可变抽样区间的非参数控制图

最近几年一些学者研究了可变抽样区间的质量控制图。Amin等提出了可变抽样区间(VSI)的非参数控制图———符号 (Sign)统计量图〔1〕。本文在此基础上研究位置VSI符号控制图的制定方法 ,并设计离散VSI符号控制图。符号控制图的优点是对非正态总体亦可应用 ,并且不需要过程方差的信息。本文将所设计的VSI符号控制图同固定抽样区间 (FSI)的常规图作比较 ,并举实例说明符号控制图的应用     

亚纯函数及其微分多项式的唯一性

设f是非常数亚纯函数,g是f的线性微分多项式．a和b是f的两个不同的小函数．本文证明如果f和g几乎CM分担a和b,则f≡g;此外,若f是非常数整函数,且f和f^(k)(k≥1)IM分担a和b,b-a≠Pe^λz,测f≡g．     

N指标d维广义Wiener过程象集的m项代数和的几个性质

设珮犠（狋）：犚犖＋ →犚犱是犖指标犱维广义Ｗｉｅｎｅｒ过程，对任意紧集犈１，…，犈犿犚犖＞ ，该文研究了犿项代数和珮犠（犈１）…珮犠（犈犿）的Ｈａｕｓｄｏｒｆｆ维数，Ｐａｃｋｉｎｇ维数和正的Ｌｅｂｅｓｇｕｅ测度及内点的存在性． 其结果包含并推广了布朗单的结果．     

On a bifurcation governed by hysteresis nonlinearity

We consider autonomous systems with a nonlinear part depending on a parameter and study Hopf bifurcations at infinity. The nonlinear part consists of the nonlinear functional term and the Prandtl--Ishlinskii hysteresis term. The linear part of the system has a special form such that the close-loop system can be considered as a hysteresis perturbation of a quasilinear Hamiltonian system. The Hamiltonian system has a continuum of arbitrarily large cycles for each value of the parameter. We present sufficient conditions for the existence of bifurcation points for the non-Hamiltonian system with hysteresis. These bifurcation points are determined by simple characteristics of the hysteresis nonlinearity.     

Electrical conduction and dielectric properties of vanadium phosphate glasses doped with lithium

AC conductivity and dielectric studies on vanadium phosphate glasses doped with lithium have been carried out in the frequency range 0.2-100 kHz and temperature range 290-493 K. The frequency dependence of the conductivity at higher frequencies in glasses obeys a power relationship, σ_ac=Aω^s. The obtained values of the power s lie in the range 0.5≤s≤1 for both undoped and doped with low lithium content which confirms the electron hopping between V⁴⁺ and V⁵⁺ ions. For doped glasses with high lithium content, the values of s≤0.5 which confirm the domination of ionic conductivity. The study of frequency dependence of both dielectric constant and dielectric loss showed a decrease with increasing frequency while they increase with increasing temperature. The results have been explained on the basis of frequency assistance of electron hopping besides the ionic polarization of the glasses. The bulk conductivity increases with increasing temperature whereas decreases with increasing lithium content which means a reduction of the V⁵⁺.     

Potential formation and high density plasma production on the tandem mirror GAMMA 10

GAMMA 10 experiments have advanced in high density experiments after the last EPS Workshop where we reported high density plasma production by using an ion cyclotron range of frequency heating at a high harmonic frequency and neutral beam injection in the central cell. Recently a high density plasma was obtained with much improved reproducibility than before and without degradation of diamagnetic signal. The high density plasma was attained by adjusting the spacing of the conducting plates installed in the anchor transition regions. Dependencies of particle confinement time, ion energy confinement time and plasma confining potential on plasma density were obtained for the first time in the high density region. Presented at 5th Workshop “Role of Electric Fields in Plasma Confinement and Exhaust”, Montreus, Switzerland, June 23–24, 2002.     

Mod 2 cohomology of combinatorial Grassmannians

Matroid bundles, introduced by MacPherson, are combinatorial analogues of real vector bundles. This paper sets up the foundations of matroid bundles. It defines a natural transformation from isomorphism classes of real vector bundles to isomorphism classes of matroid bundles. It then gives a transformation from matroid bundles to spherical quasifibrations, by showing that the geometric realization of a matroid bundle is a spherical quasifibration. The poset of oriented matroids of a fixed rank classifies matroid bundles, and the above transformations give a splitting from topology to combinatorics back to topology. A consequence is that the mod 2 cohomology of the poset of rank k oriented matroids (this poset classifies matroid bundles) contains the free polynomial ring on the first k Stiefel-Whitney classes.     

关于AOR迭代法的研究

本文论证了严格对角占优矩阵之AOR法的误差估计式中的误差估计常数hγ,ω（0≤γ≤ω0）的最小值是h1,1.     

线性分式规划最优解集的求法

本文使用多面集的表示定理，导出了线性分式规划最优解集的结构，并给出确定全部最优解的计算步骤。     

Banach空间中强增生型变分包含解的具误差的Ishikawa迭代逼近

该文研究Ｂａｎａｃｈ空间中一类强增生型变分包含解的存在性及其具误差的Ｉｓｈｉｋａｗａ迭代程序的收敛性问题．该文结果是几位作者早期与最近的相应结果的改进和推广．