Evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistors by structure function method＊

The evaluation of thermal resistance constitution for packaged A1GaN/GaN high electron mobility transistor （HEMT） by structure function method is proposed in this paper. The evaluation is based on the transient heating measurement of the A1GaN/GaN HEMT by pulsed electrical temperature sensitive parameter method. The extracted chip-level and package-level thermal resistances of the packaged multi-finger A1GaN/GaN HEMT with 400μm SiC substrate are 22.5 K/W and 7.2 K/W respectively, which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged A1GaN/GaN HEMTs. It is also experimentally proved that the extraction of the chip- level thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

Theoretical study of photon emission from single quantum dot emitter coupled to surface plasmons

Motivated by the recent pioneering advances on nanoscale plasmonics and also nanophotonics technology based on the surface plasmons (SPs), in this work, we give a master equation model in the Lindblad form and investigate the quantum optical properties of single quantum dot (QD) emitter coupled to the SPs of a metallic nanowire. Our main results demonstrate the QD luminescence results of photon emission show three distinctive regimes depending on the distance between QD and metallic nanowire, which elucidates a crossover passing from being metallic dissipative for much smaller emitter-nanowire distances to surface plasmon (SP) emission for larger separations at the vicinity of plasmonic metallic nanowire. Besides, our results also indicate that, for both the resonant case and the detuning case, through measuring QD emitter luminescence spectra and second-order correlation functions, the information about the QD emitter coupling to the SPs of the dissipative metallic nanowire can be extracted. This theoretical study will serve as an introduction to understanding the nanoplasmonic imaging spectroscopy and pave a new way to realize the quantum information devices.     

A new analytical edge spread function fitting model for modulation transfer function measurement

We propose a new analytical edge spread function (ESF) fitting model to measure the modulation transfer function (MTF).The ESF data obtained from a slanted-edge image are fitted to our model through the non-linear least squares (NLLSQ) method.The differentiation of the ESF yields the line spread function (LSF),the Fourier transform of which gives the profile of two-dimensional MTF.Compared with the previous methods,the MTF estimate determined by our method conforms more closely to the reference.A practical application of our MTF measurement in degraded image restoration also validates the accuracy of our model.     

紧束缚势和修正的嵌入原子势计算液态Sn双体相关函数差异

对500个Sn原子分别用两种模型（紧束缚势和修正的嵌入原子势）计算了400℃~1700℃温度范围内纯Sn的双体相关函数g（r）。将计算结果与实验数据进行了对比分析,发现两种计算结果都能基本上反映液态Sn的结构及其随温度的变化情况：原子最近邻距离与实验结果相近;随着温度降低,双体相关函数第一峰变得尖锐,第二峰变得明朗。修正的嵌入原子势模型得到的双体相关函数的第一峰右侧有个突起的肩膀,这在实验结果中也被发现,而紧束缚势模型得到的双体分布函数肩膀不明显。     

C20分子的一个电子输运模型研究

本文构建了Li链为电极的富勒烯C20分子的电子输运模型, 使用非平衡格林函数方法(Non-equilibrium Green's function, NEGF)对构建的Li电极和C20分子构成的分子器件进行了电子输运性质的计算. 计算得出了电子透射谱和电流电压曲线, 分析了产生这个分子器件电子输运性质的原因. 研究计算结果发现,大部分能量的电子是不会穿过器件的, 即使考虑不同偏压,能穿过器件的电子都集中在几个固定的能量上, 且在这几个固定能量上透过率比较高. 计算得出的伏安曲线说明在偏压为1.925V时电流达到最大, 只有在这个偏压周围才有相对明显的电流.     

辐射传输介质散射相函数的蒙特卡洛算法

复分散系相函数在辐射介质传热中是关键参数,蒙特卡洛法兼具数值算法与试验测量的优点.利用该方法计算复分散系的多重散射相函数克服了以往算法的缺点,可以体现多重散射的影响,并且可以计算任意形状控制体的相函数.大量的数学实验发现当介质系密度增大时,散射能量在4π空间内分布趋于均匀.     

一维受迫谐振子量子运动的经典特性

对经典一维受迫谐振子量子化,求解量子化后体系的时间演化算符.应用相空间准概率分布函数,研究了体系的量子特性.研究结果表明,初始为真空态,经过时间演化,系统波函数是一个二维高斯波包;波包中心的振幅和相位受到作用力的调制,成为调幅、调相波,波包中心的运动与经典受迫谐振子的运动形式相同.     

双模压缩数态光场的Wigner函数及其特性

借助纠缠态表象及Wigner算符在该表象下的表示,得到双模压缩数态的Wigner函数,数值计算画出相空间中Wigner函数的分布图,并加以分析,发现双模压缩数态两模之间相互关联、相互纠缠,对相空间中Wigner函数分布产生影响. 关键词： 双模压缩数态 Wigner函数 纠缠态表象     

水平层状介质中电磁场并矢Green函数的一种快速新算法

本文利用提取直射波并结合自适应数字滤波等技术提出一种计算水平层状介质中电磁场并矢Green函数的快速算法. 首先将谱域Green函数中表征均匀介质作用的直射波提取出来并对其积分进行解析计算,这种处理降低了谱域Green函数的奇异性,可在很大程度上缩短其积分收敛区间. 然后在将谱域Green函数剩余部分对应积分转化为三个快速下降积分的基础上,引入一种自适应数字滤波算法对其进行快速求解. 最后通过具体算例验证了本文所述算法的有效性. 关键词： 并矢Green函数 快速算法 水平层状介质