用紧耦合方法研究C4+和O6+与He原子碰撞

用双中心原子轨道紧耦合方法计算了C4+-He以及O6+-He碰撞的单俘获总截面,入射离子的能量范围为10～100keV/amu,所得计算结果在实验误差范围内与实验值很好符合.对满壳层入射离子,研究了单俘获截面随入射离子电荷态的变化,并讨论了原子轨道展开波函数数目对计算结果的影响.p     

High-Density Read-Only Memory Disc with Ag11In12Sb51Te26 Super-Resolution Mask Layer

A novel read-only memory (ROM) disc with an Ag11ln12Sb51Te26 super-resolution mask layer is proposed and investigated for the first time to our knowledge. The carrier-to-noise ratio of more than 40 dB could be obtained from small pits (380nm), which are below the readout resolution limit (400nm), in our dynamic setup with a wavelength of 632.8 nm and numerical aperture of 0.40. Dependences of carrier-to-noise ratio on readout power,readout velocity and film thickness are studied. The results show that the optimum film thickness is 20-50nm and the corresponding carrier-to-noise ratio is more than 40dB at readout power of 4mW and readout velocity of 2m/s in our experiment. The super-resolution readout mechanism for this ROM disc is also discussed.     

丹聂耳电池电动势产生的机理

 1836年,英国化学家丹聂耳(Daniell)发明了一种原理上最简单的化学电池,通常称之为丹聂耳电池。电动势是化学电池的一个重要的性能参数。而电动势等于单位正电荷由负极通过电池内部移到正极时电池内非静电力(化学力)所做的功。它取决于电极材料的化学性质,与电池的大小无关。因此,本文就从物理化学角度来探讨丹聂耳电池电动势产生的机理。丹聂耳电池的结构如图1所示。电池的两个电极锌板和铜板分别浸在ZnSO₄溶液和CuSO₄溶液中。     

增透膜的原理及常见问题的解答

增透膜也称减反膜，即能够减少反射光，增加透射光的薄膜．笔者在此简单分析一下光学镜头中所用的增透膜．     

中国银行间拆借利率扩散模型的极大拟似然估计

本文用极大拟似然估计法估计了中国银行间市场七天拆借利率扩散模型的参数。并用自助法对众多不同的模型进行了广义拟似然比检验。结论表明:中国货币市场利率具有均值回复效应:利率敏感系数γ值为1.421265,对利率水平具有较高敏感性。     

Efficient Multiparty Quantum Secret Sharing with Greenberger-Horne-Zeilinger States

An effcient multiparty quantum secret sharing scheme is proposed with Greenberger-Horne-Zeilinger （GHZ） states following some ideas in quantum dense coding. The agents take the single-photon measurements on the photons received for eavesdropping check and exploit the four local unitary operations Ⅰ, σx, σx and iσy to code their message. This scheme has the advantage of high capacity as each GHZ state can carry two bits of information. The parties do not need to announce the measuring bases for almost all the photons, which will reduce the classical information exchanged largely. The intrinsic efficiency for qubits and the total effciency both approach the maximal values.     

C59N单分子整流器

通过将单个C59N分子置于双势垒隧道结中，从而利用单电子隧穿效应和C59N分子的特殊能级结构，我们成功地实现了一种新型的单分子整流器件．实验中这个整流器件的正向导通电压约为0．5-0．7V，反向击穿电压约为1．6—1．8V．理论分析表明，中性C59N分子的半占据费米能级以及在不同充电情况下费米能级的不对称移动是形成整流效应的主要原因．其构成原理也决定了该器件具有稳定、易重复的特点．