Direct-space analysis of the Si–Si bonding pattern in the π-bonded chain reconstructed Si(111)(2 × 1) surface

Atomic and bond properties of silicon atoms in the buckled π-bonded chain reconstructed Si(111)(2 × 1) system were investigated by applying the quantum theory of atoms in molecules to a number of wavefunctions from periodic ab initio calculations using a slab model for the surface and geometries from experiment. Reconstruction involves much larger surface-cell charge distortions than in the unrelaxed surface and drastic changes in the atomic polarizations of the surface layer atoms. The effect of buckling is to largely differentiate the properties (charge, energy, volume, atomic polarizations) of the two unique atoms of each surface layer. The direction of electronic charge transfer in the topmost chain (from the “up” to the “down” atom) was found to be opposite to what was claimed previously. The π conjugation is not strictly localized along the topmost layer chains (where it is also largely incomplete), but rather it extends over a 2D array of bonds between the topmost and the lower surface layers. Received: 19 July 2000 / Accepted: 2 October 2000 / Published online: 23 January 2001     

NIR‐FT Raman and FT‐IR spectral investigations of the nonlinear optical chromophore p‐bromoacetanilide

Vibrational spectral analysis of the hydrogen‐bonded nonlinear optical (NLO) material p‐bromo acetanilide (PBA) was carried out using NIR‐FT‐Raman and FT‐IR spectroscopy. Ab initio molecular orbital computations were performed at HF/6‐31G (d) level to derive equilibrium geometry, vibrational wavenumbers, intensities and first hyperpolarizability. The lowering of the imino stretching wavenumbers suggests the existence of strong intermolecular N H···O hydrogen bonding, which was substantiated by the natural bond orbital (NBO) analysis. The vibrational spectra confirm that the charge‐transfer interaction between the  NHCOCH₃ group and—Br through phenyl ring is responsible for simultaneous strong IR and Raman activation of the ring mode 8a. Vibrational analysis indicates that the lowering of stretching wavenumbers of methyl group due to electronic effects simultaneously caused by induction and hyperconjugation is due to the presence of the oxygen atom. The presence of blue‐shifting H‐bonds of CH stretching wavenumbers, simultaneous activation of carbonyl stretching mode, the strong activity of low‐wavenumber H‐bond stretching vibrations and the role of intramolecular charge transfer in making the molecule NLO active have been analyzed on the basis of the vibrational spectral features. Copyright © 2007 John Wiley & Sons, Ltd.     

先兆型铁电体CaTiO3的第一性原理研究

在广义梯度近似(GGA)下利用全电势线性化的缀加平面波法(FPLAPW)计算了钛酸钙(CaTiO3)的电子结构.将实验测得的晶胞体积记为V0,计算中所用的晶胞体积记为V.当V/V0=1.0时, Ti离子位移为零相应于总能量低能态,钛酸钙不会发生铁电相变.但如果其体积膨胀10%,则Ti离子的位移将导致能量极小值.这意味着在立方钛酸钙中有发生铁电相变的趋势,表明在钛酸钙中存在着体积诱发的铁电相变,即钛酸钙为先兆型铁电体.态密度在V/V0=1.1时, Ti d电子和O(2) p电子之间存在强烈的轨道杂化,这种杂化是出现铁电性的必要条件.电场梯度的结果也表明了这一点.     

含锰钢表面氢原子/氢分子吸附行为的第一性原理研究

采用基于密度泛函理论的第一性原理方法研究了氢原子和氢分子在纯铁表面和锰原子掺杂表面的吸附与解离行为.研究结果表明,氢原子可在纯铁(001)表面稳定吸附,吸附能按照顶位,桥位和心位依次增强;而溶质原子锰降低了氢原子距离表面的位置并强化了氢原子的吸附行为.氢分子在纯铁表面的吸附解离行为取决于氢分子距离模型表面的初始距离和初始空间构型.氢分子平行于纯铁(001)表面时,距离心位1.2?发生解离,而桥位、顶位均不会发生解离;氢分子垂直放置时,距离桥位0.6?、顶位1.0?发生解离,心位不会发生解离.氢分子平行于锰掺杂纯铁(001)表面时,距离桥位0.6?、顶位0.7?、心位1.2?发生解离;氢分子垂直放置时,距离桥位、心位0.8?发生解离,而顶位放置氢分子不发生解离.归纳可知,锰溶质原子掺杂会增加铁基体表面氢原子和氢分子的吸附作用并促进氢分子发生分解.     

非金属N和过渡金属(Mo, Ru, Rh, Pd)掺杂SnO2磁性的第一性原理研究

本文基于第一性原理方法,对非金属元素(N)与过渡金属元素(Mo, Ru, Rh, Pd)掺杂SnO₂的电子结构和磁学性质进行计算分析.结果表明：形成能与过渡金属原子半径密切相关,随着过渡金属原子半径的增加,形成能在降低,其中N-Mo掺杂体系形成能最低,故该体系最容易掺杂形成;能带结构分析表明,由于掺杂体系自旋向上/向下杂质能级的数量和分布均不对称,掺杂体系均有磁性产生;进一步探究态密度可知,体系产生磁性的原因是过渡金属原子和N原子之间产生p-d轨道杂化,最外层电子轨道上的空位及单电子相互耦合所导致.结果表明,由于掺杂原子的引入,SnO₂体系产生磁性,并且掺杂体系呈现亚铁磁性,其中N-Rh掺杂体系的磁性最好,其磁矩为1.88μB,有望成为良好的稀磁半导体材料.     

过渡金属掺杂β-GeS的电子性能和光学性质的第一性原理研究

运用第一性原理计算方法系统研究了二维单层β-GeS中取代掺杂不同3d过渡金属原子时体系磁性、能带结构和光学性质的变化.结果表明：相比于本征非磁性β-GeS,取代掺杂Ti～Cu导致β-GeS具有磁性,且磁矩呈现出先增加后减小的变化趋势;掺杂后体系能带结构发生明显变化,分别表现出金属,半金属和半导体性质,而且导带底的位置明显向Fermi能级方向移动.相比于本征体系,非本征体系的光学性质表明：其在一定波段范围内出现蓝移现象以及光响应强度发生变化,且掺杂前后体系均表现出高的各向异性.     

基于密度泛函理论下O和Na掺杂单层h-BN的电子结构性质和光学效应的分析

基于密度泛函理论的第一性原理方法研究了O、Na单掺杂及O和Na共掺杂单层h-BN的形成能、电子结构和光学性质.结果表明:单掺杂体系中,O掺杂N位置、Na掺杂B位置时,掺杂形成能最低;共掺杂体系中,O和Na邻位掺杂,掺杂形成能最低.与单层h-BN相比,引入杂质原子后的体系禁带宽度均减小,其中O掺杂为n型掺杂,Na掺杂为p型掺杂,而O和Na共掺h-BN体系为直接带隙材料,有利于提高载流子的迁移率.在光学性质方面,Na掺杂h-BN体系与O和Na共掺h-BN的静介电常数均增大,在低能区介电虚部和光吸收峰均发生红移,其中Na掺杂体系红移最为显著,极化能力最强.因此Na单掺和O和Na共掺有望增强单层h-BN的光催化能力,可扩展其在催化材料、光电器件等领域的应用.     

钆、氟掺杂二氧化钒的晶体结构演变行为与相变机理

二氧化钒(VO₂)是一种热致相变材料,其过高的相变温度制约了其潜在应用.元素掺杂能够使VO₂的能带结构、态密度、键长和晶胞体积等晶格参数改变,引起其相变行为的变化.借助Materials Studio软件,基于第一性原理和分子轨道理论研究了钆、氟掺杂二氧化钒的晶体结构演变行为与相变机理.结果表明,无论F掺杂于VO₂(M型)中间O的位置还是两侧O位置,都会引起O—O键收缩,V—V键增长,β角增大,体系亥姆霍自由能增加,带隙相对减小,F侧位掺杂效果最好,随着V⁴⁺—V⁴⁺同极结合的减少,在1 at%F掺杂时相变温度达到最低;当Gd以0-1.8 at%掺杂于VO₂(M)中V位置时,O—O键和V—V键发生收缩,β角减小,亥姆霍自能增加,带隙减小,Gd 4f态与t_Ⅱ轨道重合,使相变能垒变低,相变温度显著降低.钆、氟两种元素掺杂VO₂相变机理更符合Peierls-Mott协同相变.     

Transient rheological behavior of tumbling side-chain liquid crystal polymers and determination of their λ parameters

The transient rheological behavior of several thermotropic nematic side-chain liquid crystal polysiloxanes is investigated. A homopolymer with a low-temperature smectic phase and two random copolymers, one consisting of smectogenic and non-smectogenic mesogens, the other one containing two spacers of different lengths, are studied. All systems are of tumbling type and exhibit oscillations in transient shear stress and first normal stress difference. Only the copolymer with mixed spacers shows a temperature-dependent transition from tumbling to flow-aligning within the nematic phase. The rheological response is slightly different for each polymer. The reactive parameter λ was calculated from the period of the oscillations and compared with rheo-NMR results. For all polymers, λ increases with increasing temperature. The sign of λ, obtained from NMR experiments, is positive for the copolymer with mixed spacers and negative for the other two systems, indicating a prolate shape of the first system and oblate shapes of the other two. Received: 30 April 1999 /Accepted: 2 August 1999     

光纤Bragg光栅的饱和效应

光纤 Bragg光栅的饱和效应可引起二阶衍射,并使一阶衍射的峰值反射率下降.本文利用折射率变化模型和耦合模理论,模拟了饱和情况下 Bragg光栅的一阶和二阶衍射谱,并讨论了饱和系数对一阶和二阶衍射的 Bragg波长和峰值反射率的影响.数值模拟结果与参考文献中的实验结果相吻合.