Interplay of Rashba effect and spin Hall effect in perpendicular Pt/Co/MgO magnetic multilayers

The interplay of the Rashba effect and the spin Hall effect originating from current induced spin–orbit coupling was investigated in the as-deposited and annealed Pt/Co/MgO stacks with perpendicular magnetic anisotropy. The above two effects were analyzed based on Hall measurements under external magnetic fields longitudinal and vertical to dc current,respectively. The coercive field as a function of dc current in vertical mode with only the Rashba effect involved decreases due to thermal annealing. Meanwhile, spin orbit torques calculated from Hall resistance with only the spin Hall effect involved in the longitudinal mode decrease in the annealed sample. The experimental results prove that the bottom Pt/Co interface rather than the Co/MgO top one plays a more critical role in both Rashba effect and spin Hall effect.     

基于霍尔效应的角位移传感器演示仪

应用霍尔效应实现了对角度改变的显示,把一个非电量转换成电量输出,使得容易实现对角度的测量和自动控制。     

Investigation of influential factors on the purification of zone‐refined germanium ingot

Zone refining is one of the most important procedures to purify germanium crystals for the fabrication of detectors in our laboratory. In order to properly zone refine high‐purity germanium crystals, it is important to develop perfect cleaning procedures for raw materials, quartz tubes, and the containers holding raw materials. Additionally, vacuum levels, container types, the correct combination of ambient gases, the speed of zone travel, and the ratio of ingot length to molten zone length, all need to be carefully studied in order to obtain the best results possible. In this work, we investigate a number of influential factors in perfecting high‐purity germanium crystal growth, specifically: cleaning procedures, boat composition, vacuum levels in the chamber, zone travel speed, and the ratio of ingot length to molten zone length. Using the van der Pauw Hall technique, we were able to measure the electrical properties of zone‐refined ingots and analyze the origin and distribution of three main impurity elements (boron, aluminum and phosphorus) thereby allowing us to study potential contamination sources. After detailed analysis on the various influential factors, we were able to optimize the zone‐refining procedures.     

Radial electric potential in a metallic wire carrying a steady current

A radial electric potential is established in a metallic wire carrying a steady current. The steady current induces a magnetic field inside the conductor. A resultant Lorentz force drives a moving electron to distribute on the surface of the wire. An electric potential deference between two points along a radial direction in the conductor is proportional to a quadratic of the current.     

Gravity-induced geometric spin Hall effect of freely falling quantum particle

We discuss a new gravitational effect that the wave packet of a free-fall quantum particle undergoes a spin-dependent transverse shift in Earth's gravitational field. This effect is similar to the geometric spin Hall effect (GSHE) (Aiello 2009 et al Phys. Rev. Lett. 103 100401 ), and can be called gravity-induced GSHE. This effect suggests that the free-fall wave packets of opposite spin-polarized quantum particles can be split in the direction perpendicular to spin and gravity.     

Pt/GdFeCo/Pt多层膜的磁性和反常霍尔效应研究

亚铁磁材料因具有反铁磁排列的子晶格磁矩而表现出诸多丰富的物理性质,在磁信息存储和逻辑领域具有广阔的应用前景.本文采用磁控溅射方法在热氧化的硅基片上制备了Pt/GdFeCo(t)/Pt多层膜,系统研究了亚铁磁GdFeCo厚度对多层膜的表面形貌、结构、磁性以及反常霍尔效应(AHE)的影响.结构测试表明薄膜表面粗糙度较小,且GdFeCo层为非晶态;实验中利用GdFeCo层厚度可有效控制Gd元素含量,从而调控GdFeCo趋近反铁磁态特性的磁矩补偿点;通过重金属强自旋轨道耦合效应(SOC)和非晶态亚铁磁薄膜面内压应力,实现了良好垂直各向异性(PMA);进一步阐明了亚铁磁薄膜中磁性和反常霍尔效应的内在产生机制以及磁矩补偿点与温度的内在关系.这些结果为构建新一代低功耗自旋电子器件奠定基础.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

Prediction of quantum anomalous Hall effect in CrI3/ScCl2 bilayer heterostructure

Based on first-principles calculations, a two-dimensional (2D) van der Waals (vdW) bilayer heterostructure consisting of two topologically trivial ferromagnetic (FM) monolayers CrI₃ and ScCl₂ is proposed to realize the quantum anomalous Hall effect (QAHE) with a sizable topologically nontrivial band gap of 4.5 meV. Its topological nature is attributed to an interlayer band inversion between the monolayers and critically depends on the symmetry of the stacking configuration. We further demonstrate that the topologically nontrivial band gap can be increased nearly linearly by the application of a perpendicular external pressure and reaches 8.1 meV at 2.7 GPa, and the application of an external out-of-plane electric field can also modulate the band gap and convert the system back to topologically trivial via eliminating the band inversion. An effective model is developed to describe the topological phase evolution in this bilayer heterostructure. This work provides a new candidate system based on 2D vdW materials for realization of potential high-temperature QAHE with considerable controllability.     

Temperature dependent energy relaxation time in AlGaN/AlN/GaN heterostructures

The two-dimensional (2D) electron energy relaxation in Al_0.25Ga_0.75N/AlN/GaN heterostructures was investigated experimentally by using two experimental techniques; Shubnikov-de Haas (SdH) effect and classical Hall Effect. The electron temperature (T_e) of hot electrons was obtained from the lattice temperature (T_L) and the applied electric field dependencies of the amplitude of SdH oscillations and Hall mobility. The experimental results for the electron temperature dependence of power loss are also compared with the current theoretical models for power loss in 2D semiconductors. The power loss that was determined from the SdH measurements indicates that the energy relaxation of electrons is due to acoustic phonon emission via unscreened piezoelectric interaction. In addition, the power loss from the electrons obtained from Hall mobility for electron temperatures in the range T_e > 100 K is associated with optical phonon emission. The temperature dependent energy relaxation time in Al_0.25Ga_0.75N/AlN/GaN heterostructures that was determined from the power loss data indicates that hot electrons relax spontaneously with MHz to THz emission with increasing temperatures.     

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown,single crystal ZnO

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn_i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X_Zn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10¹⁷ cm⁻³ at 200 °C to 4.37×10¹⁸ cm^-3 at 800 °C.