化学非平衡夸克-胶子物质中等质量双轻子的产生

研究了正在进行化学平衡的富重子夸克-胶子物质的双轻子产生，发现由于产生在RHIC能量 的化学非平衡的富重子夸克-胶子物质冷却慢和高的初始温度，导致中等质量双轻子产生重 大增强.因此，中等质量双轻子的增强可以是夸克-胶子物质形成的信号.同时，这个增强能 补偿由于初始夸克化学势增加引起的双轻子抑制，因而双轻子产额的抑制不再是夸克-胶子 物质产生的信号. 关键词： 化学非平衡夸克-胶子物质 热粲夸克 双轻子     

Determination of the rheological behavior of epoxy–amine thermosets by dynamic mechanical analysis: Isothermal methods versus nonisothermal methods

The reticulation process of an epoxy resin using an amine as a cure agent was studied at different temperatures and concentrations of the cure agent with dynamic mechanical thermal analysis. The study was performed under both isothermal and nonisothermal conditions, and a temperature–time–transformation diagram was obtained. The measurements from the two modes gave similar results, although the nonisothermal mode required fewer experiments. © 2003 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 41: 1965–1977, 2003     

热喷涂技术的现状和发展

介绍了热喷涂工艺的特点，喷涂方法的种类及其技术以及热喷涂技术的应用概况，并对热喷涂技术的发展方向给予了展望。     

Thermal analysis as a tool in the study of GMM in Angra Dos Reis region,Rio de Janeiro,Brazil

Angra dos Reis/Itaguai region of the state of Rio de Janeiro, Brazil, is a very problematic area due to the instability of slope and landslides, due to geological and geomorphological conditions and to the significant and continuous human occupation over favorable areas is prone to the triggering of landslides. The samples were analyzed by thermogravimetry (TG), derivative thermogravimetry (DTG) and differential thermal analysis (DTA). This paper analyzes and characterizes the clay minerals and presence of water, gravitational mass movements’ sites and compares it with sites where gravitational mass movements do not occur. Indeed, this analysis also attempts to verify the presence of minerals.     

Morphology and spectral properties of thin films of benzoxazole derivatives of biphenyl

We have studied the spectral properties and morphology of thin films (TVD films) formed by thermal vacuum deposition of 4,4′-bis[(E)-1-(1,3-benzoxazol-2-yl)-2-ethenyl]-1,1′-biphenyl and its substituted derivatives. We have shown that introducing bulky 2,2′-oxyhexyl substituents into the biphenyl units leads to a shift of the fluorescence maximum for the TVD films toward shorter wavelengths, a decrease in their photostability, and aggregation of the films during storage. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 3, pp. 300–303, May–June, 2007.     

AGS能量下π~－π~－的Bose—Einstein关联

全同粒子间的玻色－爱因斯坦关联可以用来研究相对论性核碰撞中次级粒子源分布及有关的物理问题．本文用强子级联模型（ＨＣＭ）模拟２８Ｓｉ（１４．６ＡＧＣＶ／ｃ）＋Ａｕ反应，得到π－粒子的ｆｒｅｅｚｅ－ｏｕｔ状态，进而计算了π－π－关联函数，取得与实验一致的结果．还计算了ｆｒｅｅｚｅ—ｏｕｔπ－源的均方根线度，并讨论了它与拟合方法抽取的源参数间的关系．     

Thermal Analysis in Examination of Reduction of Blast Furnace Pellets

This paper presents applications of thermal analysis to observe the course of reduction of acidic pellets, metallurgical substances whose reducibility and strength are basic parameters of use in blast furnace processes. Both parameters depend on the mineral composition of the samples. The investigations included determination of the chemical and phase compositions of the initial samples and reduction products. Research was conducted on acidic pellets from Połtawa (Poland), applied in the T. Sendzimir Steelworks (Poland), in comparison with pellets from Brazil, Canada and Lebedyn (Russia). This revised version was published online in August 2006 with corrections to the Cover Date.     

Structural and electrical properties of crystalline (1−x)Ta2O5−xTiO2 thin films fabricated by metalorganic decomposition

Polycrystalline (1−x)Ta₂O₅−xTiO₂ thin films were formed on Si by metalorganic decomposition (MOD) and annealed at various temperatures. As-deposited films were in the amorphous state and were completely transformed to crystalline after annealing above 600 °C. During crystallization, a thin interfacial SiO₂ layer was formed at the (1−x)Ta₂O₅−xTiO₂/Si interface. Thin films with 0.92Ta₂O₅–0.08TiO₂ composition exhibited superior insulating properties. The measured dielectric constant and dissipation factor at 1 MHz were 9 and 0.015, respectively, for films annealed at 900 °C. The interface trap density was 2.5×10¹¹ cm⁻² eV⁻¹, and flatband voltage was −0.38 V. A charge storage density of 22.8 fC/μm² was obtained at an applied electric field of 3 MV/cm. The leakage current density was lower than 4×10⁻⁹ A/cm² up to an applied electric field of 6 MV/cm.