Compositional and electrical properties of Cr,Nb, Cr/Nb,CrNbN, and CrN/NbN multilayers grown using the d.c. magnetron sputtering technique

Cr, Nb, Cr/Nb, CrN_x, NbN_x, CrNbN, and (CrN/NbN)_n structures were produced on Si and glass substrates, using the d.c. magnetron sputtering technique. Compositional analysis, based on binding energies of Cr, Nb, and N, was carried out by means of X-ray photoelectron spectroscopy (XPS). Through Auger electron spectroscopy (AES), depth profiles were obtained, allowing to demonstrate the multilayers production. Surface morphological characteristics, as roughness and grain size, were evaluated by atomic force microscopy (AFM), revealing very smooth surfaces, that is a consequence of the deposition parameters used in the synthetization experiments. Finally, for different configurations, conductivity measurements were carried out, revealing the influence of nitrogen content and temperature on electron transport. It was found that substoichiometric nitrides (CrN_0.35 and NbN_0.12) exhibited the highest conductivity, because the nitrogen atoms act as donor of electrons.     

Synthesis,characterization and electrochemical investigation on Nickel Manganese Oxide - Polybutylene Sebacate composite electrode of biodegradable nature for micro capacitor applications

Synthesis, characterization, surface morphology and electrochemical properties of non-stochiometric Nickel–Manganese oxide nanoparticles were carried out by urea assisted sol gel method. The Ni_1-xMn_xO (0.15≤ X ≤ 0.50) nanoparticle synthesized was found to be cubic and the existence of Mn₃O₄ and MnO₂ phases were established and confirmed by X-ray Diffraction (XRD) studies. Thermo Gravimetric-Differential Thermal Analysis (TG-DTA) studies provided the calcination temperature of the xerogel at 600 °C, wherein the lattice strain and the size of the nanoparticles were determined through Williamson Hall (WH) Plot. The surface morphology characteristics of these nanoclusters were authenticated by Scanning Electron Microscope (SEM) techniques. Further, electroanalytical techniques were employed as a tool in establishing the nanocomposite as an intriguing material to act as a capacitor at enhanced efficiency compared to that of conventional capacitors. The electrochemical competence of the electrode was established through cyclic voltammogram, (CV) and Electrochemical Impedance Spectral (EIS) studies. The values of capacitance for Ni_1-xMn_xO, (0.15≤ X ≤ 0.5) nanoparticles varied from 7000 to 8000 mFg^?1, measured at 20 mVs^?1scan rate in 1.0 M Na₂SO₄and the temperature dependent conductance property for Ni_0.85Mn_0.15O electrode verified the Arrhenius Equation. The synthesis of a biodegradable polymer, Poly Butylene Sebacate (PBS) employed as conducting polymer for ultra capacitor applications is comparatively superior and definitely provides an edge over other capacitors in existence which is predominanantly attributed to its biodegradability nature. Further, the specific capacitance of PBS- Ni_0.85Mn_0.15O composite electrode was found to be 5180 mFg^?1 which clearly illustrates that these composites are potential candidates of the type biodegradable supercapacitors that are evolving transient sources of power in the future and the biodegradability of the polymer-metal oxide composite electrode fetches more significance in terms of disposal of electronic and electrical wares.     

On the role of a torsion‐like field in a scenario for the Spin Hall Effect

Starting from a field theory action that describes a Dirac fermion, we propose and analyze a model based on a low‐relativistic Pauli equation coupled to a torsion‐like term to study Spin Hall Effect (SHE). We point out a very particular connection between the modified Pauli equation and the (SHE), where what we refer to torsion as field playing an important role in the spin‐orbit (SO) coupling process. In this scenario, we present a proposal of a spin‐type current, considering the tiny contributions of torsion in connection with intrinsic anisotropy of the crystal electric field.     

Electron transport near the Mott transition in n-GaAs and n-GaN

In this paper, we study the temperature dependence of the conductivity and the Hall coefficient near the metal–insulator phase transition. A theoretical investigation is performed within the effective mass approximation. The variational method is used to calculate the eigenvalues and eigenfunctions of the impurity states. Unlike previous studies, we have included nonlinear corrections to the screened impurity potential, because the Thomas–Fermi approximation is incorrect for the insulator phase. It is also shown that near the phase transition the exchange interaction is essential. The obtained temperature dependencies explain several experimental measurements in gallium arsenide (GaAs) and gallium nitride (GaN).     

n-Hg_(0.80)Mg_(0.20)Te界面积累层中二维电子气的输运特性研究

通过变磁场霍耳测量研究了MBE生长的Hg0 .80 Mg0 .2 0 Te薄膜在 1 5— 2 5 0K温度范围内的输运特性 .采用迁移率谱 (MS)和多载流子拟合过程 (MCF)相结合的方法对实验数据进行了分析 ,由该方法获得的结果和ShubnikovdeHass(SdH)振荡测量的结果都证明材料中存在二维 (2D)电子和三维 (3D)电子 .其中 2D电子主要来自于Hg1-xMgxTe CdTe的界面积累层或Hg1-xMgxTe与真空界面附近的积累层 .3D电子迁移率随温度的变化关系表明了Hg1-xMgxTe中的电子散射机理与Hg1-xCdxTe中的非常相似 :在低温下电离杂质散射 (考虑了屏蔽效应 )起主导地位 ,而温度在 10 0K以上时 ,晶格散射占主导地位 .     

Ballistic phonon studies in the lowest Landau level

We report time-resolved studies of ballistic phonon absorption in the fractional quantum Hall regime at Landau level filling factors of and . The technique used can resolve the interaction of the two-dimensional electron system with LA and TA phonons and has been used to measure the temperature variation of the heat capacity of a single layer of electrons at . The energy gaps at have also been measured and found to be in good agreement with theory. The roles of compressible and incompressible regions in the phonon absorption process are discussed. Angle resolved measurements at are also in good agreement with theory.     

The Fermi-sea-like limit of the composite fermion wave function

The experimentally observed filling factors of the fractional quantum Hall effect can be described in terms of the composite fermion wave function of the Jastrow-Slater form [0pt] fully projected into the lowest Landau level. The Slater determinant of the above composite fermion wave function represents the filled Landau levels of composite fermions evaluated at the corresponding reduced magnetic field. For a system of fermions studied in the thermodynamic limit, we prove that in the even-denominator-filled state limit (when the number of filled Landau levels of composite fermions becomes infinite), the above composite fermion wave function exactly transforms into the Rezayi-Read Fermi-sea-like wave function [0pt] constructed by attaching 2m flux quanta to the Slater determinant of two-dimensional free fermions at the density corresponding to that filling. We study the composite fermion wave function and its evolution into the Fermi-sea-like wave function for a range of filling factors very close to the even-denominator-filled state. Received 19 March 1999     

厅堂声学计算机模型的应用(英)

此处所介绍的厅堂声学计算机模型计算了房间和多功能厅的声学响应。这个模型是以房厅的三维表示为基础的。每个墙面都赋予一个吸声系数,并且分成更小的单元。首先计算了单元间影响系数所组成的矩阵。对于给定的声源,可以计算每个单元收到的能量,并由此定出房厅内任一点的声级,这样又能够算出（ａ）随距离变化的衰减,（ｂ）在任一平面上的声照度,和（ｃ）任一点所收到声能的接收指向性．可以算出房厅内任一被选定点的回波图,作为接收器所在地接收指向性随时间的演变;这么一个特点使得有可能核对目视图象和声图象之间的可能不符。这个软件能够设法任意修改房间的形状,以最优化房间的声学特征．本文列举了一个厅堂声学的研究例,是关于沙特拉伯首都Ｒｉｙａｄｈ的 Ａｈｕｒａ主厅的。     

Investigation of carrier scattering mechanisms in TlInS2 single crystals by Hall effect measurements

TlInS₂ single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100‐400 and 170‐400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole‐ and electron‐phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole‐electron pair effective masses of 0.24 m_o, 0.14 m_o and 0.09 m_o and hole‐ and electron‐phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)