离化团簇束法制备c轴取向的ZnO薄膜

为了探索低温可调控ZnO薄膜沉积技术,提出了一种新的ZnO薄膜制备方法,即离化团簇束（ICB）法,并自行设计研制了应用该方法制备ZnO薄膜的专门装置.采用超音速喷嘴获得高速锌原子团簇束,用Hall等离子体源产生氧离子束离化锌原子团簇,获得了较高的离化率.在沉积过程中,可以通过调节衬底偏压、氩氧比、衬底加热温度等参数,来控制成膜的质量;应用这个装置成功地在硅衬底上制备的ZnO薄膜,经XRD和EDS检测,薄膜的c轴取向一致,Zn、O原子百分比接近于1：1,成膜质量好.     

Investigation on hexamethyldisilazane vapor treatment of plasma-damaged nanoporous organosilicate films

Hexamethyldisilazane (HMDS) vapor treatment of plasma-damaged nanoporous organosilicate thin films has been studied as a function of treatment temperature in this work. Although, the HMDS vapor treatment facilitated incorporation of methyl (CH₃) groups subsequent to the removal of free hydroxyl (OH) groups in the damaged films at treatment temperature as low as 55 °C, the bonded OH groups were not removed. More significantly, detailed analysis of the results reveals that HMDS vapor modified only the surface of the plasma-damaged samples and not the entire film as expected. This is attributed to the formation of a thin solid layer on the surface, which effectively prevents penetration of HMDS vapors into the bulk. The Fourier transform-infrared (FT-IR) absorption and dielectric constant measurements confirm that the vapor treatment assists only partial curing of the plasma-damaged films. Alternative processes of curing the films with HMDS dissolved in supercritical carbon dioxide (SCCO₂) as a medium of reaction in static and pulsed modes were also attempted and the results are presented in this paper.     

Phosphonate electrochemical recognition by molecularly imprinted deposited film

In this paper, thin films of titanium oxide imprinted with O,O-dimethyl-(2,4-dichlorophenoxyacetoxyl)(3′-nitrobenyl) methinephosphonate (Phi-NO₂) were prepared via liquid phase deposition (LPD) method on a glassy carbon electrode. The imprinted molecular in the films was removed by treatment with immersion in CH₂Cl₂. X-ray diffraction (XRD) and electrochemical methods were introduced to show the evidence of the molecular imprinting phenomenon. It was also found that the recognition ability of the sensor depended on the substituents associated with tridimensional structures of the nitro-compounds. Under the optimized condition, the sensor showed better sensitivity, selectivity and reproducibility to the imprinted molecule and the linear relationship between the current and the concentration of analyte in the range of 0.1-50 μM was obtained. LPD proved to be a powerful method for imprinting titanium oxide thin sense films.     

Effects of oblique-incidence evaporation on magnetic properties of Fe20Ni80/Fe70Co30 bilayer film

Evaporative deposition at oblique incidence is shown to enhance the magnetic anisotropy of an Fe₂₀Ni₈₀ magnetic film and induce magnetic anisotropy in an overlying, strongly isotropic Fe₇₀Co₃₀ film. This deposition method for the formation of an underlayer of several lattice parameters in thickness and semi-hard overlayer of a few thousands Angstroms in thickness achieves a significant change in the magnetization process and strong suppression of the coercive forces of Fe₇₀Co₃₀ in the hard magnetization direction. Soft magnetization of the Fe₇₀Co₃₀ overlayer is not achieved when one of the layers is deposited at oblique incidence. It is anticipated that shape magnetic anisotropy is responsible in part for the magnetic anisotropy induced in both in Fe₂₀Ni₈₀ under- and Fe₇₀Co₃₀ overlayer by oblique incidence evaporation.     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

An Extension Landau-Lifshitz Model in Studying Soft Ferromagnetic Films

In this paper, we propose a model in studying soft ferromagnetic films, which is readily accessible experimentally. By using penalty approximation and compensated compactness, we prove that the dynamical equation in thin film has a local weak solution. Moreover, the corresponding linear equation is also dealt with in great detail.     

用锌有机源和CO2/H2混合气源PECVD沉积ZnO薄膜

在等离子体作用下,以CO2/H2混合气为氧源,Zn(C2H5)2锌为锌源,在单晶硅上生长出高度择优取向的氧化锌薄膜。X射线衍射分析表明,薄膜为六方结构,c轴高度择优;原子力显微镜观察到晶粒是有规律地按六方排布,薄膜的表面粗糙度较小;从光致发光谱还发现在380 nm处有非常强的紫外峰。     

Cathodoluminescence study of extended defects in hydrothermal ZnO crystals

Understanding the luminescence of ZnO is very important for some applications. In spite of the many studies carried out, there are still some points concerning the origin of some of the luminescence emissions in ZnO crystals that require additional study; in particular, the role of extended defects remains to be a matter of controversy. We present here a cathodoluminescence analysis of the defects generated by Vickers indentation in hydrothermal HTT crystals. Special emphasis was paid to the luminescence band peaking around 3.3 eV. The origin of this band is a matter of controversy, since it has been related to different causes, extended defects being one of the candidates for this emission. The CL images were acquired around crystal defects. It is observed that the 3.3 eV emission is enhanced around the crystal defects; though it is also observed, but weaker, out of the defect regions, which suggests that there exist two luminescence emissions peaking very close to 3.3 eV. The two emissions, one related to structural defects and the other to the LO phonon replica of the free excitonic band, appear very close each other and their relative intensity should determine the shape of the spectrum.     

500.8 nmNd∶YAG青光激光器光学薄膜的设计与制备

从双波长激光运转及和频的机理出发，对LD泵浦Nd∶YAG，LBO腔内和频500.8 nm〖JP2〗青光激光器所使用的光学薄膜进行了设计和制备.在激光反射镜的设计上，为了达到最佳的和频输出，对膜系要求进行了深入分析.采用对谐振腔一端面反射率固定不变并通过对另一腔镜基频光的透射率进行调谐的方法, 在给出合理初始结构后，利用计算机对膜厚进行了优化.并采用双离子束溅射沉积的方法，通过时间监控膜厚法成功制备出青光激光器所使用的全介质激光反射膜, 在室温下实现946 nm和1064 nm双波长连续运转，并通过Ⅰ类临界相位匹配LBO晶体腔内和频在国内首次实现500.8 nm青色激光连续输出.当泵浦注入功率为1.4 W时和频青光最大输出达20 mW.     

p型未掺杂富锌ZnO薄膜的形成和性能研究

以高纯ZnO为靶材,氩气为溅射气体,利用射频磁控溅射技术在石英衬底上生长出纤锌矿结构的富锌ZnO薄膜.薄膜沿(002)择优取向生长,厚约为1.2μm,呈现电绝缘特性.将溅射的ZnO薄膜在10-3Pa,510~1 000 K的温度范围等温退火1 h,室温Hall测量结果表明ZnO薄膜的导电性能经历了由绝缘—n型—p型—n型半导体的变化.XPS测试表明ZnO薄膜的Zn/O离子比随退火温度的升高而降低,但一直是富锌ZnO,说明未掺杂的富锌ZnO也可以形成p型导电.p型未掺杂富锌ZnO薄膜的形成可归因于VZn受主浓度可以克服VO和Zni本征施主的补偿效应.