|
|||||
|
|
| 多孔硅在30~180℃温区光致发光谱的研究 | |
| 引用本文： | 兰燕娜,杜银霄,朱会丽,董华,高影,莫育俊.多孔硅在30~180℃温区光致发光谱的研究[J].光子学报,2004,33(12):1461-1464. |
| 作者姓名： | 兰燕娜 杜银霄 朱会丽 董华 高影 莫育俊 |
| 作者单位： | 1. 河南大学物理与信息光电子学院,开封,475001;南通工学院基础部,江苏省,南通,226007 2. 河南大学物理与信息光电子学院,开封,475001 |
| 基金项目： | 国家自然科学基金(批准号:10274019)，河南省自然科学基金(批准号:0211010100)资助 |
| 摘 要： | 对长期存放在空气中的多孔硅样品和即时制备的多孔硅样品分别在室温~180℃下进行了光致发光（PL）温度效应的研究.两类样品的PL呈现不同的变化规律.前者的PL还表现为双峰,且长波PL峰随温度升高蓝移;后者的PL表现为单峰,且PL峰位随温度升高红移.基于量子限制效应对后者进行了解释;而前者难以用分立的量子限制和表面发光中心模型来解释,实验结果表明两种机制之间可能有较复杂的耦合效应发生. |
| 关 键 词： | 多孔硅 光致发光 双峰 量子限制 表面发光中心 |
| 收稿时间： | 2004-01-07 |
| 修稿时间： | 2004年1月7日 |
Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃ |
|
.Study on the Temperature Dependence of Photoluminescence Peaks of Porous Silicon from 30 to 180℃[J].Acta Photonica Sinica,2004,33(12):1461-1464. |
|
| Authors: | |
| Institution: | (1 College of Physics and Information Optic-electronics, Henan University, Kaifeng 475001) (2 Nantong Institute of Technology,Nantong 226007) |
| Abstract: | The temperature dependence of PL for two kinds of porous silicon (PS) from 30℃ to 180℃ were investigated. The PS sample with a long time storage in the atmosphere showed two-peak PL and the low energy PL peak had a blue shift with the increasing of the temperature (T), but the position of the high-energy PL peak remained constant with T. The fresh PS sample just had a single PL peak and the peak had a red shift as temperature increasing. This red shift of the PL peak could be explained with the quantum confinement effect. But the former one (two peaks) could not be explained by the independent models of the quantum confinement and the surface luminescence center. Our experimental results showed that there is a rather complicated couple between those two mechanisms. |
| Keywords: | Porous silicon Photoluminescence (PL) Two-peak Quantum confinement Surface luminescence center |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |
| 点击此处可从《光子学报》浏览原始摘要信息 | |
| 点击此处可从《光子学报》下载免费的PDF全文 | |