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61.
Md. Naziruddin Khan A. S. AI-Dwayyan Z. H. Zaidi 《中国物理快报》2006,23(9):2407-2410
Chrysene and 1.2-benzanthracene are successfully doped in a solid wax film and their vibrational spectra in gooo--400cm^-1 are discussed. The harmonic frequencies and relative intensities of both the molecules observed in the film are compared with theoretical values calculated by the density functional theory (DFT) model as well as with the previous experimental data. The effects on spectra due to change of matrix and some additional bands observed in the wax film are also reported. Excellent agreement in the spectral positions and strengths between the experiments and DFT values are found. 相似文献
62.
通过光谱响应特性实验和记录/读出图像实验,研究了基因变异型细菌视紫红质(BRD96N)分子膜对单色光的光调制特性.发现BRD96N分子膜在550nm—600nm范围内对调制光有吸收增强的现象,且对此范围内不同波长的单色光其调制程度有差异.利用曲线拟和方法发现550nm—600nm吸收增强的变化过程分为快过程和慢过程,其对应的时间常数分别为30s和5min.利用强度调制器的吸收强度与图像灰度之间的关系,分析了560nm—600nm范围内出现图像反转的实验现象.
关键词:
细菌视紫红质D96N分子膜
光谱响应
吸收增强现象
图像反转现象 相似文献
63.
仇秋生 《南昌大学学报(理科版)》2002,26(3):218-221
在赋范线性空间中引入单调弱闭集等概念,讨论了不具有任意连续性的混合单调集值映射耦合不动点的存在性问题,并且给出了耦合不动点的求解步骤以及它的构造形式。 相似文献
64.
Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films 下载免费PDF全文
Helium-charged nanocrystalline titanium films have been deposited by HeAr magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60℃ to 350℃ while the other deposition'parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 20 angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening. 相似文献
65.
66.
Si衬底上ZnSe外延膜的低压MOCVD生长 总被引:2,自引:2,他引:0
以硒化氢(H2Se)和二甲基锌为源材料,生长温度是300℃时,用低压金属有机化学气相沉积(LP-MOCVD)系统在Si(111)衬底上外延生长了ZnSe薄膜。通过X射线衍射(XRD)、扫描电子显微镜的能量色散(EDS)以及光致发光(PL)实验验证ZnSe外延膜的质量,在X射线衍射谱中只有一个强的ZnSe(111)面衍射峰,这说明外延膜是(111)取向的单晶薄膜,在能量色散谱中除了Si,Zn和Se原子外,没有观测到其他原子,说明ZnSe外延膜中杂质含量较少。ZnSe外延膜中Zn/Se原子比接近1,有较好的化学配比。在ZnSe外延膜的77K光致发光谱中没有观测到与深中心发射相关的发光峰,表明ZnSe外延膜的晶格缺陷密度较小。77K时的近带边发射峰447nm在室温时移至465nm附近。 相似文献
67.
68.
We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics. 相似文献
69.
以己二酸酐和邻羟基苯甲酸为原料,制备了己二酸单(2-羧苯酚)酯,并以它为单体聚合得到了相应的聚酯酸酐.研究了温度、真空度对聚合物分子量的影响,得到了最佳的聚合条件:真空度66.66Pa,聚合温度200℃.在此条件下聚合2.5h,得到的聚己二酸单(2-羧苯酚)酯重均分子量达6498.另外,还对聚合物在不同pH值条件下的体外降解行为进行了研究. 相似文献
70.
The single-longitudinal-mode Nd:GdVO4/RTiOPO4 (RTP) solid-state Green laser operation of a laser-diode (LD) end-pumped laser is realized by multi-cavities and a Brewster plate. The LD-pumped single-frequency green laser has been demonstrated by optimizing several parameters and a cavity length, with precise temperature controlling of Nd:GdV04, RTP and laser diode. When the incident pump power is 2 W at 808.4 nm, a single-frequency cw green laser at 532nm with output 210 m W is obtained, the optical-to-optical conversion efficiency is up to 10.5%. 相似文献