Physics-based simultaneous retrieval of atmospheric temperature-humidity profiles and land surface temperature-emissivity by integrating Terra/Aqua MODIS measurements

Atmospheric temperature-humidity profiles and land or sea surface temperature are coupled actions in the earth system process. Based on the numerical perturbation form of the atmospheric radiative transfer equation, a physics-based algorithm is pre- sented to integrate four pairs of MODIS measurements from the Terra and Aqua satellites to retrieve simultaneously atmospheric temperature-humidity profile, land-surface temperature and emissivity. Three pairs of MODIS data at two field sites in China, Luancheng...     

活塞激光热负荷应力场数值模拟

活塞激光热负荷就是通过光学转光片改变激光在空间的能量分配比例.结合活塞激光热负荷试验工况,建立了活塞激光热负荷应力场模拟数学物理模型,模型中考虑了材料的热物性参数随温度的变化.结果表明:由于活塞顶凹坑位置靠近通油孔,导致其应力波动幅值比激光辐照区域大;活塞凹坑、通油孔和靠近活塞顶面的活塞内腔由于和冷却介质直接接触,是活...     

发光温敏漆的制备及其温度猝灭特性研究

以三氯化钌、2—2联吡啶为主要原料,甲基丙烯酸甲酯为基质,制备了钌联吡啶／聚甲基丙烯酸甲酯发光温敏漆,并对其温度猝灭特性进行了研究。扫描电镜观察发现钌联吡啶为规则的层状六边形结构;差热-热重测试表明钌联吡啶在320℃发生分解。紫外吸收光谱分析发现,温敏漆的适合激发光波长区间为410～500nm。荧光光谱测试结果表明温敏...     

Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature

This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.     

Crystallization kinetics, glass transition kinetics, and thermal stability of Se70−xGa30Inx (x=5, 10, 15, and 20) semiconducting glasses

Crystallization and glass transition kinetics of Se_70−xGa₃₀In_x (x=5, 10, 15, and 20) semiconducting chalcogenide glasses were studied under non-isothermal condition using a Differential Scanning Calorimeter (DSC). DSC thermograms of the samples were recorded at four different heating rates 5, 10, 15, and 20 K/min. The variation of the glass transition temperature (T_g) with the heating rate (β) was used to calculate the glass transition activation energy (E_t) using two different models. Meanwhile, the variation of the peak temperature of crystallization (T_p) with β was utilized to deduce the crystallization activation energy (E_c) using Kissinger, Augis-Bennet, and Takhor models. Results reveal that E_t decreases with increasing In content, while both T_g and E_c exhibit the opposite behavior, and the crystal growth occurs in one dimension. The variation of these thermal parameters with the average coordination number <Z> was also discussed, and the results were interpreted in terms of the type of bonding that In makes with Se. Assessment of thermal stability and glass forming ability (GFA) was carried out on the basis of some quantitative criteria and the results indicate that thermal stability is enhanced while the crystallization rate is reduced with the addition of In to Se-Ga glass.     

Phase transition behavior and piezoelectric properties of low-Li and high-Sb modified KNN based piezoceramics

(Na_0.5K_0.5)_0.975Li_0.025Nb_0.82−xSb_xTa_0.18O₃ lead-free piezoceramics were prepared by the conventional solid-state sintering method. All samples possess a pure perovskite phase, and no secondary phase could be certified. The crystal structure changes from tetragonal to pseudo-cubic with increasing amount of Sb. The ferroelectric Curie temperature (T_c) shifts to lower temperature while the tetragonal to orthorhombic phase transition temperature (T_o-t) shows no obvious change with increasing Sb⁵⁺. Enhanced piezoelectric and electromechanical properties are obtained with x=0.06: d₃₃=352 pC/N, k_p=47% and k_t=38%, showing that they could be promising candidates as lead-free piezoelectric materials.     

Effect of preheating temperatures on microstructure and optical properties of Na-doped ZnO thin films by sol–gel process

The chemical composition, crystalline structure, surface morphology and photoluminescence spectra of Na-doped ZnO thin films with different heat treatment process were investigated by X-ray photoelectron spectroscopy, X-ray diffraction, atomic force microscopy and a fluorescence spectrometer. The results show that preferred orientation, residual stress, average crystal size and surface morphology of the thin films are strongly determined by the preheating temperature. The effects of preheating temperature on microstructure and surface morphology have been discussed in detail. The photoluminescence spectra show that there are strong violet & UV emission, blue emission and green emission bands. The violet & UV emission is ascribed to the electron transition from the localized level below the conduction band to the valence band. The blue emission is attributed to the electron transition from the shallow donor level of oxygen vacancies to the valence band, and the electron transition from the shallow donor level of interstitial zinc to the valence band. The green emission is assigned to the electron transition from the level of ionized oxygen vacancies to the valence band.     

One-step solution synthesis of Fe2O3 nanoparticles at low temperature

A new synthesis method of α-Fe₂O₃ nanoparticles was developed, in which the ferrous and ferric salts as well as polyaniline acted as the precursor and dispersant, respectively. From the investigation of X-ray diffraction and FT-IR spectra, the α-Fe₂O₃ nanoparticles can be directly prepared by the co-precipitation method without high-temperature calcining. Transmission electron microscope (TEM) and scanning electron microscope (SEM) observation revealed that the α-Fe₂O₃ nanoparticles had average diameters ranging from 30.0 to 75.0 nm. Compared with previous methods, this present method shows an easy processing and can be applied on the large-scale produce of α-Fe₂O₃ nanoparticles in one step.     

Nearly frictionless transport of electrons in CuxBi2Se3

We study the electric-field-driven transport of electrons in superconductors (Cu_xBi₂Se₃) by using the borrowed approach which has been successfully adopted to study the critical transport of other superconductors as well as supersolid helium in very low temperature environment. The critical temperatures related to the nearly frictionless transport of electrons were found to be directly relevant to the superconducting temperature of superconductors (Cu_xBi₂Se₃) after selecting specific activation energies.     

Influence of deposition temperature on the crystallinity of Al-doped ZnO thin films at glass substrates prepared by RF magnetron sputtering method

Al-doped ZnO (AZO) transparent conducting films were successfully prepared on glass substrates by RF magnetron sputtering method under different substrate temperatures. The microstructural, electrical and optical properties of AZO films were investigated in a wide temperature range from room temperature up to 350 °C by X-ray Diffraction (XRD), Field-Emission Scanning Electron Microscopy (FESEM), High-Resolution Transmission Electron Microscopy (HRTEM), Hall measurement, and UV–visible meter. The nature of AZO films is polycrystalline thin films with hexagonal wurtzite structure and a preferred orientation along c-axis. The crystallinity and surface morphologies of the films are strongly dependent on the growth temperature, which in turn exerts a great effect on microstructural, electrical and optical properties of the AZO films. The atomic arrangement of AZO film having an wurtzite structure was indeed identified by the HRTEM as well as the Selected Area Electron Diffraction (SAED). The defect density of AZO film was investigated by HRTEM. The film deposited at 100 °C exhibited the relatively well crystallinity and the lowest resistivity of 3.6 × 10⁻⁴ Ω cm. The average transmission of AZO films in the visible range is all over 85%. More importantly, the low-resistance and high-transmittance AZO film was also prepared at a low temperature of 100 °C.