Study of the pulsed laser vapor doping of Si(1 0 0) with KrF excimer laser and BCl3 gas

The properties of pulsed laser vapor doping on p-Si(1 0 0) with a KrF (248 nm) excimer pulsed laser (248 nm) and BCl₃ gas are reported in this paper. The doped samples are characterized by the resistance measured using a four-probe method, since the sheet resistance changes with the carrier concentration of the sample. The doping effects with the variation of laser energy density, pulse number, and the pressure of BCl₃ were investigated in terms of the sheet resistance. In this way, the optimized parameters were obtained and used for the positive heavy doping on p-Si(1 0 0) and p-Si(1 1 1). Then, using a square mesh under the above conditions, an image doping was completed. Finally, the metal–semiconductor Ohmic contacts were realized by plating Ag and Cu films on the doped surface.     

同轴双无衍射光的理论与实验

提出同轴双无衍射光的概念。如果两束汇聚角略有不同的同轴无衍射光同时存在，则它们相互之间叠加干涉后产生一种纵向呈周期变化的光场结构，这是一种新的光束空间分布，这种光束在横向仍是一种同心环光斑，可用于精密对准。而在不同纵向位置，这些同心环的强度分布是不同的，且是周期性变化的。同轴双无衍射光的轴向周期性可用于沿光束传播方向的定位。文中提出了双环缝法、分段圆锥透镜法、正弦相位环光栅法等实现同轴双无衍射光的理论与实验方法，分析了同轴双无衍射光的横向与纵向传播的衍射光斑特性，理论计算与实验测量的结果基本相符合。     

Towards the synthesis of MAX-phase functional coatings by pulsed laser deposition

Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti₃SiC₂ MAX-phase formulated ablation target on oxidized Si(1 0 0) and MgO(1 0 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900 K, and the pressure in the deposition chamber ranged from vacuum (10⁻⁵ Pa) to 0.05 Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20 eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti₃SiC₂ related reflections were found. Only a very weak TiC(2 0 0) reflection was seen, indicating the presence of a small amount of crystalline TiC.     

A simple model for high fluence ultra-short pulsed laser metal ablation

The ultra-short laser metal ablation is a very complex process, the complete simulation of which requires applications of complicated hydrodynamics or molecular dynamics models, which, however, are often time-consuming and difficult to apply. For many practical applications, where the laser ablation depth is the main concern, a simplified model that is easy to apply but at the same time can also provide reasonably accurate predictions of ablation depth is very desirable. Such a model has been developed and presented in this paper, which has been found to be applicable for laser pulse duration up to 10 ps based on comparisons of model predictions with experimental measurements.     

自由电子激光振荡器的二维数值模拟

在柱二维坐标系中,用数值计算方法求解了摇摆器内电子模拟方程组、光场方程组和无源区(不含摇摆器区)经非自适应方法变换后的无源旁轴波动方程并设计了相应的程序R_2D。用该程序计算的数值结果表明,在有源条件下二维数值模拟结果与高斯光束近似下的数值模拟结果符合较好;取完全相同的计算条件R-2D程序与洛斯阿拉莫斯实验室(LANL)的FELEX程序的计算结果符合较好;初步认为LANL实验数据的物理图象合理,数值结果基本可信;最后给出北京自由电子激光器(BFEL)的一些物理数据。     

KrF准分子激光激发掺锗光纤折射率扰动的非线性过程

本文采用了一种简单的功率监测法,观察了KrF准分子激光对掺锗光纤折射率影响的非线性过程。观察到子纤芯折射率扰动过程中非稳定现象、饱和现象和折射率扰动的非线性。     

类锂硅离子软X射线激光研究

在激光等离子体典型参数条件下，利用碰撞－辐模型计算了类锂硅离子５ｆ－３ｄ和４ｆ－３ｄ跃的粒子数反转比率和激光增益系数。讨论了不同热带条件和不同冷却速度下，激光增益系统数的变化。计算结果表明，高功率，短脉冲激光生产的高温等离子体在快速冷却条件下能产生软Ｘ射的线激光增益。     

Microstructure Evolution in Laser RS Co-base Metastable Alloy

ＭｉｃｒｏｓｔｒｕｃｔｕｒｅＥｖｏｌｕｔｉｏｎｉｎＬａｓｅｒＲＳＣｏ－ｂａｓｅＭｅｔａｓｔａｂｌｅＡｌｌｏｙＷＡＮＧＡｎａｎ；ＣＨＥＮＧＳｈｕｎｑｉ；ＧＵＯＺｈｉｙａｏ（ＫｕｎｍｉｎｇＵｎｉｖｅｒｓｉｔｙｏｆＳｃｉｅｎｃｅａｎｄＴｅｃｈｎｏｌｏｇｙ，...     

自由电子激光的医学应用

自由电子激光这种新型光源非常适合于医学应用。通过对医用自由电子激光器的简要介绍,探讨了自由电子激光与人体组织的相互作用及其在医学上的应用前景。     

曙光一号自由电子激光器的理论计算

系统总结曙光一号自由电子激光器理论计算的主要结果:包括曙光一号装置主要参数的选取和理解;磁场失谐曲线的计算;常参数摇摆器和变参数摇摆器的主要结果;高阶波导模的贡献;电子束参数扰动对激光性能的影响;空间电荷效应等。计算结果表明,常参数摇摆器激光输出功率可达80MW,效率约50％;变参数摇摆器激光输出功率可达250MW左右,效率约16％。