银纳米微粒荧光猝灭法测定水中痕量ClO2

在pH 9.1的NH4Cl-NH3·H2O缓冲溶液中,银纳米微粒在470 nm处产生一个荧光峰;它能被ClO2氧化导致体系的荧光发生猝灭.ClO2浓度在0.001 1～0.185μg·mL-1范围内与荧光猝灭强度成良好的线性关系,检测限为0.004 7μg·mL-1 ClO2.据此建立了测定ClO2的荧光分析新方法,用于饮用水中ClO2的测定,结果满意.     

理论研究C8H80-（H2O）n（n=1～5）团簇

应用密度泛函B3LYP／6—31＋G（d，p）方法对C8H80-（H2O）n（n=1～5）团簇这种弱相互作用体系进行垒自由度能量梯度优化，得到该系列团簇的稳定蛄构．计算结果表明。在该系列二元团簇中，一方面水分子数目的多少对苯基丙酮分子的结构影响很小，另一方面由于苯基丙酮分子的存在，破坏了团簇中水分子的对称性结构，在团簇内部极力形成O—H—O这样弯曲的有方向性的氢键．对苯基丙酮-水这样结构复杂的团簇，指认光谱的难度非常大，本文只讨论了与C=O有关的振动峰和水分子的对称伸缩振动的最强峰．     

安装偏差对光纤布喇格光栅应变测量的影响

通过理论推导和试验分析研究了安装偏差对光纤应变测量的影响，得到安装误差所带来测量误差的计算公式.发现光纤的轴向与预定安装方向的角偏差越大，测量误差也越大.用光纤光栅进行应变测量时，必须考虑光纤的安装偏差，它直接关系到测量结果的准确性.实际测量中要尽量确保传感器安装方位的准确.     

显微动态图像分析技术及其在生物物理中的应用

介绍了一种可实时监测细胞生命活动的显微动态图像分析技术。该技术把显微光学成像技术、数字处理技术和动态图像分析技术结合为一体,可实现对活细胞的结构功能、生长过程和环境变化的影响等进行非侵入性连续监测。通过在细胞膜弹性模量测量中的应用表明,该技术不仅原理可靠,实现容易,应用方便,而且检测速度快,测量精度高,稳定性能好。此项技术可望在生物物理学的实验研究中获得广泛的应用。     

一类含参广义集值拟变分包含组的解的灵敏性分析

本文引入了一类新的含参广义集值拟变分包含组,应用隐预解算子技巧,建立了该类变分包含组与一类不动点问题的等价性,在适当的条件下,分析了含参广义集值拟变分包含组的解的灵敏性,所得结果推广改进了最新文献中的许多结果．     

NA序列部分和的矩完全收敛性

讨论了NA序列部分和的矩完全收敛性,在一定条件下获得了NA序列矩完全收敛的充要条件,显示了矩完全收敛和矩条件之间的关系,将独立同分布随机变量序列矩完全收敛的结果推广到NA序列,得到了与独立随机变量序列情形类似的结果.     

Challenging Students to View the Concept of Area in Triangles in a Broad Context: Exploiting the Features of Cabri-II

This study focuses on the constructions in terms of area and perimeter in equivalent triangles developed by students aged 12–15 years-old, using the tools provided by Cabri-Geometry II [Labore (1990). Cabri-Geometry (software), Université de Grenoble]. Twenty-five students participated in a learning experiment where they were asked to construct: (a) pairs of equivalent triangles “in as many ways as possible” and to study their area and their perimeter using any of the tools provided and (b) “any possible sequence of modifications of an original triangle into other equivalent ones”. As regards the concept of area and in contrast to a paper and pencil environment, Cabri provided students with different and potential opportunities in terms of: (a) means of construction, (b) control, (c) variety of representations and (d) linking representations, by exploiting its capability for continuous modifications. By exploiting these opportunities in the context of the given open tasks, students were helped by the tools provided to develop a broader view of the concept of area than the typical view they would construct in a typical paper and pencil environment.     

矩阵的广义特征值及特征向量的神经网络方法

矩阵特征值及特征向量计算在实际问题中有广泛的应用.应用神经网络方法来计算广义特征值及对应的特征向量,给出了相应的算法,并对给出的算法在数学上进行了严格证明.并用实例验证了其正确性.     

Method of lines with boundary elements for 1‐D transient diffusion‐reaction problems

Time‐dependent differential equations can be solved using the concept of method of lines (MOL) together with the boundary element (BE) representation for the spatial linear part of the equation. The BE method alleviates the need for spatial discretization and casts the problem in an integral format. Hence errors associated with the numerical approximation of the spatial derivatives are totally eliminated. An element level local cubic approximation is used for the variable at each time step to facilitate the time marching and the nonlinear terms are represented in a semi‐implicit manner by a local linearization at each time step. The accuracy of the method has been illustrated on a number of test problems of engineering significance. © 2005 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 2006     

Roles of SiH4 and SiF4 in growth and structural changes of poly-Si films

The structural properties of polycrystalline silicon films, prepared by plasma enhanced chemical vapor deposition system, with different flow rates of SiH₄/SiF₄ mixtures at 300 °C were investigated. This study indicates that the low hydrogen coverage on the growing surface, under optimum fluorine radicals, will be leaded to an improvement of crystallized area as compared with case of high hydrogen coverage surface. Moreover, the studies of the role of SiH₄ and SiF₄ radicals show that the SiH₄ radicals are important in the nucleation and growth of grains. However, SiF₄ radicals are effective in the structural change of grain boundaries regions and by this way, in the present system, establish the growth of grains under the dominant 〈1 1 0〉 direction. The stress investigation indicates that addition of high flow rate of SiF₄ in amorphous film, results in the nearly stress free films. Finally, we found that the changes in g-value reflect the changes in the intrinsic compressive and tensile stress in the both polycrystalline and amorphous silicon films.