Transient desorption of HD and D2 molecules from the D/Si(1 0 0) surfaces exposed to a modulated H-beam

We have studied the direct and indirect abstraction of D adatoms by H on the Si(1 0 0) surfaces by employing a pulsed H-beam. Desorptions of HD molecules is found to occur promptly as a result of direct abstraction at the beam on-cycles. In contrast, we find that D₂ desorption induced by adsorption of H atoms, i.e., the so-called adsorption-induced desorption (AID), occurs even at the beam off-cycles. The D₂ rate curves measured with the pulsed-H beam are decomposed into four components characterized with the reaction lifetimes of ?0.005, 0.06 ± 0.01, 0.8 ± 0.1, and 30 ± 5 s. We propose that the fastest and the second fastest AID channels are related to the thermodynamical instability of (1 × 1) dihydride domains locally formed on the (3 × 1) monodeuteride/dideuteride domains. The 0.8 s AID channel is attributed to the desorption occurring at the stage when (3 × 1) monodeuteride/dideuteride domains are built up upon H adsorption onto the (2 × 1) monohydride surface. The 30 s AID path is attributed to the thermal desorption accompanied by the shrinkage of the (3 × 1) domains which were excessively formed during the beam on-cycles on the (2 × 1) monohydride surface. Atomistic mechanisms are proposed for these three AID pathways.     

Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane,silane and trisilane

Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600–650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 Å/min). Trisilane permits the growth of Si at lower temperatures below 350 °C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 °C are defective, irrespective of the carrier gas, pressure and precursor flow used.     

ESTIMATION OF ACTIVATED ENERGY OF DESORPTION OF n-HEXANE ON ACTIVATED CARBONS BY TPD TECHNIQUE

1. INTRODUCTION In some cities of China, cancer and breath system diseases caused by the pollution of volatile organic compounds (VOCs) have been obviously increasing. The VOCs includes BTEX (benzene, toluene, ethylbenzene, and xylene), aldehydes, cresol, phenol, acetic acid, polynuclear aromatic hydrocarbons (PAHs), which have long-term human health implications. Emission of the VOCs has threatened the health of people seriously [1,2]. The pollution of the VOCs mostly hails from…     

A NEW MODEL FOR ESTIMATION OF DIFFUSION COEFFICIENT OF PHENOL DESORPTION WITHIN POLYMERIC RESIN UNDER ULTRASOUND

4 new model, phase equilibrium-kinetics model (PEKM), for estimation of diffusioncoefficient was proposed in this paper. Kinetic experiments of phenol desorption on NKAII resin inthe presence and the absence of ultrasound were separately conducted, and diffusion coefficients ofphenol within an adsorbent particle were estimated by means of proposed PEKM and classicsimplified model. Results show that the use of ultrasound not only changes the phase equilibriumstate of NKAll resin/phenol/water system which had been equilibrium at normal condition, but alsoenhances diffusion of phenol within the resin. The diffusion coefficient of phenol in the resin in thefield of ultrasound increases in an order of magnitude in comparison with the diffusion coefficientdetermined under no ultrasound Experimental results also indicated that the diffusion coefficientsestimated by PEKM were more accurate than that estimated by the classic simplified model.     

A scanning tunneling microscopy study of PH3 adsorption on Si(1 1 1)-7 × 7 surfaces, P-segregation and thermal desorption

PH₃ adsorption on Si(1 1 1)-7 × 7 was studied after various exposures between 0.3 and 60 L at room temperature by means of scanning tunneling microscopy (STM). PH₃-, PH₂-, H-reacted, and unreacted adatoms can be identified by analyzing empty-state STM images at different sample biases. PH_x-reacted rest-atoms can be observed in empty-state STM images if neighboring adatoms are hydrogen terminated. Most of the PH₃ adsorbs dissociatively on the surface, generating H- and PH₂-adsorbed rest-atom and adatom sites. Dangling-bonds at rest-atom sites are more reactive than adatom sites and the faulted half of the 7 × 7 unit cell is more reactive than the unfaulted half. Center adatoms are overwhelmingly preferred over corner adatoms for PH₂ adsorption. The saturation P coverage is ∼0.18 ML. Annealing of PH₃-reacted 7 × 7 surfaces at 900 K generates disordered, partially P-covered surfaces, but dosing PH₃ at 900 K forms P/Si(1 1 1)- surfaces. Si deposition at 510 K leaves disordered clusters on the surface, which cannot be reordered by annealing up to 800 K. However, annealing above 900 K recreates P/Si(1 1 1)- surfaces. Surface morphologies formed by sequential rapid thermal annealing are also presented.     

Evaluation of an activated carbon from olive stones used as an adsorbent for heavy metal removal from aqueous phases

The performance of a microporous activated carbon prepared chemically from olive stones for removing Cu(II), Cd(II) and Pb(II) from single and binary aqueous solutions was investigated via the batch technique. The activated carbon sample was characterized using N₂ adsorption–desorption isotherms, SEM, XRD, FTIR, and Boehm titration. The effect of initial pH and contact time were studied. Adsorption kinetic rates were found to be fast and kinetic experimental data fitted very well the pseudo-second-order equation. The adsorption isotherms fit the Redlich–Peterson model very well and maximum adsorption amounts of single metal ions solutions follow the trend Pb(II) > Cd(II) > Cu(II). The adsorption behavior of binary solution systems shows a relatively high affinity to Cu(II) at the activated carbon surface of the mixture with Cd(II) or Pb(II). An antagonistic competitive adsorption phenomenon was observed. Desorption experiments indicated that about 59.5% of Cu(II) and 23% of Cd(II) were desorbed using a diluted sulfuric acid solution.     

A REMPI study of the correlation of internal excitations and substrate-adsorbate coupling for CO molecules desorbed by electron impact

We compare vibrational, translational and rotational excitations of CO molecules desorbed by electron impact, and the yield of oxygen and carbon atoms from electron-induced fragmentation of CO molecules for: (1) CO monolayers on bare transition metals [Ru(001) and Pt(111)]; (2) CO monolayers coadsorbed with well-ordered oxygen atoms; (3) weakly bound CO monolayers on epitaxially grown silver films; and (4) CO monolayers decoupled from the metallic substrate by mono-atomic xenon spacer layers. For all but the last system, we find CO molecules which are vibrationally extremely hot. This is explained by the excitation of strongly antibonding multi-electron states which are quenched in the vicinity of the metal surface before enough translational energy is acquired by the nuclei to complete dissociation. For CO/Xe/Ag(111), vibrationally hot CO molecules are missing among the desorbing particles, whereas strong fragment signals persist. Because of the isolating Xe layer, the substrate-adsorbate coupling is too weak to terminate the dissociation reaction which is induced by the electron impact before the rupture of the molecular bond.     

Density functional study of the chemisorption of O2 on the armchair surface of graphite

The reaction between O₂ and the armchair surface of a model graphite molecule has been studied using density functional calculations at the B3LYP/6-31G(d) level of theory. Both equilibrium and transition state geometries were optimized to provide a fundamental understanding of the energetics and kinetics of the chemisorption, desorption, rearrangement, and migration reactions that contribute to carbon gasification. A small barrier of 18 kJ mol⁻¹ was found for the chemisorption reaction, which is 578 kJ mol⁻¹ exothermic overall, producing a stable quinone. A number of reaction pathways with barriers below 578 kJ mol⁻¹ were characterized. Gasification of carbon occurs as CO, with barriers of 296 and 435 kJ mol⁻¹ for the first and second CO loss, respectively. The stable quinone can also undergo a rearrangement reaction to form two ketene groups, with a barrier of 260 kJ mol⁻¹. If the armchair edge is extended to include an adjacent aromatic ring, the oxide can migrate along the surface. This initially forms a furan-like bridge structure, with a barrier of just 89 kJ mol⁻¹. A further barrier of 383 kJ mol⁻¹ leads to CO desorption from the furan. The furan can also rearrange further with a barrier of 212 kJ mol⁻¹ to form a five-membered lactone, the most stable structure identified on the potential energy surface. Rearrangement and migration reactions, which have not generally been incorporated into carbon gasification models, are shown to be potentially important pathways in carbon oxidation reactions.     

Electron-stimulated desorption of thin epitaxial films of KBr grown on (100)InSb

We have measured time-of-flight (TOF) distributions of Br atoms desorbed from thin (less than 1000 Å) epitaxial films of KBr on (100) InSb with a 2 keV electron beam. Although the general structure of the TOF spectra was similar to that obtained previously for the thick crystals, both the fast and the slow (thermal) components of the distribution were strongly dependent on the film thickness. We argue that this dependence is due to two different diffusion processes involved in the transport of the primary excitation products from the bulk to the surface. By measuring the velocity resolved ESD yield for films of various thicknesses, we determined that a diffusion length of the carriers responsible for the thermal ESD component varied from 30 to 700 Å with temperature in the range 20–300°C. In contrast, for the non-thermal desorption we found the carrier diffusion length of about 140 Å which did not depend significantly on the temperature.