一种新的$1/f$过程小波模型

给出了一种新的二进小波1/f过程模型,从理论上证明了一类谱指数为H的近似1/f过程可通过一簇平稳随机过程产生.由于所提方法利用了1/f过程小波系数的相关性,因而有效地减少了合成1/f过程的谱误差.数值实验结果表明,新模型很好地改进了已有模型.     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

丹聂耳电池电动势产生的机理

 1836年,英国化学家丹聂耳(Daniell)发明了一种原理上最简单的化学电池,通常称之为丹聂耳电池。电动势是化学电池的一个重要的性能参数。而电动势等于单位正电荷由负极通过电池内部移到正极时电池内非静电力(化学力)所做的功。它取决于电极材料的化学性质,与电池的大小无关。因此,本文就从物理化学角度来探讨丹聂耳电池电动势产生的机理。丹聂耳电池的结构如图1所示。电池的两个电极锌板和铜板分别浸在ZnSO₄溶液和CuSO₄溶液中。     

J/ψ衰变到重子、反重子对中SU(3)对称性破坏的研究

利用粒子数据手册(PDG2004)公布的J/ψ衰变到重子、反重子对(BB)各个衰变道分支比的平均值, 对重子八重态的SU(3)对称性重新做了分析. 研究了J/ψ→BB中电磁相互作用和强相互作用的干涉. 得到了在J/ψ→BB中SU(3)单态、电磁 相互作用和SU(3)破坏各个因素所占的大小.     

Synthesis of GaN Nanorods by Ammoniating Ga2O3/ZnO Films

Large quantities of CaN nanorods are successfully synthesized on Si（111） substrates by ammoniating the films of Ga2O3/ZnO at 950℃ in a quartz tube. The structure, morphology and optical properties of the as-prepared CaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the CaN nanorods have a hexagonal wurtzite structure with lengths of several micrometres and diameters from 80 nm to 300hm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

Horizontal Connection and Horizontal Mean Curvature in Carnot Groups

In this paper we give a geometric interpretation of the notion of the horizontal mean curvature which is introduced by Danielli Garofalo-Nhieu and Pauls who recently introduced sub- Riemannian minimal surfaces in Carnot groups. This will be done by introducing a natural nonholonomic connection which is the restriction （projection） of the natural Riemannian connection on the horizontal bundle. For this nonholonomic connection and （intrinsic） regular hypersurfaces we introduce the notions of the horizontal second fundamental form and the horizontal shape operator. It turns out that the horizontal mean curvature is the trace of the horizontal shape operator.     

单级A/O程序HSMBR系统性能和亚硝酸型SND

采用单级A/O程序复合膜生物反应器(HSMBR)处理高氨氮废水,研究了在低DO浓度下系统对有机物、氨氮和总氮的去除效率.研究结果表明:在低DO浓度下,COD,氨氮的平均去除率分别为94.4%和92.8%.由于进水COD/TN比仅为2.01,则使得总氮平均去除率仅为69.4%,但是当系统亚硝化累积率从60.5%～67.1%提高到83.5%～86.4%时,系统总氮去除率提高了17.7%.另外,DO在0.5～1.0 mg·L-1时,TN去除率为69.4%,亚硝酸盐氮累积率在60.5%～89.5%之间,可见维持低DO浓度可以实现亚硝酸型同时硝化反硝化.