线状锗等离子体X射线线谱的时间分辨测量

用自行研制的X射线条纹晶体谱仪首次测量了线状锗等离子体的X射线时间分辨谱。给出了类Ne-锗L线共振线的时间演化过程,并用类Ne-锗L线共振线与其双电子俘获伴线的相对强度比粗估了锗等离子体的电子温度及其随时间的变化,实验给出了X光激光增益区介质的电子温度为400～760eV,同时给出了电子温度保持相对恒定的时间不小于90ps(电子温度变化小于2％)。     

非晶Nd-Fe薄膜电阻的温度效应与非晶稳定性

用闪光蒸镀法在77K制备了Nd_xFe_1-x(x=0.06-0.80)非晶薄膜,原位测定了其电阻随温度的变化。结果表明:在0.192和ρ(T)∝T。晶化不是在一个固定的温度,而是在一个温度区间发生。     

Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films

Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition＇parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of （002） crystal planes of the He-charged Ti film shifts to a lower angle and that of （100） crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.     

A Calculation Approach to Elastic Constants of Crystallines at High Pressure and Finite Temperature

Elastic constants of Na and Li metals are calculated successfully for temperatures up to 350K and pressures up to 30GPa using a scheme without involving any adjustable parameter.Elastic constants are assumed to depend only on an effective pair potential that is only determined by the average interatomic distance.Temperature has an effect on elastic constants by way of charging the equilibrium.The elastic constants can be obtained by fitting the relationship between total energy and strain tensor using the new set of lattice parameters obtained by calculating displacement of atoms at the finite temperature and at a fixed pressure.The relationship between the effective pair potential and the interatiomic distance is fitted by using a series of data of cohesive energy corresponding to lattice parameters.     

Growth of NaBi（WO4）2 Dendrite and Mechanism

The solid-liquid interface motion of NaBi（WO4）2 （NBWO） melt crystal growth is observed in an in situ system, in which the whole processes of interface transition from fiat interface and cellular to dendrite are visualized. The spacing of the dendrite under smaller temperature gradient turns out to be larger than that under larger temperature gradient, which is found to be sensitive to the temperature distribution. The mechanism of dendrite growth of NBWO is studied based on the model of the growth units of anion coordination polyhedra. The { 001} face has two apex links, so it shows higher stability and has high growth rate and forms the arm of dendrite, whereas the {010} face has only one apex link, and thus shows relative slower growth rate and firstly forms the branches.     

热处理条件对双粉工艺中Bi—2212粉末的相组成影响

实验研究了Bi-2212粉末在空气，8％O2和纯O2种处理的相组成特征，指出通过改变热处理温度和气氛可控制前驱粉中对2223成相影响较大的(Bi，Pb)-2212相，Ca2PbO4相，2201相和14：24AEC等相。     

神光Ⅱ上柱形黑腔辐射驱动冲击波

利用神光Ⅱ的八路三倍频激光装置，驱动柱形黑腔产生的x 射线作辐射源驱动台阶铝样品产生冲击波，获得了清晰的冲击波图像，通过冲击波过台阶样 品的时间差获得冲击波速度和压力分别为31.2km/s和17.5×10⁵MPa.采用软x射线能谱 仪通过激光注入孔测量的辐射温度与采用冲击波法测量辐射温度的结果一致. 关键词： 冲击波 辐射驱动 辐射温度     

遥感器CCD驱动器热设计及其在摄像过程中的温度变化

CCD驱动器是航天成像遥感器摄像过程中的主要热源之一。防止CCD驱动器过热是保证其正常工作的重要方面。介绍了遥感器的工作模式和对CCD驱动器采取的热控制措施。通过热平衡试验,利用回归的方法,对CCD驱动器在摄像过程中的温度变化规律进行了分析,同时对热控制效果进行了评估。CCD驱动器工作时升温速率在0.85℃/min左右,整个摄像过程中最高温度约为26℃,所实施的热控制措施效果理想。     

用化学试剂校正马弗炉的实用温度

在实验室计量认证中 ,马弗炉温度的校正要请专业计量部门对测温元件匹配作严格的电学测试。而在实际化验工作中 ,找一个更简便、直观的实用测温方法很有必要。许多实例表明 ,马弗炉控制器指示的温度与实际温度相差 5 0～ 10 0℃是常事。例如电学元件老化、新购热电偶规格有差异、热电偶受挥发性化学物质侵蚀、热电偶插入炉内深度不合适都会影响温度的指示值。而坩埚在炉内加热 ,因位置不同 ,炉前、炉后、炉边转角处、炉内电炉丝不均匀也都会影响加热的实际温度。用纯化学试剂放在瓷坩埚 (或镍坩埚 )中 ,在马弗炉内相同条件下加热 ,观察熔化…     

Si微电阻桥温度分布与热传导特性的显微Raman光谱研究

采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究，根据Si桥的实际特性建立相应的Raman散射模型，通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度.对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描，得到各点的温升及其分布.用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算，其结果在热导分布的基本趋势上与实验相一致.实验细致地揭示了热导分布的局域起伏，反映出实际器件的不均匀性，为改进器件设计、优化器件性能提供了实验依据. 关键词： Raman光谱 Si桥 温度分布 热导