(a,b,n)-临界图的几个充分条件

设G是一个图 .设g和f是两个定义在V(G)上的整值函数使得对V(G)所有顶点x有g(x) ≤f(x) .图G被称为 (g ,f,n) 临界图 ,如果删去G的任意n个顶点后的子图都含有G的 (g ,f) 因子 .本文给出了图是 (a ,b ,n) 临界图几个充分条件 ,即度和邻域条件 .进一步指出这些条件是最佳的 .     

Interference Diagnosis of the Initial Stage of Laser-Produced-Plasma in Air

By using a Q-switched YAG Laser and a optical path delay set-up, we study the process in whith a laser induces breakdown to produce plasma in air, and obtain time-resolved Mach-Zehnder interferograms and optical shadowgrams of the initial stage of the plasma and the expansion wave produced in the process for the first time     

Application of the stabilization method to interacting resonances

The stabilization method is applied to the case of interacting resonances in the photo-dissociation of van der Waals clusters composed by a rare gas atom bound to a dihalogen molecule. The study of an illustrative two-dimensional model consisting in a T-shaped NeI₂ molecule shows the adequacy of the method whenever the projection of the stabilization wave functions on the assumed prepared initial state is accounted for. The agreement of the fragmentation cross-sections with some previous results using the effective resolvent method and accurate close-coupling calculations is excellent. The method reveals its utility as a complementary tool since allows, through the analysis of the stabilization wave function in terms of zero-order levels, a precise characterization of the resonant states involved. Received 5 April 2002 / Received in final form 24 May 2002 Published online 19 July 2002     

Study of HfSiO film prepared by electron beam evaporation for high-k gate dielectric applications

The purpose of this paper is to report some experimental results with HfSiO films formed on silicon substrates by electron beam evaporation (EB-PVD) and annealed at different temperatures. The images of atomic force microscope (AFM) indicated that HfSiO film annealed at 900 °C was still amorphous, with a surface roughness of 0.173 nm. X-ray photoelectron spectroscopy (XPS) analysis revealed that the chemical composition of the film was (HfO₂)₃(SiO₂) and Hf-Si-O bonds existed in the annealed film. Electrical measurements showed that the equivalent oxide thickness (EOT) was 4 nm, the dielectric constant was around 6, the breakdown voltage was 10 MV/cm, the fixed charge density was −1.2 × 10¹² cm⁻², and the leakage current was 0.4 μA/cm² at the gate bias of 2 V for 6 nm HfSiO film. The annealing after deposition effectively reduced trapping density and the leakage current, and eliminated hysteresis in the C-V curves. Annealing also induced SiO₂ growth at the interface.     

Dependence of excess bismuth content in precursor sols on ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films fabricated by chemical solution deposition

Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were fabricated on Pt/Ti/SiO₂/Si(1 0 0) substrates by chemical solution deposition (CSD), and the dependence of ferroelectric and dielectric properties of the as-deposited BLT thin films on excess Bi content in precursor sols was studied. It is found that the prepared BLT thin film shows the best polarization-electric field, capacitance-voltage and dielectric constant (?_r)-frequency characteristics, when the value of excess Bi content in precursor sols is 10%. In detail, its remnant polarization (2P_r) value is 40 μC/cm², the capacitance tunability is 21% measured at room temperature under conditions of an applied voltage of 8 V and measurement frequency of 10 kHz, and the ?_r is 696 at 100 kHz frequency.     

Transition to superfluidity in strongly coupled fermion systems: low density limit

The rôle of interacting bound pairs in strongly coupled fermion systems is considered in connection with the transition to superfluidity. Model calculations are performed for finite-range separable interaction potentials. The results of a cluster-Hartree-Fock approximation are compared with recent approaches improving the Nozières and Schmitt-Rink theory. In the low-density strong coupling limit, a first order transition to the superfluid phase is obtained.     

Scanning capacitance microscopy and spectroscopy applied to local charge modifications and characterization of nitride-oxide-silicon heterostructures

We have combined a home-built capacitance sensor with a commercial scanning force microscope to obtain a Scanning Capacitance Microscope (SCM). The SCM has been used to study Nitride-Oxide-Silicon (NOS) heterostructures which offer potential applications in charge storage technology. Charge writing and reading on a submicrometer scale is demonstrated with our SCM setup. In addition, SCM appears to be very useful for the characterization of subsurface defects in semiconductor devices which are inaccessible by most of the other scanning probe microscopies. Finally, we introduce a novel spectroscopic mode of SCM operation which offers combined voltage-dependent and spatially resolved information about inhomogeneous charge distributions in semiconductor devices.     

N－（2－环戊酮基丙酰基）－及N－（2－环己酮基丙酰基）－四氢噻唑－2－硫酮的合成及其醇解与胺解

以碘化－Ｎ－甲基－２－氯吡啶盐为缩合剂，在三乙胺存在下由３－（２－环戊酮基）丙酸及３－（２－环己酮基）丙酸分别同四氢噻唑－２－硫酮反应，得到新化合物Ｎ－（２－环戊酮基内酰基）四氢噻唑－２－硫酮（２ａ）及Ｎ－（２－环己酮基丙酰基）四氢噻唑－２－硫酮（２ｂ），产率分别为５２．９％和５１．０％，２ａ，ｂ分别同甲醇、乙醇反应得到相应的３－（２－环戊酮基）丙酸酯３ａ，ｂ及３－（２－环己酮基）丙酸酯３ｃ，ｄ，３ａ～ｄ的产率为７５～８７％；２ａ、ｂ分别同胺反应得到３－（２－环戊酮基）内酰胺４ａ、ｂ及３－（２－环己酮基）内酰胺４ｃ、ｄ，４ａ～ｄ产率为７８～９３％。     

Structural and electrochemical studies of annealed LiNiVO4 thin films

We prepared stoichiometric lithium nickel vanadate amorphous thin films by using r.f. magnetron sputtering under controlled oxygen partial pressure. The amorphous films were heated at various temperatures, 300–600 °C, for 8 h. The as‐deposited and annealed thin films were characterized by Rutherford backscattering spectroscopy, nuclear reaction analysis, Auger electron spectroscopy, X‐ray diffraction, scanning electron microscopy and atomic force microscopy. The electrochemical behavior of the various films was studied by the galvanostatic method. The cells were tested in a liquid electrolyte at room temperature, with lithium metal used as the counter and reference electrode. The best electrochemical storage value was obtained with the thin film annealed at 300 °C, which showed superior capacity and small capacity loss during cycling. Copyright © 2007 John Wiley & Sons, Ltd.     

A Polarographic Study of ϵ-Caprolactam Complexes of Uranium and Tellurium

The polarographic behaviour of uranium and tellurium has been studied in the presence of increasing concentration of complex forming agent viz. ?-caprolactam at pH 4.4 for U(VI) and at pH 10.0 for Te(IV) at μ=0.1 M KNO₃. In both cases the waves have been found to be diffusion controlled and irreversible. The values of kinetic parameters (σπ_a and K°_f,h) have been calculated as a function of the ligand concentration. Method is suitable for the quantitative determination of these metals individually and simultaneously with the effect of diverse ions.