Surface effects in field-induced smectic transitions

We study the surface behavior of a semi-infinite smectogenic sample bounded by a solid wall, in the presence of an external electric field. Our analysis is performed in the framework of a Landau-de Gennes theory. For the sake of simplicity, we consider only the case in which, in the absence of field and surfaces, a direct isotropic to smectic-A transition occurs, while in the presence of the electric field a nonspontaneous nematic phase appears. Two new surface phases are identified, namely a parasmectic and a surface-induced smectic phase. The shifts in the transition temperatures and the critical behavior of the surface states are analyzed. Received: 25 August 1997 / Accepted: 23 January 1998     

氩等离子体物态方程的TF简化模型

对于高温高压下氩等离子体的电离度和物态方程,本文给出了一种基于Thomas-Feimi(TF)统计模型的简化计算新方法:首先将TF模型电离势的数值结果进行函数逼近,给出一个便于数值求解的计算电离度的近似计算方法,并由此计算了局部热动平衡下的氩等离子体在10～1000 eV高温范围内的物态方程.计算结果与国外报道的其他几种理论模型的计算结果均符合很好,与实验值也吻合较好.本文所提出的简单模型也适用于计算混合物物态方程,可以在电磁发射技术领域中的强电离等离子体中有更为广阔的应用前景.     

Preparation of entangled simultaneous nonresonant atomic states through atom-field interaction

A scheme is proposed for generating a three-atom maximal entanglement W state. It is based on the simultaneous nonresonant interaction of atoms with a single-mode cavity field. Our scheme is insensitive to the cavity field, so the cavity field in our scheme can be initially in thermal states.     

STS investigations of temperature dependence of Au(1 1 1) surface state energy position

High temperature scanning tunneling spectroscopy (HT-STS) was used to investigate the electronic structure of Au(1 1 1) at different temperatures in the energy range 0-1 eV below the Fermi level. We concentrated on the influence of temperature on the Shockley surface state (SS) appearing on noble metals surface due to a surface projected bulk bang gap in [1 1 1] direction. The influence of temperature on the projected band gap edge (BE) was also investigated. The experiment was carried out in the temperature range 294-580 K. As the result of the experiment a delicate shift of the SS and the BE in direction of the Fermi level was reported.     

The role of OH ions in the stabilization of F colour centres in LiF

Thermally Stimulated Depolarisation Current (TSDC) and optical methods are applied to a range of alkali-fluoride crystals in order to establish a model for the stable F ₂ ⁺ - like colour centres in LiF:OH^-. The experimental results for LiF:OH^- suggest that the OH^- defects are partially destroyed under ionising irradiation or during crystal growth. The low-temperature dielectric relaxation signals in LiF:OH^- and LiF:Mg²⁺,OH^- are attributed to highly interacting hydroxide ions and products of their destruction located in extended lattice defects. In LiF:OH^-, in contrast to other alkali halides, the results advocate for a defect-structure model, which considers a neutral defect (ND, probably O₂ or H₂) sited at the anion vacancy of the O^2--V _a ⁺ dipole and which possibly is the “nucleus” for the F ₂ ⁺ centre. The proposed F ₂ ⁺ (ND, O^-) model seems to better explain the dielectric results, compared to the older F ₂ ⁺ (O^2-) and F ₂ ⁺ (O^-) models. The estimate for the electric dipole moment derived from the experimental TSDC bands, gives a value for the F ₂ ⁺ - like centre in LiF:OH^- between those of the F ₂ ⁺ (O^-) and F ₂ ⁺ (O^2-) defects, in good agreement with the proposed F ₂ ⁺ (ND,O^-) model. The reduction of the activation energy barrier of the (re)orientation process of the Mg²⁺V _c ^- (OH^-) complexes in LiF:Mg²⁺,OH^-, and the low-temperature shift of their TSDC band, compared to the single Mg ₂ ⁺ V _c ^- peak in LiF:Mg²⁺, are tentatively ascribed to an increase in the crystal-lattice parameters owing to the presence of OH^- and/or products of its destruction. Received 31 August 2001 / Received in final form 30 March 2002 Published online 9 July 2002     

Electrical properties of polypyrrole/p‐InP structure

The polypyrrole/p‐InP structure has been fabricated by the electrochemical polymerization of the organic polypyrrole onto the p‐InP substrate. The current–voltage (I–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) characteristics of the PPy/p‐InP structure have been determined at room temperature. The structure showed nonideal I–V behavior with the ideality factor and the barrier height 1.48 and 0.69 eV respectively. C–f measurements of the structure have been carried out using the Schottky capacitance spectroscopy technique and it has been seen that there is a good agreement between the experimental and theoretical values. Also, it has been seen that capacitance almost show a plateau up to a certain value of frequency, after which, the capacitance decreases. The higher values of capacitance at low frequencies were attributed to the excess capacitance resulting from the interface states in equilibrium with the p‐InP that can follow the a.c. signal. The interface state density N_ss and relaxation time τ of the structure were determined from C–f characteristics. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 1572–1579, 2006     

Nd掺杂的Bi4Ti3O12变温X射线衍射分析

利用变温X射线衍射技术，在预烧过程中分析了Nd掺杂Bi4Ti3O12后生成Bi3.15Nd0.85Ti3O12（BNT）相的形成过程以及微结构的变化．实验观察到以30℃／min的升温速率，BNT相在700℃时开始形成，其衍射峰强度随温度的继续升高而增强，衍射峰半高宽随烧结时间延长而减小．X射线衍射分析结果表明，在900℃恒温条件下，烧结约2h，可形成单一的BNT相．     

电荷量子比特与量子化光场之间的纠缠

研究了初态为混合态的电荷量子比特与量子化光场之间的纠缠.通过求解系统的concurrence下限, 研究初态的混合度λ和失谐量Δ对系统纠缠随时间演化的影响. 在弱场中, 电荷量子比特初始是激发态的系统, 其纠缠度远远大于电荷量子比特初始是基态的系统, 并且Δ对系统的纠缠有明显的抑制作用. 在强场中, 电荷量子比特初始分别为激发态和基态时系统的纠缠演化接近一致, 初态混合度最高时系统的纠缠度最小, 并且Δ对系统纠缠的影响变弱. 关键词： 约瑟夫森结 纠缠 混合态 concurrence下限     

广义分布参数系统的状态反馈稳定性问题(1)

关于系统的状态反馈稳定性问题的研究一直是现代控制理论研究的重要问题之一.广义分布参数系统是比分布参数系统更广的一类系统,在研究复合材料热导体中的温度分布等问题时会出现这样的系统.本文讨论了H ilbert空间中一阶广义分布参数系统的状态反馈稳定性问题.应用泛函分析及线性算子半群理论的方法给出了使闭环广义分布参数系统渐进稳定的充要条件,充分条件及状态反馈的构造性表达式.这对研究广义分布参数系统的状态反馈稳定性问题具有重要的理论价值.     

Probabilistic Teleportation of an Arbitrary Unknown Two-Qubit State via Positive Operator-Valued Measure and Two Non-maximally Entangled States

We present a scheme for probabilistically teleporting an arbitrary unknown two-qubit state through a quantum channel made up of two nonidentical non-maximally entangled states. In this scheme, the probabilistic teleportation is realized by using a proper positive operator-valued measure instead of usual projective measurement.