圆形振动膜ZnO压电微传声器的研制

本文介绍了一种新型圆形振动膜ZnO压电微传声器的制备，并对传声器制备的工艺过程进行了较为详细的描述。圆形振动膜的压电传卢器与以前方形振动膜结构设计相比，较大幅度提高了传声器的灵敏度和成品率，灵敏度达到-70dB（相对于1V／Pa），成品率达到80％。     

波导调制器的光束传播法设计

以光束传播法分析马赫－陈德尔型波导电光强度调制器的波导宽度，Ｙ型分支角、调制电压等参量与器件特性之间的关系，有利于Ｍ－Ｚ波导电光调制器的优化设计。     

超大规模集成电路波导光互连技术的现状与前景

介绍超大规模集成电路(VLSI)波导(?)互连技术的最新进展,并预测其发展方向,以及如阿解决存在的实际问题。     

Raman Spectra of Proton-Exchanged LiNbO3 Optical Waveguides

Based on the Raman spectrum measurement, we investigate the mechanism of proton exchange, by which the optical waveguides are formed in the LiNbO3 crystal which are proton doped. The proton source is formed by a mixture of benzoic and adipic acids. The experimental results show that there is a Raman formant peak of optical waveguide at 650cm^-1, and the higher the relative percentage of the mol ratio of adipic acid dilution, the higher the intensity of the Raman formant peak.     

硅磷酸铝分子筛SAPO—34稳定性的研究

利用差热分析（ＤＴＡ）、原位ＸＲＤ技术研究了ＳＡＰＯ－３４分子筛原粉样品的晶体结构在模板剂烧除过程以及环境气氛中的变化情况。采用１０７３Ｋ下的高温焙烧和水蒸汽处理以及甲醇转化试验跟踪考察了该分子筛在结构和催化性能上的稳定性。     

反常色散区高阶色散对啁啾演变的影响

在单模光纤反常色散区，首次推出了带有初始啁啾的高斯脉冲在二阶，三阶速度色散效作用产生的啁啾解析表达式，用数值法模拟了光纤中啁啾演变过程，研究结果表明，二阶，三阶色散导致非线性啁啾，三阶色散只在脉冲沿附产生啁啾极值，从而使脉冲在前后沿产生振荡结构，当具有负初始啁呼的高斯脉冲入射时，在脉冲中心小区域内净啁啾等于零，可形成孤子。     

分离变量法与等腰直角三角形波导的边值问题

根据叠加原理，讨论等腰直角三角形波导边值问题的IE波解和TM波解，纠正有关文献中的错误解法，指出分离变量法的适用条件。     

Self-Assembly of Micro-Parts onto Si Substrates at Liquid-Liquid Interface

We report a new approach for the self-assembly of cuboid micro-parts onto Si substrates to construct three-dimensional microstructures. To perform assembly, the Si substrates are prepared with a deep cavity array as binding sites. An aggregate composed of hundreds of uniformly aligned micro-parts is formed at the C10F18-H2O interface. The micro-parts are arranged by passing the substrate through the aggregate of micro-parts, thus the micro-parts are left on the substrate, and then the substrate is vibrated ultrasonically in the solution, making it possible for the micro-parts to fall into the cavities on the substrate. Finally the substrate is pulled out of the solution after assembly. This technique could give a high yield of up to 70%, providing a new method for micro-assembly.     

Reduction of Dislocations in GaN Epilayer Grown on Si （111） Substrates using a GaN Intermedial Layer

GaN intermedial layers grown under different pressures are inserted between GaN epilayers and AIN/Si（111） substrates. In situ optical reflectivity measurements show that a transition from the three-dimensional （3D） mode to the 2I） one occurs during the GaN epilayer growth when a higher growth pressure is used during the preceding GaN intermedial layer growth, and an improvement of the crystalline quality of GaN epilayer will be made. Combining the in situ reflectivity and transmission electron microscopy （TEM） measurements, it is suggested that the lateral growth at the transition of growth mode is favourable for bending of dislocation lines, thus reducing the density of threading dislocations in the epilayer.