安装偏差对光纤布喇格光栅应变测量的影响

通过理论推导和试验分析研究了安装偏差对光纤应变测量的影响，得到安装误差所带来测量误差的计算公式.发现光纤的轴向与预定安装方向的角偏差越大，测量误差也越大.用光纤光栅进行应变测量时，必须考虑光纤的安装偏差，它直接关系到测量结果的准确性.实际测量中要尽量确保传感器安装方位的准确.     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

双涂层光纤应变传感器的理论与实验研究

对带有聚合物涂敷层和缓冲层的光纤应变传感器的力学特性进行了研究，建立了双涂层光纤与基体材料相互作用的线弹性理论模型.理论研究表明：在小半径近似条件下，双涂层光纤的力学传递特性决定于涂覆层和缓冲层的弹性模量的相对值；当缓冲层的弹性模量远大于涂覆层时，其作用可忽略.实验中，将光纤传感器埋入基体材料内部，利用白光干涉应变测量方法，对平均应变传递系数进行了实验研究.实验结果与理论仿真具有较好的一致性.     

Exciton energy broadening due to interface fluctuations in ZnSe/ZnSxSe1−x strained quantum wells

The excitonic properties of a ZnSe/ZnS_xSe_1−x strained quantum well (QW) are calculated taking into account interface effects. Numerical results obtained with ZnS_0.18Se_0.82/ZnSe QWs show that graded interfaces can be responsible for a strong broadening of excitonic spectra.     

Performance evaluation of fiber Bragg grating sensors by digital holographic technique, strain gauge measurement

In view of the growing interest for non-destructive tests of materials, geodynamical monitoring and in general remote sensing, there is a great effort to bring practical optical sensors from research labs to industrial and environmental applications. In this paper, we employ digital holographic technique as an efficient tool for evaluating the strain measurement capability of fiber Bragg gratings (FBG). A cantilever beam has been employed as a test structure under loading test. The strain measurements results obtained by fiber-based sensors have been compared to those obtained by using full-field digital holographic technique and point-wise strain gauge sensors glued on the same cantilever beam. A simple theoretical model is also presented to interpret and compare the experimental results coming from different techniques.     

Error estimation,adaptivity and data transfer in enriched plasticity continua to analysis of shear band localization

In this paper, an adaptive FE analysis is presented based on error estimation, adaptive mesh refinement and data transfer for enriched plasticity continua in the modelling of strain localization. As the classical continuum models suffer from pathological mesh-dependence in the strain softening models, the governing equations are regularized by adding rotational degrees-of-freedom to the conventional degrees-of-freedom. Adaptive strategy using element elongation is applied to compute the distribution of required element size using the estimated error distribution. Once a new mesh is generated, state variables and history-dependent variables are mapped from the old finite element mesh to the new one. In order to transfer the history-dependent variables from the old to new mesh, the values of internal variables available at Gauss point are first projected at nodes of old mesh, then the values of the old nodes are transferred to the nodes of new mesh and finally, the values at Gauss points of new elements are determined with respect to nodal values of the new mesh. Finally, the efficiency of the proposed model and computational algorithms is demonstrated by several numerical examples.     

Focused ion beam Moiré method

A focused ion beam (FIB) Moiré method is proposed to measure the in-plane deformation of object in a micrometer scale. The FIB Moiré is generated by the interference between a prepared specimen grating and FIB raster scan lines. The principle of the FIB Moiré is described. The sensitivity and accuracy of deformation measurement are discussed in detail. Several specimen gratings with 0.14 and 0.20 μm spacing are used to generate FIB Moiré patterns. The FIB Moiré method is successfully used to measure the residual deformation in a micro-electro-mechanical system structure after removing the SiO₂ sacrificial layer with a 5000 lines/mm grating. The results demonstrate the feasibility of this method.     

Influence of strain on the magneto-exciton in single and coupled InP/GaInP quantum disks

We investigated theoretically the influence of strain on the exciton in both single and three vertically coupled self-assembled quantum dot systems in the presence of a perpendicular magnetic field. For the single disk, we find that the heavy-hole exciton is the ground state, while for the system of three stacked disks, the light hole state was found to be lower in energy. Results for the diamagnetic shift were compared with experimental results.     

荧光光纤光栅传感特性的实验研究

在载氢掺铒光纤上写入Bragg光纤光栅，得到新型光子学器件-荧光光纤光栅.分别对其Bragg波长（λB）及荧光寿命（τ）的温度（T）及应变（ε）响应特性进行了实验研究，并且给出了λB和τ分别关于（T，ε）的拟合方程.实验结果表明：荧光光纤光栅的λB对T和ε的响应具备一般Bragg光纤光栅的优良特性，测得温度灵敏度为11.1pm /℃，应变灵敏度为1.19pm/με；而且τ对T和ε的响应也具有良好的线性关系，温度灵敏度为0.59 μs/℃，应变灵敏度为6.16 ns/με.实验结论为解决温度应力交叉敏感、实现温度应力的同时监测提供一条新颖的途径.     

Strongly confined quantum wire states in strained T-shaped GaAs/InAlAs structures

The confinement energy of T-shaped quantum wires (QWRs), which were fabricated by the cleaved edge overgrowth technique in a way that the QWRs form at the intersection of In_0.2Al_0.8As stressor layers and the overgrown (1 1 0) GaAs quantum well (QW), is examined using micro-photoluminescence spectroscopy. Photoluminescence (PL) signals from individual QWRs can be spatially resolved, since the strained films are separated by 1 μm wide Al_0.3Ga_0.7As layers. We find that due to the tensile strain being transmitted to the QW, the confinement energy of the QWRs rises systematically up to 40 meV with increasing thickness of the stressor layers. By reducing the excitation power to 0.1 μW the QWR PL emission occurs 48 meV redshifted with respect to the QW. All QWR peaks exhibit smooth lineshapes, indicating the absence of pronounced exciton localization.