Tb^3＋：YAG单晶荧光层中掺杂Ga^3＋的荧光敏化作用

采用液相外延工艺成功制备了Tb^3 ：YAGG单晶荧光层，研究了Tb^3 激活YAG主晶格外延层中Ga^3 掺杂的荧光敏化效应，可以看到在Tb^3 荧光得到显著增强的同时，外延荧光层发光的饱和特性也有所改善。实验中观察到了Ga^3 掺杂后基质晶体吸收边缘向长波方向展宽，并与Tb^3 的^7Fe6-^9E、^7E典型吸收峰发生交叠的现象，用基质与Tb^3 之间的声子耦合解释了上述Tb^3 ：YAGG外延层中所存在的能量传递、荧光敏化现象。基质与掺杂激活中心间能量传递机制的建立将会为基于YAG主晶格的高效荧光材料研究提供一个新的思路。     

p-n型GaInP_2/GaAs叠层太阳电池研究

报道了对p n型GaInP2 GaAs叠层太阳电池的研究结果 .采用低压金属有机物化学气相沉积工艺制备电池样品 .通过对GaInP2 顶电池中场助收集效应的计算机模拟 ,提出用p p- n- n 结构取代常用的p n结构 ,显著改善了GaInP2 顶电池和GaInP2 GaAs叠层太阳电池的光伏性能 ,使其光电转换效率 (Eff)分别达到 14 2 6 %和 2 3 82 %(AM0 ,2 5℃ ,2× 2cm2 )     

聚焦Ga+离子束注入方法研制半导体量子线结构

采用聚焦Ga⁺离子束注入方法,在GaAs/Al_0.3Ga_0.7As多量子阱材料上尝试制备半导体量子线。通过低温光致发光谱,测量了量子线的光电特性,并观察了由于沟道效应导致的深层量子阱的光谱蓝移。 关键词：     

Theoretical Analysis of Structures of Ga4N4 Clusters

The structures and energies of a Ga4N4 cluster have been calculated using a full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO MD) method. We obtained twenty-four structures for a Ga4N4 cluster. The most stable structure we obtained is a C8 three-dimensional structure, the energy of which is lower than that of the C2v symmetry structure proposed by Kandalam et al. [J. Phys. Chem. B106 (2002) 1945] The calculated results show that the isomer with an N3 subunit is preferred, supporting the previous result made by Kandalam et al,We found that the most stable structure of Ga4N4 clusters presented semiconductor-like properties through the calculation of the density of states.