首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   3383篇
  免费   1159篇
  国内免费   462篇
化学   2420篇
晶体学   254篇
力学   90篇
综合类   43篇
数学   7篇
物理学   2190篇
  2024年   8篇
  2023年   26篇
  2022年   71篇
  2021年   108篇
  2020年   111篇
  2019年   99篇
  2018年   87篇
  2017年   149篇
  2016年   216篇
  2015年   209篇
  2014年   268篇
  2013年   407篇
  2012年   321篇
  2011年   320篇
  2010年   236篇
  2009年   220篇
  2008年   215篇
  2007年   243篇
  2006年   223篇
  2005年   201篇
  2004年   172篇
  2003年   165篇
  2002年   175篇
  2001年   84篇
  2000年   79篇
  1999年   69篇
  1998年   98篇
  1997年   93篇
  1996年   69篇
  1995年   74篇
  1994年   42篇
  1993年   31篇
  1992年   17篇
  1991年   14篇
  1990年   20篇
  1989年   11篇
  1988年   14篇
  1987年   5篇
  1986年   5篇
  1985年   3篇
  1984年   4篇
  1983年   5篇
  1982年   8篇
  1981年   2篇
  1980年   2篇
  1979年   2篇
  1975年   1篇
  1974年   2篇
排序方式: 共有5004条查询结果,搜索用时 46 毫秒
981.
982.
The room temperature oxidation of porous silicon   总被引:1,自引:0,他引:1  
The room temperature oxidation of porous silicon was studied using isothermal methods. The oxidation was found to depend on the type of the porous silicon. The microcalorimetric signals from the oxidation of the p+- and n-type porous silicon in dry air were different. In humid air the signals from the oxidation could not be distinguished from the strong signal due to adsorption of water vapour, but when the samples were placed in water similar differences were observed. The reason for differences in reactions is discussed. The oxidation in different liquids was also studied. The signal from reactions in methanol and ethanol were found to be 100 times higher than in water. In FTIR studies the reaction gas produced by reactions between alcohols and the porous silicon, silane (SiH4) was found in the gas. Traces of SiOCH3 and SiOC2H5 groups were also found in FTIR spectra indicating Si---O---CxHy passivation of the surface.  相似文献   
983.
纪爱玲  马利波  刘澂  王永谦 《物理学报》2004,53(11):3818-3822
用等离子体增强化学气相沉积法在低温(低于50℃)衬底上沉积Si-SiOx和Si-SiNx复合薄膜,可得到平均颗粒尺寸小至3nm的高密度(最高可达4.0×1012cm-2)纳米硅复合薄膜.500℃快速退火后,这种复 合薄膜显现出优异的可见光全波段光致发光特性.通过比较相同条件下所制备的纳米Si-SiOx和Si-SiNx复合薄膜的光致发光效率,发现纳米Si-SiNx具有更为优异 的光致发光效率,这一点在可见光短波区表现得尤为显著. 关键词: 等离子体增强化学气相沉积 冷衬底 硅纳米颗粒 光致发光  相似文献   
984.
Highly stable monolayers of 2,9,16,23-tetracarboxyl phthalocyanine on 3-aminopropyl-triethoxysilane (ATS) modified silicon and quartz substrates were prepared by reaction of carboxyl and amine. The monolayers were characterized by UV-Vis spectra and AFM measurements. The results indicated that the ultra-thin films on silicon or quartz were smooth, and the ordered structures were observed in these films.  相似文献   
985.
The spontaneous emission of a material can be controlled by placing it in a micron-sized optical cavity. In this paper we introduce the subject and we discuss the realization, the physics and perspective applications of all porous silicon microcavities. The emission properties of the cavities have been characterized as a function of the temperature, of the excitation power and of the response time. Coupled microcavities are demonstrated. Modeling of the structure have been performed on the basis of a transfer matrix approximation.  相似文献   
986.
On the morphology of stain-etched porous silicon films   总被引:1,自引:0,他引:1  
Morphology of stain-etched porous silicon films was investigated by a non-destructive technique, based on reflectance spectrometry: dielectric function profiles were computed by spectral reflectance via a finite difference model, and porosity was deduced by the effective medium approximation. Theoretical calculations were supported by high-resolution electron microscopy observations. The relations among oxidising species concentration in the etching solution, porosity profile and surface reflectance of the films were investigated.  相似文献   
987.
988.
高炉冶炼过程的混沌性解析   总被引:5,自引:0,他引:5       下载免费PDF全文
郜传厚  周志敏  邵之江 《物理学报》2005,54(4):1490-1494
根据Grassberger和Procaccia提出的Kolmogorov熵计算方法,以山东莱芜钢铁集团公司1号 高炉和山西临汾钢铁集团公司6号高炉测得的铁水硅含量时间序列为样本,计算了各自的Kol mogorov熵分别为(01453±00151)nats·h-1-1和(01553±0014 0)nats·h-1-1,并估计了两座高炉铁水硅含量可预测的时间尺度分别约为6 88和644h.由Kolmogorov熵均为大于零的有限值,定量地说明了这两座高炉 关键词: 混沌 Kolmogorov熵 高炉冶炼过程 铁水硅含量  相似文献   
989.
光学声子色散关系对多孔硅喇曼谱的影响   总被引:2,自引:0,他引:2  
王晓平  赵特秀 《发光学报》1995,16(2):113-118
测量了多孔硅的喇曼光谱,观察到谱峰有明显的红移和非对称性展宽效应。用微晶模型对此现象进行了解释:认为谱峰的这种变化不完全是由尺寸的空间限制效应和多孔硅的应变造成的,更主要的是多孔硅的色散关系发生了变化。采用不同的色散关系对谱峰进行了拟合,发现色散关系对喇曼谱的拟合有较大的影响。  相似文献   
990.
Infrared soft laser desorption/ionization was performed using a 2.94 µm Er : YAG laser and a commercial reflectron time-of-flight mass spectrometer. The instrument was modified so that a 337 nm nitrogen laser could be used concurrently with the IR laser to interrogate samples. Matrix-assisted laser desorption/ionization (MALDI), laser desorption/ionization and desorption/ionization on silicon with UV and IR lasers were compared. Various target materials were tested for IR soft desorption ionization, including stainless steel, aluminum, copper, silicon, porous silicon and polyethylene. Silicon surfaces gave the best performance in terms of signal level and low-mass interference. The internal energy resultant of the desorption/ionization was assessed using the easily fragmented vitamin B12 molecule. IR ionization produced more analyte fragmentation than UV-MALDI analysis. Fragmentation from matrix-free IR desorption from silicon was comparable to that from IR-MALDI. The results are interpreted as soft laser desorption and ionization resulting from the absorption of the IR laser energy by the analyte and associated solvent molecules. Copyright © 2004 John Wiley & Sons, Ltd.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号