Crystal Structure of Adduct 2-Phenyl-imidazo [ 4,5-f ] 1,10-phenanthroline Methanol

The structure of the title adduct comprises a phenanthroline derivative 2-phenyl-imidazo[4,5-f]1,10-phenanthroline and a methanol.The composition of the crystalline adduct was characterized as C19H12N4.CH3OH.It belongs to orthorhombic system,space group Pna21 with a=1.3693(4)nm,b=2.2988(7)nm,c=0.51338(15)nm,V=1.6160(8)nm^3.Z=4,and final R1=0.0423.wR2=0.1012 .Crystal structure shows that all the 19 carbon atoms and 4 nitrogen atoms are coplanar.The bond length data indicated that a very extensive conjugation system was formed.This conjugation makes the compound being a potentially excellent energy transformer used for luminescent materials.     

Release Behaviour of Shock Loaded LY12 Aluminium Alloy

By making use of a light gas gun, a specially designed target is impacted by the LY12 flyer, and the pressure is taken in the range of 0.6-3 GPa. Based on the stress profiles measured in the buffer materials by manganese gauges, the Hugoniot curve and release curves of LY12 aluminium alloy are obtained. Meanwhile, the release curves from different initial shocked states are described in both the pressure-particle velocity plane and the pressure-specific volume plane.     

深能级杂质对光导半导体开关非线性特性的影响

建立了非线性GaAs光导开关深能级杂质瞬态模型的基本方程,获得了与实验现象定性吻合的电流输出,给出了平均载流子随时间演化的情况.分析结果表明,在考虑了深能级杂质的俘获、发射和碰撞电离后,有可能对非线性光导开关中发生的一系列现象做出解释,进一步的仔细分析将对非线性光导开关的设计和制作提供理论指导.     

二次锂电池正极材料LixNi0.3Co0.7O2的XPS与XRD研究

结果表明，ＬｉｘＮｉ０．３Ｃｏ０．７Ｏ２具有六方晶系Ｒ３＾－ｍ空间群结构。当Ｘ－１，０．３１５时，其晶胞参数分别为ａ＝２．８２６ｎｍ，ｃ＝１４．１３０ｎｍ和ａ＝０．２８０８ｎｍ，ｃ＝１．４２５３ｎｍ；ＭＯ６（Ｍ＝Ｎｉ，Ｃｏ）八面体中Ｍ－Ｏ平均距离分别为０。１９４１ｎｍ和０．１９３３ｎｍ。ＸＰＳ分析结果表明ＬＩｘＮｉ０．３ＣＯ０．７Ｏ２表面存在Ｌｉ２Ｏ，同时探讨了其中过渡金属离子的３ｄ电子结构变化。     

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact.The experiment shows that the apparent barrier height (φap) increases from 0.437eV at 78K to 0.698eV at room temperature.the plot of φap versus 1/T does not exhibit a simple linear relationship over the whole temperature range,indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution.A new multi-Gaussian distribution model is developed.Our experimental results can be explained by a double Gaussian distribution of the barrier heights.The weight,the mean barrier height,and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999,0.721 and 0.696,0.069 and 0.012eV,respectively.     

Modification of Absorption of a Bulk Material by Photonic Crystals

We show theoretically that it is possible to modify absorption of a bulk absorbing material by inserting another non-absorbing dielectric slab periodically to form one-dimensional photonic crystals.It is found that,for frequencies within photonic bandgaps,absorption is always suppressed.For frequencies located at photonic bands,absorption can be suppressed or enhanced,which depends on the relative values of the real refractive index of the absorbing and non-absorbing dielectric layers.     

Photoluminescence Characterization of Silicon Nanoparticles Hybridized Europium Complex

A europium complex Eu (DBM)3 TPPO (Eu tris(benzoylmethide)-(triphenylphosphine oxide)) and silicon nanoparticles have been hybridized.The hybridization can evidently change the photoluminescence (PL) characteristics of the Eu complex in the following aspects:under an excitation of 390nm,the intensity of the PL peak at 611nm due to the ^5Du-^7F2 transition of the Eu^3 ions has been increased by 30%,and thc integrated PL intensity in the visible range has been increased by nearly 3 times;the PL excitation efficiency beyond 440nm has been improved cvidently;the peak in the PL excitation spectrum shifts from 408nm to 388nm,and the PL decay time decreases from 2.07 to 0.96μs,The experimental results indicatde that in the PL process,the photoexcited energy may transfer from the silicon nanoparticlcs to the Eu^3 ions.     

半导体量子点及其应用(Ⅰ)

量子点，又称“人造原子”，它是纳米科学与技术研究的重要组成部分，由于载流子在半导体量子点中受到三维限制而具有的优异性能，构成了量子器件和电路的基础，在未来的纳米电子学、光电子学，光子、量子计算和生命科学等方面有着重要的应用前景，受到人们广泛重视，文章分为Ⅰ、Ⅱ两个部分：第Ⅰ部分介绍了半导体量子点结构的制备和性质；第Ⅱ部分介绍了量子点器件的可能应用。     

Fluorescence Microscopy of Nanoscale Silver Oxide Thin Films

The experimental conditions for photoactivated intermittent fluorescence from nanoscale silver oxide were studied with fluorescence microscopy.Strong fluorescence was observed from the Ag2O particles with size of 10-20nm excited with both blue and green light .We observed the saturation of Photoexcitation with blue light and explained the experimental results using the model of agglomeration of silver atoms to form small clusters and the fluorescence of Ag2 and Ag3 clusters.