热熔合反应合成超重核产生截面的同位素依赖性

通过在形成超重核的重离子俘获和熔合过程中引入位垒分布函数的方法对双核模型做了进一步发展. 超重核形成过程中的俘获、熔合和蒸发3个阶段分别采用了半经验的耦合道模型、数值求解主方程和统计蒸发模型的方法来描述. 计算了近年来Dubna小组利用热熔合反应⁴⁸Ca(²⁴³Am, 3n—5n)^288—286115和⁴⁸Ca(²⁴⁸Cm, 3n—5n)^293—291116合成超重新核素的蒸发余核激发函数. 系统分析了⁴⁸Ca轰击锕系元素U,Np,Pu,Am,Cm合成超重核Z=112—116产生截面的同位素依赖性. 给出了合成超重新核素最佳的弹靶组合和入射能量, 即有最大的超重核产生截面. 计算说明, 壳修正能和中子分离能是影响超重核生成截面产生同位素依赖性的主要因素.     

叶片式混输泵内气液两相流的数值计算

气液两相流的数值模拟是多相混输技术研究中的一个难点.本文假定混输泵叶轮内为泡状流动,基于雷诺时均N-S方程和气液两相双流体模型,采用SIMPLEC算法,对叶片式混输泵叶轮内部两相三维紊流流场进行了数值计算,分析了水气混合工况下的流场分布特点.对含气率GVF=15%工况下的扬程特性进行了预测并与试验结果进行对比.数值计算结果表明,混输泵叶轮流道采用较小的径向尺寸差能较好地避免离心力所引起的气液分离,防止气堵现象的发生;叶轮进口部分存在的低压旋涡区容易使气体积聚,因此有必要进一步改进叶轮进口区的水力设计.     

Isoscaling in Statistical Sequential Decay Model

A sequential decay model is used to study isoscaling, i.e. the factorization of the isotope ratios from sources of different isospins and sizes over a broad range of excitation energies, into fugacity terms of proton and neutron number, R21（N, Z） = Y2（ N, Z）/Y1（ N, Z） = Cexp（αN -βZ）. It is found that the isoscaling parameters α and β have a strong dependence on the isospin difference of equilibrated source and excitation energy, no significant influence of the source size on α andβ has been observed. It is found that α and β decrease with the excitation energy and are linear functions of 1/T and △（Z/A）2 or△（N/A）2 of the sources. Symmetry energy coefticient Gsym is constrained from the relationship of a and source △（Z/A）2, /3 and source △（N/A）2.     

Quantum Tricritical Point in the Spin-Boson Model with an Ohmic Bath

The dynamics of the spin-boson model with an Ohmic bath at finite temperature is studied by a variational calculation. Numerical solution of the self-consistent equation derived from the variational method shows that the transition from incoherent to coherent phases is discontinuous. It indicates that （T = 0, s = 1） is a tricritical point, i.e. the transition changes from continuous to discontinuous by tuning from T = 0 to T≠ 0. The discontinuous transition at finite temperature is analysed by Landau theory and the relation to the experimental observation on the coherent state is also discussed.     

Mesons in the Constituent Quark Model

The quark-antiquark （q^-q） spectrum is studied by solving the Schrōdinger equation in the framework of nonrelativistic constituent quark model. An overall good fit to the experimental data of meson is obtained. The interactions between quark and antiquark consist of quadratic colour confinement-exchange, one-gluon-exchange, and Goldstone-boson-exchange potentials.     

Numerical Simulation of the Elastic Shrinkage Induced by Portevin-Le Chatelier Effect

A new one-dimensional phenomenological model based on the dynamic strain aging mechanism is developed. In order to account for the elastic shrinkage induced by the Portevin-Le Chatelier effect, elastic deformation is considered under the boundary conditions of the present model. The simulated results are found to be in good agreement with the experimental observations.     

First-Principles Prediction of High-Pressure Phase of CaC6

The lattice dynamics of rhombohedral GaG6 is studied as a function orpressure to probe Its high pressure phase with low superconducting transition temperature using the density functional liner-response theory. The pressureinduced phase transition in CaC6 is attributable to the softening transverse acoustic （TA） phonon mode at the zone boundary X （0.5, 0.0, 0.5） point. The high pressure phase is then explored by performing fully structural optimization in the supercell which accommodates the atomic displacements corresponding to the eigenvectors of the unstable mode of TA（X）. The high-pressure phase is predicted to be a monoclinic unit cell with space group P21/m.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

Five-Dimensional Cosmological Model with Variable G and A

Einstein＇s field equations with C and A both varying with time are considered in the presence of a perfect fluid for five-dimensional cosmological model in a way which conserves the energy momentum tensor of the matter content. Several sets of explicit solutions in the five-dimensional Kaluza-Klein type cosmological models with variable G and A are obtained. The diminishment of extra dimension with the evolution of the universe for the five-dimensional model is exhibited. The physical properties of the models are examined.     

Possible Way to Synthesize Superheavy Element Z=117

Within the framework of the dinuclear system model, the production of superheavy element Z = 117 in possible projectile-target combinations is analysed systematically. The calculated results show that the production cross sections are strongly dependent on the reaction systems. Optimal combinations, corresponding excitation energies and evaporation channels are proposed, such as the isotopes^248.249 Bk in ^48 Ca induced reactions in 3n evaporation channels and the reactions ^45Sc＋246.248Cm in 3n and 4n channels, and the system ^51 V＋ 244pu in 3n channel.