Feasibility of self-correcting quantum memory and thermal stability of topological order

Recently, it has become apparent that the thermal stability of topologically ordered systems at finite temperature, as discussed in condensed matter physics, can be studied by addressing the feasibility of self-correcting quantum memory, as discussed in quantum information science. Here, with this correspondence in mind, we propose a model of quantum codes that may cover a large class of physically realizable quantum memory. The model is supported by a certain class of gapped spin Hamiltonians, called stabilizer Hamiltonians, with translation symmetries and a small number of ground states that does not grow with the system size. We show that the model does not work as self-correcting quantum memory due to a certain topological constraint on geometric shapes of its logical operators. This quantum coding theoretical result implies that systems covered or approximated by the model cannot have thermally stable topological order, meaning that systems cannot be stable against both thermal fluctuations and local perturbations simultaneously in two and three spatial dimensions.     

Carriers recombination processes in charge trapping memory cell by simulation

We have evaluated the effects of recombination processes in a charge storage layer, either between trapped electrons and trapped holes or between trapped carriers and free carriers, on charge trapping memory cell＇s performances by numerical simulation. Recombination is an indispensable mechanism in charge trapping memory. It helps charge convert process between negative and positive charges in the charge storage layer during charge trapping memory programming/erasing operation. It can affect the speed of programming and erasing operations.     

Phase transition characteristics of Ge–Sb–Te pseudobinary alloys in laser irradiation measurement

Optical switching and structural transformation of GeTe–Sb₂Te₃ pseudobinary alloys, Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇, were studied for data storage application. As-deposited Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, and Ge₁Sb₄Te₇ thin films were amorphous and they crystallized to FCC and HCP upon heat treatment. Crystallization was accelerated by increasing the proportion of Sb₂Te₃ rather than GeTe in Ge–Sb–Te compounds; this was observed by reflectivity changes under nanosecond laser irradiation in static tester. The different crystallization kinetics according to composition might be affected by the structural incompatibility of GeTe under the ‘Umbrella Flip’ theory.     

长余辉发光材料的紫外-可见反射光谱测定

用“湿法”制备了长余辉发光材料,原料通过水溶液液相分子水平上的均匀混合,利用金属硝酸盐和有机还原剂在较低的温度下发生氧化还原燃烧反应,一步快速生成产品。加热起燃温度低至500℃,反应时间短,所制得的产品成份均匀,晶粒小,外观呈蓬松状态,易研磨粉碎,粉体表观密度小。以紫外－可见分光光度计测定分析了所制备样品在蓄光前后的反射光谱特征并作了探讨。结果表明,除表观密度外,“显法”与“干法”制备的长余辉发光材料的主要性质相同,紫外－可见反射光谱可以准确描述长余辉发光材料的紫外－可见光谱性能特征。     

Convergence of Appell Polynomials of Long Range Dependent Moving Averages in Martingale Differences

We study limit distribution of partial sums S_N,k(t) = _{s = 1} ^{[N t]} A_k(X_s) of Appell polynomials of the long-range dependent moving average process X_t> = _{i t} b_{t - i i}, where {_i} is a strictly stationary and weakly dependent martingale difference sequence, and b_i i^{d - 1} (0 < d < 1/2). We show that if k(1-2 d)<1, then suitably normalized partial sums S_N,k(t) converge in distribution to the kth order Hermite process. This result generalizes the corresponding results of Surgailis, and Avram and Taqqu obtained in the case of the i.i.d. sequence { _i}.     

Relation of coordination number to memory and threshold switching in chalcogenides

The paper reports a structural study of some memory and threshold chalcogenides in terms of coordination numberC, defined byC=8−N, and is the average coordination number for covalently bonded materials. The average number of nearest neighbours surrounding a central atom, obtained for As-Ge-Te (memory) and Se-Ge-Te (threshold) systems have been used to estimate the cohesive energies, assuming simple additivity of bond energies. The bonding pattern so obtained, explains certain properties of these glasses.     

Thermomechanical properties of smart composites

The smart composite materials reinforced by SMA show a high performance and special deformation behavior. The thermomechanical constitutive formulas of the composites are derived by means of Eshelby's equivalent inclusion method and Mori-Tanaka's mean field concept. The interaction between the inclusion and crack and toughening mechanism are considered and the energy release rate of a crack in the smart composite is calculated. This work shows that there are the multiple mechanisms contributing to the toughening of the smart composite materials reinforced by SMA.This project is supported by the National Natural Science Foundation of China.     

Integrated Image Associative Memory and Its Optical Implementation

We present the concept of integrated processing to combine intuitive processing of neural networks with logical processing of the conventional digital computer. We investigate a way to embody the concept in the neural network system by introducing external constraints in terms of external input. The effect of the external input is analyzed using the generalized projection method. The concept of integrated processing is applied to an image associative memory system, and the system is optically implemented for high-speed parallel processing incorporating it with the computer. The experimental result is presented to illustrate the effectiveness of the external input to control the output of the image associative memory.