偏硼酸钡低温相晶体在高压下的电学性质与相变

 在金刚石压砧装置上，采用电容和电阻测量方法研究了偏硼酸钡低温相晶体（β-BaB₂O₄）在室温下和16 GPa内的电容、电阻与压力的关系。实验结果表明，它的电容在2.1、4.6、6.4、8、9.5、10.7 GPa左右都有一个突变。这说明β-BaB₂O₄内部的结构状态在这些压力下都发生了变化，可能发生了相变。还发现β-BaB₂O₄样品在较高压力下已发生了非晶化转变，而且是不可逆的，在卸压后被保留下来。这个非晶化转变的压力大约在11~12 GPa。     

An application of the capacitance matrix method to accommodate masked land areas and island circulations in a primitive equation ocean model

The capacitance matrix method has been implemented in a primitive equation ocean model to accommodate islands and portions of irregular coastal boundaries that cannot be treated adequately by boundary-fitted orthogonal curvilinear co-ordinates. The algorithm preserves the ability to solve the streamfunction equation using fast and accurate elliptic solvers that require a rectangular computational domain. By superposition of a set of island Green functions, the solution is adjusted to ensure continuity of pressure around each island. The implementation is tested by comparison with an analytic solution for wind-driven flow in a closed basin similar to the southwest Pacific Ocean.     

间接馈电的磁通量压缩发生器的参数选择

 从电路方程出发较详细地分析了间接馈电的磁通量压缩发生器的工作原理。分析表明：在设计间接馈电的磁通量压缩发生器时，只有馈电回路的电感L₁和电容C₀满足(L₁C₀)^1/2>>T时，MFCG才有效运行；耦合形式的MFCG能使初始磁通量放大；馈电回路电容大小的选择将影响MFCG输出的电流脉冲形状。这些结论对于设计磁通量压缩发生器具有指导意义。     

纳米隧道结的量子电容现象

利用STM针尖和二维Au纳米团簇构造的双隧道结，通过对单电子隧穿谱的测量，研究了纳米隧道结的电容随隧道结宽度的变化，发现电容随结宽度的变化偏离了经典电容的行为，为纳米隧道结的量子电容效应提供了实验证据。     

小型静电陀螺仪电极面积及电极装配误差研究

介绍了小型静电陀螺仪的电极支承结构和电极面积误差引起的干扰力矩的计算公式,并根据影响电极面积的各种因素推导出了电极面积的误差范围。根据装配误差产生干扰力矩的情况确定了最终的装配精度,为电极的设计提供了重要的参考依据。     

容量矩阵法在涡方法中的应用

本文将容量矩阵技术与快速Fourier变换相结合求解非矩形域的Poisson方程,再与格子涡方法相结合,发展了一套求解复杂外形的快速涡方法。作为算例,计算了有厚度平板和楔形体的分离流动,得到了满意的结果。特别是在垂直平板绕流中,模拟出了由于剪切层不稳定性引起的小涡结构。     

Printable Bioelectronics To Investigate Functional Biological Interfaces

Thin‐film transistors can be used as high‐performance bioelectronic devices to accomplish tasks such as sensing or controlling the release of biological species as well as transducing the electrical activity of cells or even organs, such as the brain. Organic, graphene, or zinc oxide are used as convenient printable semiconducting layers and can lead to high‐performance low‐cost bioelectronic sensing devices that are potentially very useful for point‐of‐care applications. Among others, electrolyte‐gated transistors are of interest as they can be operated as capacitance‐modulated devices, because of the high capacitance of their charge double layers. Specifically, it is the capacitance of the biolayer, being lowest in a series of capacitors, which controls the output current of the device. Such an occurrence allows for extremely high sensitivity towards very weak interactions. All the aspects governing these processes are reviewed here.     

Void‐Assisted Ion‐Paired Proton Transfer at Water–Ionic Liquid Interfaces

At the water–trihexyl(tetradecyl)phosphonium tris(pentafluoroethyl)trifluorophosphate ([P_14,6,6,6][FAP]) ionic liquid interface, the unusual electrochemical transfer behavior of protons (H⁺) and deuterium ions (D⁺) was identified. Alkali metal cations (such as Li⁺, Na⁺, K⁺) did not undergo this transfer. H⁺/D⁺ transfers were assisted by the hydrophobic counter anion of the ionic liquid, [FAP]^?, resulting in the formation of a mixed capacitive layer from the filling of the latent voids within the anisotropic ionic liquid structure. This phenomenon could impact areas such as proton‐coupled electron transfers, fuel cells, and hydrogen storage where ionic liquids are used as aprotic solvents.     

单轴应变硅N沟道金属氧化物半导体场效应晶体管电容特性模型

电容特性模型是单轴应变硅金属氧化物半导体场效应晶体管(Si MOSFET)和电路进行瞬态分析、交流小信号分析、噪声分析等的重要基础. 本文首先建立了单轴应变Si NMOSFET 的16 个微分电容模型, 并将微分电容的仿真结果与实验结果进行了比较, 验证了所建模型的正确性. 同时对其中的关键性栅电容C_gg 与应力强度、偏置电压、沟道长度、栅极掺杂浓度等的关系进行了分析研究. 结果表明, 与体硅器件相比, 应变的引入使得单轴应变Si NMOSFET器件的栅电容增大, 随偏置电压、沟道长度、栅极掺杂浓度的变化趋势保持不变.     

Co3O4/CoO/Co/石墨复合材料的制备及其电容性能研究

以葡萄糖为前驱物,采用水热法合成了胶态碳球,然后利用胶态碳球制备了Co3O4/CoO/Co/石墨复合材料.此复合材料与其它研究者采用类似方法制备的物质相比具有完全不同的结构,它们是由多层不同物质组成的球形结构,其最外层是Co3O4,第二层是CoO,第三层是Co,最里面一层是石墨.采用循环伏安和恒电流充放电等方法对Co3...