Arsenidostannate mit Arsen-analogen [SnAs]-Schichten: Darstellung und Struktur von Na[Sn2As2], Na0,3Ca0,7[Sn2As2], Na0,6Sr0,6[Sn2As2], Na0,6Ba0,4[Sn2As2] und K0,3Sr0,7[Sn2As2]

Arsenidostannates with [SnAs] Nets Isostructural to Grey Arsenic: Synthesis and Crystal Structure of Na[Sn₂As₂], Na_0.3Ca_0.7[Sn₂As₂], Na_0.4Sr_0.6[Sn₂As₂], Na_0.6Ba_0.4[Sn₂As₂], and K_0.3Sr_0.7[Sn₂As₂] The metallic lustrous compounds Na[Sn₂As₂], Na_0.3Ca_0.7[Sn₂As₂], Na_0.4Sr_0.6[Sn₂As₂], Na_0.6Ba_0.4[Sn₂As₂] and K_0.3Sr_0.7[Sn₂As₂] were prepared from melts of mixtures of the elements. The compounds crystallize in the trigonal system (space group R3 m, No. 166, Z = 3) with lattice constants see in “Inhaltsübersicht”. The structures are isotypic to Sr[Sn₂As₂] containing puckered [SnAs] nets which are stacked with a sequence of six layers. The E(I)/E(II) atoms are located between each second [SnAs] layer in trigonal antiprismatic interstices formed by As atoms. In the resulting [Sn₂As₂] double layers the _∞²[SnAs] nets are stacked in such a way that additional Sn—Sn contacts arise.     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.     

SrO—Al2O3—SiO2：Eu^3＋,Bi^3＋发光体的溶胶—凝胶法合成

制备无机固体材料大都采用高温固相反应,1971年Dislich报导了用溶胶-凝胶法制备多组份固体材料。近年来,有报导利用此法研制玻璃、玻璃陶瓷和陶瓷。我们在过去工作的基础上,合成了SrO-Al_2O_3-SiO_2:Eu~(3 ),Bi~(3 )发光体,研究了从凝胶至发光晶体的转变过程、Eu~(3 )和Bi~(3 )在SrO-Al_2O_3-SiO_2基质中的发光性质以及Bi~(3 )对 EU~(3 )的能量传递。     

痕量砷流动注射在线还原氢化物发生原子吸收测定

方法采用流动注射停流技术使水及土壤浸出液中Ａｓ（Ｖ）在线还原为Ａｓ（Ⅲ），不经手工还原，用氢化物发生原子吸收光谱法直接测定砷的含量。含４ｍｏｌ／Ｌ ＨＣｌ的样品溶液与３０％碘化钾溶液在编结式反应器中混合，并在采样环中停流４０ｓ，达完全还原后注入到载流中与硼氢化钠反应，采样速度５５次／ｈ，检出限（３δ）０．１μｇ／Ｌ，对自来水和土壤浸出液的加标回收结果满意。     

Y2O3和CeO2复合掺杂ZrO2纳米晶的制备与表征

以ZrOCl2.8H2O,Y2O3,Ce（NO3）3.5.5H2O为原料,NH3.H2O作沉淀剂,少量表面活性剂PE作分散剂,采用反向共沉淀-喷雾干燥法,结合物理、化学分散技术,成功地制备了Y2O3,CeO2复合掺杂ZrO2纳米粉末。通过DSC-TG,XRD,XPS,BET和SEM等方法对所制得粉末进行了表征。结果表明：以Ce0.1Y0.1Zr0.8O1.95化学计量比制备的多元氢氧化物胶体经过喷雾干燥处理后,在500℃基本完成水合氧化物的分解,577℃附近完成由非晶相向立方相的转变;经过580-1000℃煅烧后,CeO2和Y2O3已经完全固溶到ZrO2中,形成类质同相体,该粉末系列均属于立方相萤石结构;掺杂进入ZrO2晶格中的Ce呈＋4价形式存在;比表面积由22.0 m^2.g^-1（580℃煅烧）减至4.97 m^2.g^-1（1000℃煅烧）;SEM结果显示800℃煅烧的该粉末颗粒尺寸分布均匀,多呈类球状,且粒径在50-80 nm。     

新型环形聚阴离子[{WO(H_2O)}_3(AsW_8O31)_3]~21-的结构及表征

在pH=3.0的水溶液中，Na_2WO_4·2H_2O与NaAsO_2·6H_2O和NH_4Cl反应，得 到了新的杂多钨酸盐(MH_4)_19Na_2[{WO(H_2O)}_3(AsW_8O31)_3]·45H_2O单晶， 用X射线单晶衍射法及元素分析确定了其结构，晶体属单斜晶系，空间群C2/c，晶 胞参数为：a=3.1165(11)nm, b=1.7388(7)nm, c=2.2789(9)nm, β=97.342(6)°, V=12.248(8)nm~3, Z=4, R_1=0.0571,wR_2=0.0741[I＞2σ(I)]. 环型聚阴离子 [{WO(H_2O)}_3(AsW_8O31)_3]~21-是由三个{WO(H_2O)}桥连三个新发现的 {AsW_8O31}单元构成的，环聚离子[{WO(H_2O)}_3(AsW_8O31)_3]~21-具有近似D_ (3h)对称性。对该化合物还进行了~183W NMR, IR和TG表征。     

Influence of nano-structure on electrolytic properties in CeO2 based system

Doped ceria (CeO₂) compounds are fluorite type oxides that show oxygen ionic conductivity higher than yttria stabilized zirconia, in oxidizing atmosphere. In order to improve the conductivity, the effective index was suggested to maximize the oxygen ionic conductivity in doped CeO₂ based oxides. In addition, the true microstructure of doped CeO₂ was observed at atomic scale for conclusion of conduction mechanism. Doped CeO₂ had small domains (10-50 nm) with ordered structure in a grain. It is found that the electrolytic properties strongly depended on the nano-structural feature at atomic scale in doped CeO₂ electrolyte. This revised version was published online in August 2006 with corrections to the Cover Date.     

Hydrothermal Syntheses and Structural Characterization of Two Novel Arsenic–Vanadium Clusters: [Co(2,2′-bpy)3]2[As8V14O42(H2O)]·3H2O and [2,2′-bpy][Ni(2,2′-bpy)3]2[As8V14O42(H2O)]·3H2O

Two new arsenic–vanadium clusters, [Co(2,2- bpy)₃]₂[As₈V₁₄O₄₂(H₂O)] · 3H₂O (1), [2,2-bpy][Ni(2,2-bpy)₃]₂[As₈V₁₄O₄₂(H₂O)] · 3H₂O (2) (2,2-bpy=2,2-bipyridine), have been hydrothermally synthesized and characterized by IR, elemental analysis, UV–VIS, EPR, TGA, XPS, and single crystal X-ray diffraction analysis. Crystal data: 1, triclinic, P1, a=14.368(3) Å, b=16.753(3) Å, c=24.632(5) Å, =94.15(3)°, =93.16(3)°, =113.05(3)°, Z=2; 2, monoclinic, P2₁/c, a= 30.2150(4) Å, b=14.0690(3) Å, c=26.0536(3) Å, =106.8960(10)°, Z=4. X-ray crystallographic studies showed that crystals 1 and 2 are both composed of discrete cluster anion [As₈V₁₄O₄₂(H₂O)]^4– and transition metal coordination complexes [M(2,2-bpy)₃]²⁺ (M=Co or Ni). Interestingly, compound 2 contains another neutral organic space filler of 2,2-bpy. To the best of our knowledge, compounds 1 and 2 are the first examples of structurally characterized vanadium/2,2-bpy/arsenate polyoxometallates.     

碱土金属掺杂纳米TiO2催化剂的制备与光催化活性的评价

The nanometer TiO₂ were prepared by the hydrolyze-gel method and fellowed by doping alkaline-earth metals (Mg, Ca, Sr, Ba). XRD, SEM, diffuse reflection spectra were used to investigate their characteristices. The result indicates that the average particles size of the TiO₂ is about 80 nm and keep uniformity in distributing. The product was mainly anatase in 300～400 ℃ calcinations, the einstein shift of absorption spectrum was observed after doping the alkaline-earth metals. The best mole percentages of Mg, Ca, Sr and Ba are 0.5%, 1.0%, 1.5%, 1.5% respectively. Under the same reaction conditions, it is more effective to the UV-catalyed degradation reaction that the catalysts containing Mg and Ca were calcined at 300 ℃ for 1h or containing Sr and Ba were calcined at 400 ℃ for 1 h. The photocatalystic activity is considerably depondent on pH and the concentration of the oxidant. Using the sunlight to do the degradation experimental, the result also show that the doping catalysts has higher degradation efficiency than that of pure TiO₂.     

Growth and Spectral Properties of Yb^3＋-doped Ba3Gd（BO3）3 Crystal

Crystal of Yb3+-doped Ba3Gd(BO3)3 has been grown by the Czochralski method. The spectroscopic characterizations have been investigated at room temperature. The Yb3+:Ba3Gd(BO3)3 crystal exhibits broad absorption at 976nm with FWHM of 7nm and large overall spitting of 2F7/2 manifold (823cm-1). The absorption and emission cross sections are 5.09×10-21cm2 at 976nm and 0.97×10-21cm2 at 1040nm,respectively. The fluorescence lifetime is 2.84 ms.