Printable Bioelectronics To Investigate Functional Biological Interfaces

Thin‐film transistors can be used as high‐performance bioelectronic devices to accomplish tasks such as sensing or controlling the release of biological species as well as transducing the electrical activity of cells or even organs, such as the brain. Organic, graphene, or zinc oxide are used as convenient printable semiconducting layers and can lead to high‐performance low‐cost bioelectronic sensing devices that are potentially very useful for point‐of‐care applications. Among others, electrolyte‐gated transistors are of interest as they can be operated as capacitance‐modulated devices, because of the high capacitance of their charge double layers. Specifically, it is the capacitance of the biolayer, being lowest in a series of capacitors, which controls the output current of the device. Such an occurrence allows for extremely high sensitivity towards very weak interactions. All the aspects governing these processes are reviewed here.     

Void‐Assisted Ion‐Paired Proton Transfer at Water–Ionic Liquid Interfaces

At the water–trihexyl(tetradecyl)phosphonium tris(pentafluoroethyl)trifluorophosphate ([P_14,6,6,6][FAP]) ionic liquid interface, the unusual electrochemical transfer behavior of protons (H⁺) and deuterium ions (D⁺) was identified. Alkali metal cations (such as Li⁺, Na⁺, K⁺) did not undergo this transfer. H⁺/D⁺ transfers were assisted by the hydrophobic counter anion of the ionic liquid, [FAP]^?, resulting in the formation of a mixed capacitive layer from the filling of the latent voids within the anisotropic ionic liquid structure. This phenomenon could impact areas such as proton‐coupled electron transfers, fuel cells, and hydrogen storage where ionic liquids are used as aprotic solvents.     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

Co3O4/CoO/Co/石墨复合材料的制备及其电容性能研究

以葡萄糖为前驱物,采用水热法合成了胶态碳球,然后利用胶态碳球制备了Co3O4/CoO/Co/石墨复合材料.此复合材料与其它研究者采用类似方法制备的物质相比具有完全不同的结构,它们是由多层不同物质组成的球形结构,其最外层是Co3O4,第二层是CoO,第三层是Co,最里面一层是石墨.采用循环伏安和恒电流充放电等方法对Co3...     

Ce掺杂Mn3O4及其电化学电容行为

用溶胶-凝胶方法合成了Mn₃O₄和Ce掺杂Mn₃O₄. 采用X射线衍射(XRD)、傅里叶变换红外(FT-IR)光谱、场发射扫描电镜(FESEM)和透射电子显微镜(TEM)对其结构和形貌进行了表征. 采用循环伏安、电化学交流阻抗和恒流充放电技术对其电化学性能进行了测试. 研究结果表明, Ce掺杂对Mn₃O₄的形貌和电化学性能均有显著影响. 当Ce离子占金属离子总量的3%时, 掺杂Mn₃O₄的单电极比电容高达477 F·g^-1, 比未掺杂的提高了43.7%, 并且表现出更好的循环稳定性.     

Coral reef-like polyanaline nanotubes prepared by a reactive template of manganese oxide for supercapacitor electrode

Coral reef-like PANI nanotubes composed of nanopaticles were successfully synthesized by a reactive template of manganese oxide.The structure was characterized by using SEM,TEM,and FT-IR,and the supercapacitive behaviors of these nanotubes were investigated with cyclic voltammetry（CV）,and charge-discharge tests,respectively.A maximum specific capacitance of 533 F/g could be achieved in 1mol/L aqueous H₂SO₄ with the potential range of -0.2 to 0.8 V（vs.the saturated calomel electrode） in a half-cell setup configuration for PANI electrode,suggesting its potential application in the electrode material for electrochemical capacitors.     

Comparison of Planar and 3‐D Interdigitated Electrodes as Electrochemical Impedance Biosensors

It has been reported that the introduction of a dielectric barrier between adjacent digits of an interdigitated electrode array can improve the sensitivity of the array as an electrochemical impedance biosensor. Here we present an in‐depth analysis of the impedance in planar interdigitated electrodes and 3‐D interdigitated electrodes (with dielectric barriers). The analysis indicates that the planar geometry not only provides lower impedance but also a higher change impedance as a result of molecular immobilization on the electrode array surface.     

一种应用于CMOS图像传感器的电容阵列PGA研究

研究了一种应用于1 024×1 024CMOS图像传感器中的温度计码电容阵列型可编程增益放大器（PGA）。该PGA采用开关电容阵列结构,通过改变输入与反馈电容值,实现了0～18dB的增益;同时,该PGA具有结构简单、电容阵列面积小、带宽大和反馈系数大等特点,其增益带宽50MHz、总谐波失真（THD）小于50dB。该PGA的信号处理能力完全满足12MHz速率、69dB动态范围CMOS图像传感器内部集成ADC对模拟输入信号的要求。     

Development of Na+-sensitive membranes based on sputtered Na-Al-Si glasses

Na⁺-sensitive microdevices are of increasing interest for integration in microanalytical systems e.g. for biomedical applications or for industrial process control. In order to produce ultra thin Na⁺-sensitive layers with fixed and reproducible composition and, in particular, defined Na concentration by means of RF sputtering, an off-axis geometry of a magnetron with cylindrical target was chosen for minimizing back-sputtering effects from the already deposited material. With this inverted cylindrical magnetron (ICM) it was possible to obtain reproducible and controllable sodium aluminosilicate glass layers on semiconductor substrates. Several surface and thin layer analytical techniques were applied for characterization of the membranes and for stoichiometry control. Especially by the non-destructive nuclear reaction analysis method a constant Na profile throughout the glass layer and — together with AES depth profiles — the diffusion barrier effect of an Si₃N₄ interface layer could be verified. Electrochemical measurements proved Nernstian sensitivity down to 10^–4 M Na⁺ in solutions of pH 7, supporting sufficient stability and reproducibility of the sputtered Na⁺-sensitive layers.