Highly nonlinear chalcogenide glass micro/nanofiber devices: Design, theory, and octave-spanning spectral generation

In this review we consider the basic elements of tapering chalcogenide optical fibers for the generation of extreme spectral broadening through supercontinuum generation. Creating tapered nanofiber devices in chalcogenide fiber, which has an intrinsic nonlinearity that is two orders of magnitude higher than silica, has resulted in the demonstration of octave-spanning spectra using record low power. We first present a brief theoretical understanding of the tapering process that follows from the basic principle of mass conservation, and a geometric construction tool for the visualization of the shape of tapered fibers. This is followed by a theoretical treatment of dispersion engineering and supercontinuum generation in a chalcogenide nanofiber. In the final section, we cover the experimental implementation of the chalcogenide nanofiber and demonstrate an octave-spanning spectrum created with 150 W of peak power.     

高精度星模拟器目标标准源设计

为满足高精度光学导航敏感器地面标定要求,针对传统标定用目标标准源技术特点,给出了一种基于有机电致发光器件(OLED)光源与光纤光导技术相结合的高精度目标标准源设计方法。分析设计方案并给出了目标标准源的整体结构;同时为提高OLED与光纤耦合效率,详细设计了标准目标源的光纤光源耦合机构以及光纤入/出射板的结构;为满足5～10等星的精确控制,对光耦合机构的自聚焦透镜和星等输出模拟系统中的滤光片进行了详细设计,并对自聚焦透镜进行了参数优化。对目标标准源的主要参数星等和星点间距精度进行的理论分析和实际测试表明所设计目标标准源达到了高精度星敏感器标定需要。     

太阳能槽式系统反射镜玻璃厚度对聚光特性的影响

针对太阳能槽式系统反射镜玻璃厚度对聚光特性的影响进行了理论、模拟和实验研究。研究结果表明,平行光下反射镜玻璃越厚,入射光线距光轴距离越远,ΔX、ΔY越大。对焦距为1200 mm,反射镜玻璃折射率为1.6的槽式系统进行了理论计算,玻璃厚度为1 mm的反射镜,当距光轴距离为200 mm和2000 mm时,ΔX为0.03 mm和1.69 mm,ΔY为0.19 mm和0.31 mm;当距光轴距离仍为2000 mm时,玻璃厚度为5 mm的反射镜,ΔX为8.41 mm,ΔY为1.55 mm。通过TracePro模拟以及实际实验测量,结果与理论计算相符。     

纳米半球微镜阵列结构对GaN基LED光提取效率的影响

为了分析表面纳米半球微镜结构对GaN基发光二极管（LED)光提取效率的影响,利用时域有限差分法(FDTD)分别对GaN、ZnO、SiO2、聚苯乙烯组成的半球微镜结构进行了分析和比较,同时用模式分析方法从理论上对FDTD计算结果进行了进一步验证。研究发现,在亚波长范围,折射率较小的材料不利于导模与表面结构层的耦合,不会对光提取效率的提高产生明显影响。相比之下,折射率较大的材料会使更多的模式耦合到半球微镜阵列层,更有利于光提取效率的提高;当材料选定,纳米半球半径增加时,光提取效率也逐渐增加,优化后半径为600 nm的半球微镜阵列结构GaN基LED,其光提取效率比没有结构的普通平板LED增强5.66倍,在以上波导材料结构中最为优化。在此基础上,通过等效折射率的计算得到半球微镜结构的等效折射率模型,并利用非对称平板模式分析的办法对以上得到的结论进行了分析和验证。这些结果对实际的高性能GaN基LED的设计与优化具有重要意义。     

高显色白光LED的制备及其变温特性

分别用黄色、红色荧光粉和黄色、红色、绿色荧光粉制备了两种高显色指数白光发光二极管(LED),调整荧光粉的比例使显色指数达到最高。对两种样品进行光学测试,发现加绿粉的样品光通量比较大,这是因为加绿粉后绿光成分较多,而绿光的视效函数比红光的大得多。对两种样品进行10℃～90℃的变温测试,发现发光效率都降低,显色指数反而升高。发光效率降低一方面是由芯片的内量子效率降低引起的,另一方面是芯片的发射波长红移使其与荧光粉的激发波长不匹配,并且荧光粉在升温时激发效率会降低。显色指数升高是因为高温时芯片发出的蓝光光谱变宽,使得整个光谱相对于室温时的光谱更平滑,更接近太阳光谱。     

交流发光二极管热特性的模拟分析

由于交流发光二极管(AC-LED)在实际应用中无需交流/直流整流变压器,它的发展越来越被关注。随着器件功率的增大,芯片结温升高,对器件的光通量、光功率及寿命等产生负面影响,所以精确掌握AC-LED的温升规律就成为芯片设计的关键。运用FloEFD有限元软件进行模拟仿真1 W白光AC-LED分别在直流和交变功率驱动下的瞬态热特性,结果表明在加载交变信号情况下,器件结温会以直流信号的结温为中心周期振荡,振荡的频率与输入功率频率相同,但有明显的相位移动。同时,AC-LED在不同的输入功率和频率下的结温变化显示稳态时的平均结温和结温振荡幅度都随功率的增大而线性上升,但随着频率的增大而降低。     

Coupling strength effect on shot noise in boron devices

The shot noise properties in boron devices are investigated with a tight-binding model and the non-equilibrium Green’s function.It is found that the shot noise and Fano factors can be tuned by changing the structures,the size,and the coupling strength.The shot noise is suppressed momentarily as we switch on the bias voltage,and the electron correlation is significant.The Fano factors are more sensitive to the ribbon width than to the ribbon length in the full coupling context.In the weak-coupling context,the Fano factors are almost invariant with the increase of length and width over a wide bias range.     

不同掺杂顺序的磷光OLED器件发光性能的研究

绿色GIr1和红色R-4B磷光染料,采用红绿红、绿红、红绿、绿红绿等顺序,与主体材料CBP共蒸,制备了四种红绿磷光器件,并结合TCTA和BCP对载流子和激子的阻挡作用,研究了发光层掺杂顺序对器件性能的影响。结果表明,四种器件光谱、光效、亮度和发光颜色均有较大差异,且BCP和CBP界面附近是主要的激子复合区。在电压为5v,红绿红掺杂型器件,亮度、电流效率和色坐标分别为40.12 cd·m-2,7.68 cd·A-1 和(0.630 1,0.365 4);而绿红绿掺杂型器件为104 cd·m-2,19.75cd·A-1和(0.371 7,0.576 8)。分析认为：CBP与GIr1,R-4B,BCP,TCTA有较大的LUMO能级差异,发光层中电子的主要传输方式为掺杂分子上的俘获和分子间跳跃,不同掺杂顺序会形成不同能级势垒分布,发光层内电荷累积形成的空间电场分布不同。     

APPLICATION AND THEORETICAL ANALYSIS OF C/SiC COMPOSITES BASED ON CONTINUUM DAMAGE MECHANICS

Based on the thermodynamic theory, an orthotropic damage constitutive model was developed to describe the nonlinear mechanical behavior of C/SiC composites. The different nonlinear kinematic and isotropic hardening functions were adopted to describe accurately the damage evolution processes. The damage variables were defined with the damaged modulus and the initial undamaged modulus on energy equivalence principle. The initial orthotropy and damage coupling were presented in the damage yield function. Tensile and in-plane shear loading and unloading tests were performed, and a good agreement between the model and the experimental results was achieved.     

Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates

Graphene with different surface morphologies were fabricated on 8° -off-axis and on-axis 4H-SiC(0001) substrates by high-temperature thermal decompositions. Graphene grown on Si-terminated 8° -off-axis 4H-SiC(0001) shows lower Hall mobility than the counterpart of on-axis SiC substrates. The terrace width is not responsible for the different electron mobility of graphene grown on different substrates, as the terrace width is much larger than the mean free path of the electrons. The electron mobility of graphene remains unchanged with an increasing terrace width on Siterminated on-axis SiC. Interface scattering and short-range scattering are the main factors affecting the mobility of epitaxial graphene. After the optimization of the growth process, the Hall mobility of the graphene reaches 1770 cm 2 /V·s at a carrier density of 9.8.×10 12 cm 2 . Wafer-size graphene was successfully achieved with an excellent double-layer thickness uniformity of 89.7% on a 3-inch SiC substrate.