Electrochemical behavior of PbO2/PbSO4 electrode in the presence of surfactants in electrolyte

The electrochemical behavior of PbO₂/PbSO₄ electrode is investigated in 4.5 M H₂SO₄ in presence of three surfactants, Sodium Dodecyl Sulfate (SDS), Cetyltrimethylammonium bromide (CTAB) and Sodium tripolyphosphate (STPP), using cyclic voltametry, electrochemical spectroscopy impedance and galvanostatic discharge as techniques. The micro morphology of the surface of the modified PbO₂ electrodes is examined by scanning electron microscopy. The results show that SDS and CTAB when added in the electrolyte could refine the coating particles and change the roughness of the surface of the electrode leading to a thin film of PbO₂ with amorphous character. In addition, SDS and CTAB shift the hydrogen evolution potential towards more negative values, improve the discharge capacity of the anodic layer and accelerate the charge transfer. Under cathodic polarization, CTAB presents the lowest value of the charge transfer resistance R_ct. In the contrary, STPP shifts the oxygen evolution potential towards more positive values, passivates the surface of the electrode and inhibits completely the reaction of PbO₂ formation.     

辉光放电质谱分析中质谱干扰及其校正方法的现状

详细地介绍了辉光放电质谱分析中的质谱干扰如同量异位素、多原子离子和多电荷离子干扰。从同位素选择、高分辨率仪器、碰撞诱导解离、离子源冷却、数学方法校正、放电气体更换和放电气体纯度提高等方面对辉光放电质谱的质谱干扰校正方法的现状进行了评述(引用文献共68篇)。     

Testifying experiment of the multi-pulse phenomena of capillary discharge soft-X-ray laser

In a capillary discharge experiment for the neon-like argon lasing, we have proposed an experimental scheme to verify that the multi-spike of X-ray diode (XRD) signal is a multi-pulse laser or is a reflection of the laser pulse in the XRD.The ceramic capillary has an inner diameter of 3mm and a length of 200mm.At the gas pressure of 28Pa and discharge current of 27kA, stable lasing has been realized.The experimental results prove that the multi-spike of XRD signal is a reflection of the electromagnetic signal produced by the laser pulse in the XRD.The improved electrocircuit scheme of the XRD to minimize the reflection phenomena is also found.     

Initiation of Light Pulses by a Coaxial H‐Compressed Discharge

An optimum configuration of the discharge channel of a coaxial Hcompressed discharge is determined to exclude the screening influence of an envelope on discharge radiation in the UV region of a spectrum. It is shown that the use of an Hcompressed discharge of coaxial shape makes it possible to increase the radiation yield in the UV spectrum as compared to a plane shape at the same parameters of electric power supply.     

Effects of Water Vapor and Ammonia on SO2 Removal from Flue Gases Using Pulsed Corona Discharge

Plasma Chemistry and Plasma Processing - In the study of SO2 removal using pulsed corona discharge, there exists a serious confusion, that is, which kind of reactions, the thermal chemical...     

飞秒激光-薄膜靶相互作用中超热电子产额和激光转化效率

 在激光能量130 mJ（靶面），脉宽60 fs，波长800 nm，对比度1∶10^-6，激光与靶法线成45°夹角，P偏振，靶面激光峰值功率密度约为7.0×10¹⁷ W·cm^-2，无预脉冲的条件下，采用电子谱仪与经γ标准源标定的LiF热释光探测器（TLD）相配合，测量了飞秒激光-薄膜靶相互作用中产生的超热电子能谱。根据所测的能谱，推算出超热电子的产额和激光能量转化为超热电子能量的效率，在靶法线方向分别为1.19×10¹⁰/sr和4.55%/sr，在激光反射方向分别为1.83×10⁹/sr和0.76%/sr。结果显示，不同方向的超热电子产额和激光转化效率有所不同，原因在于激光-等离子体相互作用产生的超热电子构成各向异性的分布。     

直流辉光放电光谱分析铜合金的基本特性研究

用自行组装的直流辉光放电原子发射光谱（ｄｃ Ｇ Ｄ Ａ Ｅ Ｓ）仪器对分析铜合金的某些基本特性进行了研究 探讨了光源放电室结构、放电气体压力、放电电压等操作参数以及试样尺寸大小对放电性能及元素谱线强度的影响,并进行了优化 考察了在不同放电气压条件下样品的溅射率和优化条件下辉光放电的稳定性最后,分析了铜合金标准样品中的 Ａｌ和 Ｍｎ,结果较满意     

低能离子对酪氨酸溶液损伤作用的光谱研究初报

利用气体我放电产生低能离子,其在放电间隙的电场加速下撞击水溶液样品。了低能离子作用后酪氨酸溶液的紫外及红外吸收光谱的变化。结果表明,气体放电产生的离子对Ｔｙｒ造成了多种损伤。不仅使化学键断裂,分子解体,而且外来的活性离子会与溶液中的元素形成新的化学基团,妆在受损伤分子碎片上组成新的损伤物质,充分体现了低能离子与物质相互作用的“离子沉积”效应。     

H_2辉光放电清洗时轰击器壁的离子能量测量与分析

一、引言 辉光放电是清洗锻炼环流器真空室器壁的有效手段。H_2辉光放电时,氢离子轰击器壁与器壁中的C和O发生化学反应,生成CH_4,H_2O等气体;同时,这些离子提供能量使得吸附在器壁表面的杂质气体脱附,从而被泵出真空室外,达到清洗锻炼的目的。由于辉光放电时,离子轰击的能量较高,会引起一定的溅射沉积。我们在模拟真空室(六通装置)进行了辉光放电,对各种参数下的离子能量进行了测量,从中找出了离子能量与极间电压(阳极与器壁之间的电压)、放电电流、以及气压、离子流密度之间的某些关系。     

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Polycrystalline silicon wafers were etched in dc discharges of SF₆. SF_x species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF _x ⁺ signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SF_x species including SF₆, SF₄, SF₂, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF₄ and S₂F₂. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF₆ discharges.