Surface roughness influence on the pull-in voltage of microswitches in presence of thermal and quantum vacuum fluctuations

In this work we investigate the influence of the combined effect from random self-affine roughness, finite conductivity, and finite temperature on the pull-in voltage in microswitches influenced by thermal and quantum vacuum fluctuations through the Casimir force and electrostatic forces. It is shown that for separations within the micron or sub-micron range the roughness influence plays a dominant role, while temperature starts to show its influence well above micron separations. Indeed, increasing the temperature leads to higher pull-in voltages since it leads to an increased Casimir force. The temperature influence is more significant for relatively large roughness exponent H ∼ 1, while its influence is significantly lower with increasing lateral roughness correlation length ξ or due to long wavelength surface smoothness.     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

Highly resolved scanning tunneling microscopy study of Si(0 0 1) surfaces flattened in aqueous environment

A surface preparation method with fine SiO₂ particles in water is developed to flatten Si(0 0 1) surfaces on the nanometer scale. The flattening performance of Si(0 0 1) surfaces after the surface preparation method is investigated by scanning tunneling microscopy. The observed surface is so flat that 95% of the view area (100 × 100 nm²) is composed of only three atomic layers, namely, one dominant layer occupying 50% of the entire area and two adjacent layers. Furthermore, a magnified image shows the outermost Si atoms regularly distributed along the 〈1 1 0〉 direction on terraces.     

Growth of epitaxial thin Pd(1 1 1) films on Pt(1 1 1) and oxygen-terminated FeO(1 1 1) surfaces

Thin Pd films (1-10 monolayers, ML) were deposited at 35 K on a Pt(1 1 1) single crystal and on an oxygen-terminated FeO(1 1 1) monolayer supported on Pt(1 1 1). Low energy electron diffraction, Auger electron spectroscopy, and Kr and CO temperature programmed desorption techniques were used to investigate the annealing induced changes in the film surface morphology. For growth on Pt(1 1 1), the films order upon annealing to 500 K and form epitaxial Pd(1 1 1). Further annealing above 900 K results in Pd diffusion into the Pt(1 1 1) bulk and Pt-Pd alloy formation. Chemisorption of CO shows that even the first ordered monolayer of Pd on Pt(1 1 1) has adsorption properties identical to bulk Pd(1 1 1). Similar experiments conducted on FeO(1 1 1) indicate that 500 K annealing of a 10 ML thick Pd deposit also yields ordered Pd(1 1 1). In contrast, annealing of 1 and 3 ML thick Pd films did not result in formation of continuous Pd(1 1 1). We speculate that for these thinner films Pd diffuses underneath the FeO(1 1 1).     

Analysis of 17β-Estadiol from Sewage in Coastal Marine Environment by Surface Plasmon Resonance Technique

In this study, surface plasmon resonance(SPR) for monitoring 17β-eatradiol( E2 ) was developed. The small molecule E2 was immobilized on a CM5 sensor chip for an indirect competitive immunoassay to detect F2. The SPR response based on the antigen-antibody reaction was measured by injecting the sample solution into the flow system.The limitation of detection was 0.445 μg/L. The developed SPE-SPR system was applied to analyze the seawater samples. Recovery of E2 was 91.6%-93.1%. Relative standard deviations(RSD) for the E2 assay were between 10.9%-15.1% ( n = 3). The range of determination of E2 samples from the sewage in the coastal marine environment was between ND(lower than detection limit) and ca. 11.78 ng/L.     

Surface site dependence to negative ion formation

The processes of electron transfer and dissociative scattering are explored for collisions of hyperthermal NO⁺ on GaAs(110). The experiments reveal a marked angular dependence to O⁻ emergence. A strong correlation between the O⁻ scattering angle and the final atom-surface interaction site provides a map of the lateral dependence to reactivity. The results are modeled by sequential neutralization, dissociation, and electron attachment steps. Classical trajectory calculations, in conjunction with an empirical opacity function, accurately reproduce the experimental results. The opacity function is interpreted as the probability that an electron will attach to a departing O fragment as a function of the last surface site the atom impacts. The experiments indicate that O⁻ emergence occurs predominantly for oxygen atoms which come in close contact with the localized dangling bond states of GaAs(110).     

多孔硅在30~180℃温区光致发光谱的研究

对长期存放在空气中的多孔硅样品和即时制备的多孔硅样品分别在室温~180℃下进行了光致发光（PL）温度效应的研究.两类样品的PL呈现不同的变化规律.前者的PL还表现为双峰,且长波PL峰随温度升高蓝移;后者的PL表现为单峰,且PL峰位随温度升高红移.基于量子限制效应对后者进行了解释;而前者难以用分立的量子限制和表面发光中心模型来解释,实验结果表明两种机制之间可能有较复杂的耦合效应发生.     

Surface core level shift observed on NiAl(1 1 0)

Using high resolution core level spectroscopy, a surface core level shift towards lower binding energy of −0.13 eV is determined for the 2p level of the outwardly relaxed Al surface atoms on NiAl(1 1 0). Density functional theory based calculations with inclusion of final state effects yield a value of −0.14 eV for this shift in excellent agreement with experiment. We show that the initial state approximation yields a value of +0.09 eV, i.e. the inclusion of final state relaxation effects is vital not only to obtain the correct value but even the correct sign for this shift.     

Effects of substrate treatment on the electroluminescence performance of flexible OLEDs

Electroluminescence (EL) performance of flexible organic light-emitting device (FOLED) has been found to be highly dependent upon the morphology of the surface of the indium thin oxide (ITO)/plastic substrate as well as the patterning and processing conditions of the substrate. We will present evidence showing that luminance efficiency of FOLED can be greatly improved by pretreatment. Surface analysis of the ITO/PET by means of atomic force microscope (AFM) and optical microscope will be compared with that of the ITO/glass and the influence of flexible OLEDs substrate treatment by various methods on EL performance will also be discussed.