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11.
We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm2/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (Ns) for the first time. Ns increased from 1.0×1012 to 2.7×1013 cm−2 when the Al composition increased from 0.78 to 0.89. 相似文献
12.
Frank H.G.M. Wijnands Charles G. Crookes Paul M. Charles Richard M. Ash Ian F. Lealman Michael J. Robertson Anthony E. Kelly Kevin A. Williams Aeneas B. Massara Richard V. Penty Ian H. White 《Optical and Quantum Electronics》2002,34(10):959-973
An anomalous modulation in the wavelength spectrum has been observed in lasers with spot-size converters. This intensity modulation is shown to be caused by beating between the fundamental lasing mode and radiation modes in the taper. This results in a periodic modulation in the net gain spectrum, which causes wavelength jumps between adjacent net gain maxima, and a drive current dependent spectral width that is expected to affect system performance. The amplitude of this spectral modulation is reduced significantly by either using an angled rear-facet which reflects the beating radiation modes away from the laser axis, or by using a nonlinear, adiabatic taper. 相似文献
13.
H.L. Li H.T. Lin Y.H. Wu T. Liu Z.L. Zhao G.C. Han T.C. Chong 《Journal of magnetism and magnetic materials》2006
We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature. 相似文献
14.
15.
The bias dependent interface charge is considered as the origin of the observed non-ideality in current–voltage and capacitance–voltage characteristics. Using the simplified model for the interface electronic structure based on defects interacting with the continuum of interface states, the microscopic origin of empirical parameters describing the bias dependent interface charge function is investigated. The results show that in non-ideal metal–semiconductor contacts the interface charge function depends on the interface disorder parameter, density of defects, barrier pinning parameter and the effective gap center. The theoretical predictions are tested against several sets of published experimental data on bias dependent ideality factor and excess capacitance in various metal–semicoductor systems. 相似文献
16.
杨青 《高等学校计算数学学报(英文版)》2003,12(2)
The mathematical model of semiconductor devices is described by the initial boundary value problem of a system of three nonlinear partial differential equations. One equation in elliptic form is for the electrostatic potential; two equations of convection-dominated diffusion type are for the electron and hole concentrations. Finite volume element procedure are put forward for the electrostatic potential, while upwind 相似文献
17.
本文用准平衡模型分析讨论了线性电压扫描下MIS器件的I/V瞬态.文中除了给出一般的处理方法以外,还给出了几种不同电压扫描率下I/Y特性的计算结果,并与已往的模型作了比较. 相似文献
18.
The article concerns heterojunction resonant cavity-enhanced (RCE) Schottky photodiodes with GaAs in the absorption layer. The quantum efficiency and linear pulse response have thoroughly been analysed. For the first time, the response of a heterojunction photodiode has been modelled by the phenomenological model for a two-valley semiconductor. The results obtained have shown that the satellite valleys, as well as the parasitic time constant, significantly influence the response and, accordingly, have to be taken into account when analysing and optimizing RCE photodetectors. 相似文献
19.
杨青 《高校应用数学学报(A辑)》2002,17(3):353-362
热传导型半导体器件的瞬时状态由四个方程的非线性偏微分方程组的初边值问题所决定,其中电子位势方程是椭圆型的,电子和空穴浓度方程是对流扩散型的,温度方程为热传导型的。本文提出解这类问题的特征变网格有限元法,并进行了理论分析,在一定条件下,得到了某种意义下的最佳L^2误差估计结果。 相似文献
20.
The electron-stimulated desorption (ESD) of D− and H− ions from condensed D2O and H2O films is investigated. Three low-energy peaks are observed in the ESD anion yield, which are identified as arising from excitation of 2B1, 2A1 and 2B2 dissociative electron attachment (DEA) resonances. Additional structure is observed between 18 and 32 eV, which may be due to ion pair formation or to DEA resonances involving the 2a1 orbital. The ion yield resulting from excitation of the 2B1 resonance increases as the film is heated. We attribute the increase in the ion yield to thermally induced hydrogen bond breaking near the surface, which enhances the lifetimes of the excited states that lead to desorption. 相似文献