Silicon transport under rotating and combined magnetic fields in liquid phase diffusion growth of SiGe

The effect of applied rotating and combined (rotating and static) magnetic fields on silicon transport during the liquid phase diffusion growth of SiGe was experimentally studied. 72‐hour growth periods produced some single crystal sections. Single and polycrystalline sections of the processed samples were examined for silicon composition. Results show that the application of a rotating magnetic field enhances silicon transport in the melt. It also has a slight positive effect on flattening the initial growth interface. For comparison, growth experiments were also conducted under combined (rotating and static) magnetic fields. The processed samples revealed that the addition of static field altered the thermal characteristics of the system significantly and led to a complete melt back of the germanium seed. Silicon transport in the melt was also enhanced under combined fields compared with experiments with no magnetic field. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

应变Si/(001)Si1-xGex电子迁移率

依据离化杂质散射、声学声子散射和谷间散射的散射模型,在考虑电子谷间占有率的基础上,通过求解玻尔兹曼方程计算了不同锗组分下,不同杂质浓度时应变Si/(001)Si_1-xGe_x的电子迁移率.结果表明:当锗组分达到0.2时,电子几乎全部占据Δ₂能谷;低掺杂时,锗组分为0.4的应变Si电子迁移率与体硅相比增加约64%;对于张应变Si NMOS器件,从电子迁移率角度来考虑不适合做垂直沟道.选择相应的参数,该方 关键词： 电子谷间占有率 散射模型 锗组分 电子迁移率     

Czochralski-growth of germanium crystals containing high concentrations of oxygen impurities

Oxygen-containing germanium (Ge) single crystals with low density of grown-in dislocations were grown by the Czochralski (CZ) technique from a Ge melt, both with and without a covering by boron oxide (B₂O₃) liquid. Interstitially dissolved oxygen concentrations in the crystals were determined by the absorption peak at 855 cm⁻¹ in the infrared absorption spectra at room temperature. It was found that oxygen concentration in a Ge crystal grown from melt partially or fully covered with B₂O₃ liquid was about 10¹⁶ cm⁻³ and was almost the same as that in a Ge crystal grown without B₂O₃. Oxygen concentration in a Ge crystal was enhanced to be greater than 10¹⁷ cm⁻³ by growing a crystal from a melt fully covered with B₂O₃; with the addition of germanium oxide powder, the maximum oxygen concentration achieved was 5.5×10¹⁷ cm⁻³. The effective segregation coefficients of oxygen in the present Ge crystal growth were roughly estimated to be between 1.0 and 1.4.     

Coherent communications

Abstract

Coherent lightwave techniques, when compared to direct detection techniques, offer nearly quantum noise limited sensitivity as well as fine tunability similar to that obtained at radio frequencies. These two aspects provide communication systems planners and engineers the means to better exploit the huge bandwidth of single mode optical fibers.

Research activity in this field started in the early 1980s, and some laboratory experiments and field trials were performed by the end of the decade, showing that such techniques are suitable for transmitting multigigabit per second signals to distances well exceeding hundred kilometers. On the other hand, coherent multichannel, frequency division multiple access, local area networks have been proposed and experimented worldwide.

This article will discuss the theoretical advantages and limitations of the various modulation and detection formats together with the state of the art. Moreover, some aspects, related to the introduction of coherent systems in local and metropolitan area networks, will be treated. Finally some experimental data will be provided and future evolution will be discussed.     

Ge在Ru(0001)表面上生长及其性质研究

报道Ge在Ru(0001)表面上生长以及相互作用行为的扫描隧道显微镜（STM）和x射线光电子能谱（XPS）研究. STM的实验结果表明Ge在Ru(0001)表面的生长呈典型的Stranski_Krastanov生长模式，Ge的覆盖度小于单原子层时呈层状生长，而从第二层开始呈岛状生长. XPS测量显示衬底Ru(0001)与Ge的相互作用很弱. Ru(0001)表面的Ru 3d5/2和Ru 3d3/2芯态结合能分别处于2798和2840 eV. 随着Ge的生长，到Ge层的厚度为20个单原子层，衬底Ru 3d芯态结合能减小了约02 eV，而Ge 3d芯态结合能从Ge低覆盖度时的289 eV增加到了290 eV，其相对位移约为01 eV. 关键词： Ge Ru表面 生长 相互作用     

Low-temperature photoluminescence in germanium irradiated by fast neutrons

This study was carried out to investigate low-temperature (T=4.2 K) photoluminescence caused by interdopant recombination transitions in n-germanium irradiated by fast (epicadmium) reactor neutrons and subjected to “complete” annealing (+450°C, 24 h). It is shown that lines of interdopant radiative recombination observed in initial and in irradiated and annealed specimens are caused by both initial impurities and (mainly) dopants (As and Ga) implanted by transmutation as well as by defect sets stable at long-time high-temperature annealing that do not contain fine dopants. Belarusian State University, 4, F. Skorina Ave., Minsk, 220050, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 4, pp. 479–482, July–August, 1997.     

Synthesis, structure, and reactivity of a pyridine-stabilized germanone

The first isolable pyridine‐stabilized germanone has been prepared and its reactivity toward trimethylaluminum has been investigated. The germanone adduct results from a stepwise conversion that starts from 4‐dimethylaminopyridine (DMAP) and the ylide‐like N‐heterocyclic germylene LGe: (L=CH{(C?CH₂)(CMe)[N(aryl)]₂}, aryl=2,6‐iPr₂C₆H₃) ( 1 ) at room temperature, and gives the corresponding germylene–pyridine adduct L(DMAP)Ge: ( 2 ) in 91 % yield. The latter reacts with N₂O at room temperature to form the desired germanone complex L(DMAP)Ge?O ( 3 ) in 73 % yield. The Ge? O distance of 1.646(2) Å in 3 is the shortest hitherto reported for a Ge?O species. The reaction of 3 with trimethylaluminum leads solely to the addition product LGe(Me)O[Al(DMAP)Me₂] ( 4 ). The latter results from insertion of the Ge?O subunit into an Al? Me bond of AlMe₃ and concomitant migration of the DMAP ligand from germanium to the aluminum atom. Compounds 2 – 4 have been fully characterized by analytical and spectroscopic methods. Their molecular structures have been established by single‐crystal X‐ray crystallographic analysis.