（Ti,Al）N薄膜光学性能的研究

研究了（Ｔｉ，Ａｌ）薄膜的光学特性，对其反射和透射光谱作了仔细分析。运用Ｈａｄｌｅｙ方程，算出一定成分（Ｔｉ，Ａｌ）Ｎ膜的折射率ｎ，消光系数ｋ随波长的变化关系。又根据透射曲线，计算出了（Ｔｉ，Ａｌ）Ｎ膜的光隙能。     

电感耦合等离子体-原子发射光谱法测定红景天中锌、铁、锰和钛

用电感耦合等离子体-原子发射光谱法测定红景天中锌、铁、锰和钛等元素。使用与分析样品基体相接近的标准样品和控制一致的测定条件,克服了物理干扰和基体效应的影响,选择波长为233.0,273.9,257.6,334.9nm4条谱线分别作为测定锌、铁、锰和钛的分析线,测得4种元素的检出限(3s)为0.004—0.05μg/mL。本法测定红景天中4种金属元素的含量,相对标准偏差(n=7)在2.2%—4.2%之间,加标回收率在96.4%—115.2%之间。     

强流辐照钛合金表面特征的原子力显微研究

利用原子力显微术的轻敲模式(TM-AFM),并采用形貌与相位同时成像技术对强流脉冲离子束(IPIB)辐照前后试样表面进行了系统标征,得到了试样表面的高度像及相位像的衬度.分析结果表明:在高流强密度、多次脉冲条件下,IPIB辐照可使试样表面变得光滑化,从相位像中可以定性分析出辐照后表面硬度也得到一定程度的提高.     

Structure evolution and stoichiometry control of Pb(Zr, Ti)O3 thick films fabricated by electrospray assisted vapour deposition

Well-crystallized and stoichiometric Pb(Zr, Ti)O₃ (PZT) films, typically ∼5 μm thick, with pure perovskite-type rhombohedral structures have been successfully prepared via an electrospray assisted vapour deposition (ESAVD) method. Control of the deposition temperature within a narrow range of 300-400 °C resulted in films with the most desirable phases. PZT films with close stoichiometric match with the expected composition ratio and uniform element distribution were obtained by adding the appropriate levels of excess Pb in the precursor solutions. The annealed films were uniform, dense, compact and adherent to the substrates. The dielectric constant, ?_r, and loss tangent, tan δ, of the fabricated PZT films measured at 10 kHz were 442 and 0.09, respectively. The ESAVD deposited PZT films showed a remanent polarization, P_r, of 15.3 μC/cm² and coercive field, E_c, of 86.7 kV/cm. These results demonstrate the clear potential of the ESAVD method as a promising technique for the fabrication of thick PZT films.     

Laser gas-assisted processing of carbon coated and TiC embedded Ti-6Al-4V alloy surface

Laser gas-assisted treatment of Ti-6Al-4V alloy surface is carried out. The alloy surface is initially coated by a carbon layer, in which the TiC particles are embedded prior to laser processing of the surface. The carbon coating with the presence of TiC particles on the workpiece surface is expected to result in carbonitride compound in the surface vicinity after the laser treatment process. Optical and scanning electron microscopes are used to examine the morphological and the metallurgical changes in the laser treated layer. The residual stress formed in the surface region after the laser treatment process is critical for the practical applications of the resulting surface. Therefore, the residual stress formed in the laser treated region is predicted from the analytically equation. The X-ray diffraction technique is incorporated to obtain the residual stress formed in the surface region. It is found that the residual stress predicted agrees with the X-ray diffraction data. The dense structures consisting of TiC_xN_1−x, TiN_x, Ti₂N, and TiC compounds are formed in the surface region of the treated layer. This, in turn, significantly increases the microhardness at the surface.     

CaCu3Ti4O12 陶瓷介电模量响应特性的研究

由于CaCu₃Ti₄O₁₂巨介电常数陶瓷的低频区直流电导较大, 本文采用模量 M"-f频谱表征与分析了低频和高频的两个松弛极化过程. 研究认为, 这两个特征峰属于晶界区Schottky 势垒耗尽层边缘深陷阱的电子松弛过程, 其中高频松弛峰起源于晶粒本征缺陷的电子松弛过程, 而低频松弛峰则为与氧空位有关的松弛极化过程. 对于CaCu₃Ti₄O₁₂这类低频下具有高直流电导的陶瓷材料, 采用模量频谱能更有效地分析研究其损耗极化机理. 关键词： 3Ti₄O₁₂陶瓷')" href="#">CaCu₃Ti₄O₁₂陶瓷 模量 松弛过程 电导     

On the absence of shear cracking and grain boundary cavitation in secondary tensile regions of Ti–6Al–4V–0.1B alloy during hot (α + β)-compression

Deformation instabilities, such as shear cracking and grain boundary cavitation, which are observed in the secondary tensile region of Ti–6Al–4V alloy during compressive deformation in the (α?+?β)-phase field, do not form in Ti–6Al–4V–0.1B alloy when processed under the same conditions. This has been attributed to the microstructural modifications, e.g. the absence of grain boundary α and adjacent grain boundary retained β layers and a lower proportion of 90^o-misoriented α-colonies that occur with boron addition.     

Semi-Analytical Simulation of Titanium-Indiffused Lithium Niobate–Integrated Optic Directional Couplers Consisting of Curved Waveguides

Integrated optic directional couplers consisting of curved waveguides are simulated analytically by solving the Riccati equation. The coupling coefficient between the curved waveguides with a parabolically varying gap and the condition of total power transfer between the waveguides are derived. In order to compute the overall coupling coefficient and hence the power distribution along the waveguides for Ti:LiNbO ₃ curved waveguide directional couplers, the coupling coefficient for straight waveguide couplers is computed for different gaps using the effective-index-based matrix method (EIMM). Finally, the power distribution in the curved waveguides along the length is computed. The method is mostly analytical except the effective-index method and is computationally simple.     

Effect of deposition power and pressure on rate deposition and resistivity of titanium thin films grown by DC magnetron sputtering

ABSTRACT

Based on magnetron sputtering deposition technology, titanium (Ti) thin films are deposited on silicon (Si) substrate using different preparation conditions such as sputtering power and pressure. The influence of altering these conditions on deposition rate and microstructure is studied. The results show that sputtering power significantly affects the rate of deposition and the resistivity. The deposition rate of the Ti thin film increases when the resistivity decreases under sputtering powers of 150–225?W with a pressure of 0.8?Pa and Argon (Ar) flux of 80 sccm. As sputtering power was increased further (from 225 to 250?W), the deposition rate reduced and the resistivity augmented. Pressure also has influence on the deposition rate and resistivity – when pressure increases from 0.6 to 0.8?Pa, the deposition rate escalates while the resistivity reduces; when the pressure is raised from 0.8 to 1.0?Pa with Ar flux of 100 sccm, the deposition rate decreases and resistivity increases. The surface chemical compositions and the structures of the Ti film were studied by using X-ray photoelectron spectroscopy (XPS) and X-ray diffractometer (XRD). Observing the cross-section of the thin-film samples produced by scanning electron microscope (SEM) reveals the influence of the preparation conditions used on the microstructure and confirms the influence of sputtering power and pressure on the resistivity.