-field intensity distribution and the burnt pattern of the sliced waveguide array laser are obtained.A revised mode expression of the rectangle waveguide,which is suited for this waveguide array CO 2 laser,is proposed.The theoretical simulation results based on the revised mode expression are shown to be in good agreement with the experimental results.     

Composition dependence of unipolar resistance switching in TaOx thin films

Amorphous TaO_x thin films were deposited at different temperatures, and the resistance switching properties of the Pt/TaO_x/Pt structure were investigated. X‐ray photoelectron spectroscopy showed that the amount of Ta₂O₅ in the film decreased and the content of Ta suboxides increased substantially when the growth temperature was increased. Unipolar resistance switching near the anode was stable only for TaO_x film grown at room temperature. The experimental results revealed the critical effect of the film composition on the resistance switching behavior of TaO_x films. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of thermal annealing on the formation of silicon nanoclusters in SiOX films grown by PLD

Silicon nanoclusters formation in pulsed laser deposited (PLD) silicon suboxide (SiO_X) films by thermal annealing is reported. The SiO_X films are prepared by ablation of silicon target at different oxygen partial pressures. The different deposition conditions are employed to study the effect of oxygen concentration on the size of the nanoclusters. Post deposition thermal annealing of the films leads to the phase separation in silicon suboxide films. Fourier transform infrared spectroscopy, micro-Raman spectroscopy and UV-vis absorption spectroscopy studies were carried out to characterize the formation of silicon nanoclusters in SiO_X films.