界面条件下线型超声相控阵声场特性研究

开展了界面条件下线型超声相控阵声场特性的研究.将带有楔块的超声相控阵问题合理简化为液固界面的情况进行讨论.根据射线声学理论,计算了单阵元在液固界面存在时的辐射声场,进而推导了聚焦法则,得到了超声线型阵在液固界面存在时的声场、位移场表达式.对安装在楔块上的相控阵换能器的辐射声场进行了仿真,并讨论了聚焦对换能器轴向和横向声场的影响,结果表明利用聚焦能提高分辨率和灵敏度,但聚焦区域之外声束性能更差,在实际检测中要合理利用聚焦. 关键词： 超声相控阵 界面 声场 聚焦     

改进的含温有界原子模型对金的电子物态方程的计算

在改进的含温有界原子模型基础上,在中心场近似下用分波法来处理部分自由电子密度分布函数.通过平均近似处理,给出劈裂的能带.在原子结构的自洽计算中采用能带重叠作为自由电子的动态判据.大量计算了Au的电子压强、能量、热容以及各种热力学系数. 关键词： 自洽场原子结构 状态方程 原子能量 电子压强     

晶粒尺寸对气相沉积薄膜磁取向生长的影响研究

为了研究强磁场下薄膜取向生长规律,采用真空蒸发气相沉积法分别制备了不同磁场方向生长的Zn和Bi薄膜.XRD结果发现磁化率差异较小的Zn薄膜在4T时产生了明显的取向生长,而磁化率差异较大的Bi薄膜在5T磁场强度还没有发生取向生长.SEM结果显示Zn薄膜和Bi薄膜晶粒尺寸上有明显的差别,利用Zn薄膜在4T磁场下的取向建立晶粒尺寸和取向生长的对应关系,提出薄膜发生取向时晶粒的磁化能须大于热能kT的420倍.薄膜是否发生取向生长取决于三个因素:薄膜单个晶粒的大小V,材料不同晶向的磁化率差异Δ关键词： 强磁场 磁取向 薄膜生长 材料电磁加工     

电介质表面纵向射频电场对次级电子倍增效应的影响

基于次级电子倍增动力学模型和次级电子发射曲线,运用蒙特卡罗方法模拟电介质表面具有纵向射频电场作用下的单边次级电子倍增现象,研究次级电子倍增的表面电场敏感曲线和时间演化图像. 以一个S波段射频介质窗为例,计算次级电子在其介质表面的沉积功率. 结果表明,纵向射频电场可能加剧电介质表面的次级电子倍增效应,易于导致介质片破裂,不利于高频能量传输. 关键词： 纵向射频场 次级电子倍增效应 蒙特卡罗方法 功率沉积     

交换弹簧磁性多层膜的磁矩取向及磁滞回线的解析研究

本文以界面交换耦合常数Jⁱ和软磁相厚度L^s为主要参变量,研究了易轴与膜面平行情况下的Nd₂Fe₁₄B/α-Fe磁性多层膜的磁矩随外场变化的取向及磁滞回线,并得到了成核场的解析公式.分析发现,Jⁱ对磁矩取向、钉扎场和矫顽力机理有着较大的影响.当L^s较小时,钉扎场等于成核场,随着Jⁱ的减小 关键词： 成核场 钉扎场 矫顽力 磁滞回线     

强直流场介质表面次级电子倍增效应的数值模拟研究

通过粒子模拟方法,实现了强直流场下介质表面击穿过程中次级电子倍增效应的数值模拟.具体研究了强直流场场强、介质表面光滑度和次级电子产生率等对次级电子倍增的影响,以及倾斜直流场和外加磁场对次级电子倍增的抑制.结果表明,选择次级电子产生率较低的介质材料和倾斜强直流场可以有效降低次级电子倍增效应的强度,而外加磁场必须超过一定值时才可以有效降低次级电子倍增强度. 关键词： 次级电子倍增 强直流场 介质表面击穿 数值模拟     

漏致势垒降低效应对短沟道应变硅金属氧化物半导体场效应管阈值电压的影响

结合应变硅金属氧化物半导体场效应管(MOSFET)结构,通过求解二维泊松方程,得到了应变Si沟道的电势分布,并据此建立了短沟道应变硅NMOSFET的阈值电压模型.依据计算结果,详细分析了弛豫Si_1－βGe_β中锗组分β、沟道长度、漏电压、衬底掺杂浓度以及沟道掺杂浓度对阈值电压的影响,从而得到漏致势垒降低效应对小尺寸应变硅器件阈值电压的影响,对应变硅器件以及电路的设计具有重要的参考价值. 关键词： 应变硅金属氧化物半导体场效应管 漏致势垒降低 二维泊松方程 阈值电压模型     

Phase transition properties of the spin-1 Blume-Emery-Griffiths model with random transverse crystal field

Phase transition properties of a spin-1 Blume-Emery-Griffiths model (BEGM) with random transverse crystal field is studied by the effective field theory for a simple cubic lattice. In T−D_x space, we obtain the phase diagrams with the ratio α between the biquadratic interaction and the exchange interaction as well as a tunable parameter l of the transverse crystal field. The tricritical point (TCP) appears at α<0, which undergoes a crossover from positive to negative direction of the transverse crystal field when l<0. The TCP cannot be observed for α>0. The maximum critical temperature increases with the increase of α. The position of the peak value tends to the drift of negative or positive direction for a different magnitude or an imperfect (±) transverse crystal field distribution. In T−α space, the range of ordered phase is magnified when the ratio is changed from α<0 to α>0. The random transverse crystal field obviously affects the TCP.     

Acoustic field radiated into a transversely isotropic solid from a small aperture spherical surface

The acoustic field modelling reported in this paper finds application in the design of a scanning probe tip for measuring the near-surface elastic properties of solids and surface structures at high frequencies and with high spatial resolution. The underlying concept is for a longitudinally polarized pulse to be launched from a spherically-shaped portion of the upper surface of the pyramidal or conical shaped tip, and focused towards the narrow lower end. The change in the reflectivity when the narrow end is brought into contact with a solid will provide a measure of the local frequency dependent compliance of that solid. The calculations assume the material from which the tip is fabricated to be transversely isotropic, with symmetry axis coinciding with the axis of the tip. The main issue addressed in this paper is the role of the curvature of the radiating surface and anisotropy of the medium in determining the focal length and focal spread of the radiated field. Two complementary approaches are taken, firstly the discretization of the equations of motion on an irregular mesh of around 3 × 10⁵ triangular elements and solution using the commercial FE package ABAQUS/Explicit, and secondly an analytical approach based on ray tracing and a Green’s function method exploiting the angular spectrum method and stationary phase approximation in its evaluation. Consistency is achieved between these approaches regarding the characteristics of the focal region. With the combination of the two approaches it is thus possible to model the wave field from low frequencies, where the FE method is computationally economical and able to handle complex geometries, to high frequencies, where advantage increasingly lies with ray tracing and the Green’s function method.     

SiC晶体生长中流场的优化设计

物理气相输运法(PVT)是实验室最为常见的碳化硅(SiC)大块单晶生长方法.本文在碳化硅晶体生长模型化研究中,针对碳化硅单晶PVT生长过程中的传热传质等现象引入了对流传热中的场协同原理,利用这一原理对生长室内的流场温度场进行了优化,并对改良前后分别进行了数值模拟,研究了该原理对晶体生长的影响.实验室碳化硅单晶的生长成功...