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71.
The near-ultraviolet lighting-emitting-diodes (UV-LEDs) with the InGaN/GaN multi-quantum-well (MQW) structure were grown by low-pressure metalorganic vapour phase epitaxy. The double crystal x-ray diffraction revealed a distinct second-order satellite peak. The near-ultraviolet InGaN/GaN MQW LEDs have been successfully fabricated to emit at 401.2nm with narrow FWHM of 14.3nm and the forward voltage of 3.6 V at 20 mA injection current at room temperature. With increasing forward current from l 0 mA to 50 mA, the redshift of the peak wavelength was observed due to the band-gap narrowing caused by heat generation.  相似文献   
72.
Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.  相似文献   
73.
74.
Highly dispersive nanospheres of MnFe204 are prepared by template free hydrothermal method. The nanospheres have 47.3-nm average diameter, narrow size distribution, and good crystallinity with average crystallite size about 22 nm. The reaction temperature strongly affects the morphology, and high temperature is found to be responsible for growth of uniform nanospheres. Raman spectroscopy reveals high purity of prepared nanospheres. High saturation magnetization (78.3 emu/g), low coercivity (45 Oe, 10e = 79.5775 A.cm-1), low remanence (5.32 emu/g), and high anisotropy constant 2.84 × 10^4 J/m3 (10 times larger than bulk) are observed at room temperatures. The nearly snperparamagnetic behavior is ~ spin due to comparable size of nanospheres with superparamagnetic critical thameter Dcr spm The high value of Keff may be due to coupling between the pinned moment in the amorphous shell and the magnetic moment in the core of the nanospheres. The nanospheres show prominent optical absorption in the visible region, and the indirect band gap is estimated to be 0.98 eV from the transmission spectrum. The prepared Mn ferrite has potential applications in biomedicine and photocatalysis.  相似文献   
75.
The method of numerical analysis is employed to study the resonance mechanism of the lumped parameter system model for acoustic mine detection. Based on the basic principle of the acoustic resonance technique for mine detection and the characteristics of low-frequency acoustics, the “soil-mine” system could be equivalent to a damping “mass-spring” resonance model with a lumped parameter analysis method. The dynamic simulation software, Adams, is adopted to analyze the lumped parameter system model numerically. The simulated resonance frequency and anti-resonance frequency are 151 Hz and 512 Hz respectively, basically in agreement with the published resonance frequency of 155 Hz and anti-resonance frequency of 513 Hz, which were measured in the experiment. Therefore, the technique of numerical simulation is validated to have the potential for analyzing the acoustic mine detection model quantitatively. The influences of the soil and mine parameters on the resonance characteristics of the soil–mine system could be investigated by changing the parameter setup in a flexible manner.  相似文献   
76.
运用密度泛函方法研究了醋酸钯催化的五氟苯与苯的氧化C-H/C-H偶联反应机理. 主要考察了以下四种不同可能机理路径:A 苯C-H活化发生在五氟苯C-H活化前,B 五氟苯C-H活化发生在苯C-H活化前,C 苯C-H活化后与五氟苯银化合物发生转金属化,D 首先五氟苯银化合物与醋酸钯转金属化,然后发生苯的C-HH活化步骤. 计算结果表明,两个反应底物(五氟苯与苯)的C-H活化顺序在不同反应条件下是不同的,其中银盐的存在与否是决定因素. 在无银盐条件下,反应的优势路径是机理B. 在银盐存在条件下,五氟苯银盐与钯中心的配位非常容易,但是其生成的中间体难以引导后续的苯环C-H活化步骤,使得整个反应能垒较高. 因此,银盐的存在使得机理C的能量相对优势,该机理与机理A相似. 计算结果与氢/氘交换实验及动力学同位素效应的实验结果一致.  相似文献   
77.
Photoelectrical response characteristics of epitaxial graphene (EG) films on Si- and C-terminated 6H-SiC, and transferred chemical vapor deposition (CVD) graphene films on Si-terminated 6H-SiC have been investigated. The results show that upon illumination by a xenon lamp, the photocurrent of EG grown on Si-terminated SiC significantly increases by 147.6%, while the photocurrents of EG grown on C-terminated SiC, and transferred CVD graphene on Si-terminated SiC slightly decrease by 0.5% and 2.7%, respectively. The interfacial buffer layer between EG and Si-terminated 6H-SiC is responsible for the significant photoelectrical response of EG. Its strong photoelectrical response makes it promising for optoelectronic applications.  相似文献   
78.
79.
臭菘,在日本被称为坐禅草,因为像一位专心致志、冥思苦想的法师而得名。即使在滴水成冰的冬季,它的佛焰苞(天南星科植物佛焰花序外的苞片)内仍能保持20℃。臭菘的热量来自佛焰花序(中间有一花序轴的肉穗状花序)的新陈代谢作用。  相似文献   
80.
莫春兰  李鹏等 《光学学报》2002,22(2):81-185
用金必有机化学气相沉积技术在三种不同型号的反应管中生长了GaN:Si膜。通过对样品的光电及结晶性能的分析,研究了气流混合时间不同对GaN:Si膜性质的影响。结果表明:合理的Ⅲ、Ⅴ族气流混合对提高GaN:Si膜的光电及结晶性能很重要。Ⅲ、Ⅴ族气流混合太早,气流混合时间长,GaN:Si膜的黄带与发射强度之比较大,X射线双晶衍射半高宽;Ⅲ、Ⅴ族气流混合太晚,尽管可减少预反应,但气流混合不均匀,致使GaN:Si膜的发光性能及结晶性能变差。使用Ⅲ、Ⅴ族气流混合适中的反应管B生长、获得了光电及结晶性能良好的CaN:Si单晶膜。  相似文献   
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