Organic contaminants removal by oxygen ECR plasma

Recently electron cyclotron resonance (ECR) plasma have been explored for wafer cleaning applications, since it is known to do less damage to silicon surface than conventional plasma. Organic contaminants removal efficiency and plasma radiation damage of the ECR plasma cleaning have been investigated. In oxygen ECR plasma cleaning, the plasma exposure time needed to remove the organic contaminants on the silicon surface down to the detection limit is 40 s, but the one to reach the lowest surface roughness is 10 s. The leakage current level of the MOS capacitor made using the Si substrate exposed to oxygen ECR plasma for 40 s is 8 × 10⁻⁹ A. The optimum exposure time determined by considering the contaminants removal efficiency and the plasma radiation damage (or the leakage current level) is 40 s. Organic contaminants seem to be removed through both sputter-off mechanism by oxygen ion bombardment and evaporation mechanism by chemical reactions with excited oxygen atoms.     

Transient desorption of HD and D2 molecules from the D/Si(1 0 0) surfaces exposed to a modulated H-beam

We have studied the direct and indirect abstraction of D adatoms by H on the Si(1 0 0) surfaces by employing a pulsed H-beam. Desorptions of HD molecules is found to occur promptly as a result of direct abstraction at the beam on-cycles. In contrast, we find that D₂ desorption induced by adsorption of H atoms, i.e., the so-called adsorption-induced desorption (AID), occurs even at the beam off-cycles. The D₂ rate curves measured with the pulsed-H beam are decomposed into four components characterized with the reaction lifetimes of ?0.005, 0.06 ± 0.01, 0.8 ± 0.1, and 30 ± 5 s. We propose that the fastest and the second fastest AID channels are related to the thermodynamical instability of (1 × 1) dihydride domains locally formed on the (3 × 1) monodeuteride/dideuteride domains. The 0.8 s AID channel is attributed to the desorption occurring at the stage when (3 × 1) monodeuteride/dideuteride domains are built up upon H adsorption onto the (2 × 1) monohydride surface. The 30 s AID path is attributed to the thermal desorption accompanied by the shrinkage of the (3 × 1) domains which were excessively formed during the beam on-cycles on the (2 × 1) monohydride surface. Atomistic mechanisms are proposed for these three AID pathways.     

A theoretical study of CH4 dissociation on Pt(1 0 0) surface

Density functional theory calculations have been performed on the adsorption of H and CH₃, and the dissociation of CH₄ on Pt(1 0 0) surface. It was found that H was adsorbed on the top and bridge sites, while CH₃ was adsorbed only on the top site. The coadsorption of methyl and hydrogen which has also been investigated shows that the interaction between the two adsorbates is stabilising. In addition, two distinct pathways were explored, differing by the initial adsorbed state of CH₄. They converge readily to the same transition state corresponding to an activation energy value of 0.53 eV. These results compare favourably with existing data in the literature for Pt(1 1 1) and Pt(1 1 0).     

Nanoporous silicon doped by Cu for gas-sensing applications

The effect of hydrogen sulphide on the current–voltage characteristics of metal–insulator–semiconductor (MIS) structures based on nanoporous silicon (Si_nanopor) under copper doping has been investigated. Scanning electron (SEM), atomic force (AFM) and optic microscopes and/or secondary ion mass spectroscopy (SIMS) were used to obtain detailed characterisation of copper cluster distribution present at the surface and pores, respectively. SIMS spectra reveal that finite gradient in copper distribution along the pores and oxidation of nanoporous silicon simultaneously can be obtained successfully under electroless deposition process. It was also shown that the doping of nanoporous silicon by Cu leads to enhanced hydrogen sulphide sensitivity of MIS structures even without catalytic active top electrodes (for example, Pd) at room temperature. Furthermore, for different types of familiar MIS structures based on nanoporous silicon, e.g., MIS structures doped or undoped by copper and by using Pd metal electrodes, the hydrogen sulphide detection at room temperature mainly depends on the modification in the height of barrier of hetero- (Al–Cu–Si_nanopor–c-Si) or Schottky-like (Pd–Cu–Si_nanopor–c-Si) structures resulting the chemical interaction of molecular H₂S gas with copper clusters at the surface and in the pores. It is demonstrated that MIS structures based on the nanoporous silicon with copper doping are more sensitive to H₂S action at room temperature. In addition, the physical mechanism explaining the observed phenomena is also discussed.     

适用于光突发交换网的可编程光缓存器

提出了两种适用于光突发交换网的可编程光缓存器结构：交叉型和多端口开关型.两种结构都能满足突发包缓存的超长性和可变性的要求，且结构简单紧凑，成本低，可扩展.交叉型缓存器通过指定信号在每个子缓存模块的光纤环中的循环次数即能实现可变时间的延迟.多端口开关型缓存器通过指定信号在两个多端口开关相应端口与所接光纤延迟线组成的光纤环中的循环次数实现可变时间的延迟.仿真结果表明，两种可编程光缓存器都能对光突发包实现ns级指定时间延迟，可用于解决光突发交换网突发包的冲突问题.     

水热法制备p-CoFe_2O_4/n-CdS及其光催化制氢性能

水热法制备了系列p-n复合半导体p-CoFe_2O_4/n-CdS。采用X射线衍射(XRD)、冷场发射扫描电子显微镜(SEM)、紫外-可见漫反射光谱(UV-Vis DRS)、透射电镜(TEM)和电化学工作站等对制得的光催化剂进行了结构和性能表征。研究了p-CoFe_2O_4/n-CdS复合光催化剂的可见光催化制氢性能及光腐蚀性能,并对光催化活性的提高、反应条件的影响及光腐蚀行为的抑制机理进行了分析。结果表明:由于CoFe_2O_4和CdS两种窄带隙半导体复合增加了光吸收率;CdS独特的树形结构以及CoFe_2O_4和CdS二者复合所产生的能带交迭和内建电场的三重作用,促进了电子从CoFe_2O_4向CdS的迁移,减少电子-空穴对复合的概率,增强了光催化活性。光生电子-空穴对的分离效率以及光催化剂表面吸附性能都对产氢速率有重要影响。CH_3OH水溶液的pH对光催化剂中光生电子-空穴对的分离效率以及光催化剂表面吸附性能都有影响。牺牲剂CH_3OH的加入以及CoFe_2O_4和CdS二者复合所产生的能带交迭和内建电场的作用都对CdS的光腐蚀起了抑制作用,后者的抑制效果更好。     

Anodic oxidation of a tetrasubstituted cyclooctatetraene. Multiple carbon-carbon bond cleavage and aromatization

Anodic oxidation of 1,2-,5,6-bis[trimethylene]cyclooctaetraene in methanol affords as the major product a substance formed by a complex sequence of carbon-carbon bond cleavages and concomitant aromatization.     

The Darzens condensation of α,β-unsaturated aldehydes and ketones

The one-pot Darzens condensation of α,β-unsaturated aldehydes and ketones with enolates of an α-bromo ester or ketone is described.     

Palladium(II)-catalyzed oxidative Heck coupling of thiazole-4-carboxylates

Oxidative Heck coupling of thiazole-4-carboxylates via palladium(II)-catalyzed C-H bond activation has been achieved in moderate to good yields. No ligand, and no acidic additive were used in the reaction. The results showed that this protocol tolerated a series of substitutions on the thiazole ring. A preliminary attempt of direct arylation with p-xylene via Pd(II)-catalyzed C-H bond activation has also been done.