40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

平面波经小圆孔非傍轴衍射的轴上光强解析分析

用亥姆霍兹 基尔霍夫积分定理和基尔霍夫边界条件,推导出了平面波经小圆孔非傍轴衍射时轴上强度的简单解析表达式,研究了平面波经小圆孔后整个衍射空间非傍轴的轴上光强分布.给出了计算圆孔菲涅尔数的精确公式,重新检查了通常的菲涅尔数公式的有效性.数值计算显示,应用解析表达式所得的结果与应用衍射积分公式所得的结果完全一致.     

离轴球形粒子对高斯波束的散射光通量的计算

利用矢量球谐函数展开的方法,研究了离轴球形粒子对椭圆高斯波束的散射。根据其远区散射场的形式,得出了归一化散射场的斯托克斯参量(散射强度)与颗粒直径、折射率以及散射角的关系。建立了计算离轴球形粒子对高斯波束散射通量的解析模型,计算了散射光在任意散射方向上的光通量,得到了前向任意立体角内散射通量的计算公式,为激光散射探测提供了理论依据。     

红外耦合光学系统设计

红外目标模拟器由红外目标图像发生器和投影光学系统组成。该红外光学系统是一个要求与2个导引光学系统的光学技术参数相匹配的长焦距、大视场和具有像方远心光路的中红外光学系统。叙述用于红外目标模拟器的红外耦合光学系统的设计原理，提出它与导引光学系统一起可组成放大倍率M=4.5×的红外投影光学系统，并指出IR CRT产生的图像通过红外投影光学系统可成像在导引接收器上。针对给出的红外耦合光学系统的设计特点和技术要求，光学材料选取硅（Si） 锗（Ge） 硅（Si），采用简单的柯克三片式结构完成光学系统设计。设计评价结果表明，该系统的光学性能和成像质量均满足设计指标要求。     

导体壳内外的电场彼此独立的简易证明

本文提供了一种证明导体壳的内外电场彼此独立的简易方法.     

Pulsed reactive crossed beam laser ablation of La0.6Ca0.4CoO3 using O: Where does the oxygen come from?

The composition of thin perovskite films, especially the oxygen content, is a crucial parameter which influences many physical properties, such as conductivity and catalytic activity. Films produced by pulsed laser deposition are normally annealed in an oxygen atmosphere after deposition to achieve a desired oxygen content. In pulsed reactive crossed beam laser ablation, no annealing step is necessary, but a fundamental question regarding this deposition technique is still open: where does the oxygen in the films come from?There are three possibilities, i.e. from the target, from the gas background, or from the gas pulse. To answer this question two experiments were performed: ¹⁸O₂ was used during the deposition process as background gas with ¹⁶O anions in the target and ¹⁶O₂ gas pulse, and a ¹⁸O₂ gas pulse with ¹⁶O from the target and background. These experiments revealed that the quantification of the oxygen origin is only possible, when no oxygen exchange occurs at the deposition temperature. The films are characterized after deposition by elastic recoil detection analysis (ERDA) to determine the ¹⁶O/¹⁸O ratio. Experiments with different oxidizing species in the gas pulse (N₂O and O₂) confirm that the oxidizing potential (N₂O > O₂) as well as the number of molecules are important.     

光学薄膜测量时平顶光束激励的表面热透镜理论模型

推导了调制的平顶光束激励下基于Fresnel衍射积分的表面热透镜理论，通过数值模拟，比较了平顶光束和高斯光束激励下样品内部温度场、表面形变场和探测光衍射信号的径向分布，分析了影响表面热透镜信号的实验参数.结果表明，在最佳探测位置，平顶光束激励下的表面热透镜系统比相同情况下高斯光束激励下的灵敏度高，最高时约2倍，更有利于薄膜吸收测量. 关键词： 表面热透镜 光学薄膜 平顶光束     

Propagation of the kurtosis parameter of Hermite-cosh-Gaussian beams

Starting from the propagation equation of Hermite-cosh-Gaussian (HChG) beams and the intensity moments definition, an analytical expression for the propagation of the kurtosis parameter of unapertured HChG beams passing through paraxial optical ABCD systems is derived and illustrated numerically. Special interesting cases are discussed, in particular, the kurtosis parameter of HChG beams at the waist plane is obtained readily from our general propagation expression.     

An improved injector bunching geometry for ATLAS

The bunching system of the ATLAS positive ion injector (PII) has been improved by relocating the harmonic buncher to a point significantly closer to the second stage sine-wave buncher and the injector LINAC. The longitudinal optics design has also been modified and now employs a virtual waist from the harmonic buncher feeding the second stage sine-wave buncher. This geometry improves the handling of space charge for high-current beams, significantly increases the capture fraction into the primary rf bucket and reduces the capture fraction of the unwanted parasitic rf bucket. Total capture and transport through the PII has been demonstrated as high as 80% of the injected dc beam while the population of the parasitic, unwanted rf bucket is typically less than 3% of the total transported beam. To remove this small residual parasitic component a new traveling-wave transmission-line chopper has been developed reducing both transverse and longitudinal emittance growth from the chopping process. This work was supported by the U.S. Department of Energy under contract W-31-109-ENG-38.     

Epitaxy: the motion picture

The engineering of many modern electronic devices demands control over a crystal down to the thickness of a single layer of atoms—and future demands will be even more challenging. Such control is achieved by the method of crystal growth known as epitaxy, and that makes this method the subject of intense study. More than that, recent advances are revolutionizing our knowledge of how surfaces grow. In fact, growing surfaces show a beautifully rich variety of phenomena, many of which are only now beginning to be uncovered. In the past few years many surface imaging techniques have been used to give us a close look at how crystals grow—while they are growing. The purpose of this article will be to illustrate some of the ways real surfaces grow and change as revealed by some of the latest in situ microscopic imaging technologies.

It is often said that crystal growth is more of an art than a science. Here we will show that it is emphatically both.