PbTiO3/SrTiO3(010)异质界面上的周期性失配位错及电子富集

It is important to determine the effects of misfit dislocations and other defects on the domain structure, ferroelectricity, conductivity, and other physical properties of ferroelectric thin films to understand their ferroelectric and piezoelectric behaviors. Much attention has been given to ferroelectric PbTiO₃/SrTiO₃ or PbZr_0.2Ti_0.8O₃/SrTiO₃ heterointerfaces, at which improper ferroelectricity, a spin-polarized two-dimensional electron gas, and other physical phenomena have been found. However, those heterointerfaces were all (001) planes, and there has been no experimental studies on the growth of (010) PbTiO₃/SrTiO₃ heterointerface due to the 6.4% misfit between two materials. In this study, we selected an atomically flat (010) PbTiO₃/SrTiO₃ heterointerface grown using a two-step hydrothermal method as the research subject, and this is the first experimental report on that interface. Interfacial dislocations can play a significant role in causing dramatic changes in the Curie temperature and polarization distribution near the dislocation cores, especially when the size of a ferroelectric thin film is scaled down to the nanoscale. The results of previous studies on the effects of interfacial dislocations on the physical properties of ferroelectric thin films have been contradictory. Thus, this issue needs to be explored more deeply in the future. This study used aberration corrected scanning transmission electron microscopy (STEM) to study the atomic structure of a (010) PbTiO₃/SrTiO₃ heterointerface and found periodic misfit dislocations with a Burgers vector of a[001]. The extra planes at the dislocation cores could relieve the misfit strain between the two materials in the [001] direction and thus allowed the growth of such an atomically sharp heterointerface. Moreover, monochromated electron energy-loss spectroscopy with an atomic scale spatial resolution and high energy resolution was used to explore the charge distribution near the periodic misfit dislocation cores. The fine structure of the Ti L edge was quantitatively analyzed by linearly fitting the experimental spectra recorded at various locations near and at the misfit dislocation cores with the Ti³⁺ and Ti⁴⁺ reference spectra. Therefore, the accurate valence change of Ti could be determined, which corresponded to the charge distribution. The probable existence of an aggregation of electrons was found near the a[001] dislocation cores, and the density of the electrons calculated from the valence change was 0.26 electrons per unit cell. Based on an analysis of the fine structure of the oxygen K edge, it could be argued that the electrons aggregating at the dislocation cores came from the oxygen vacancies in the interior regions of the PbTiO₃. This aggregation of electrons will probably increase the electron conductivity along the dislocation line. The physics of two-dimensional charge distributions at oxide interfaces have been intensively studied, however, little attention had been given to the one-dimensional charge distribution. Therefore, the results of this study can stimulate research interest in exploring the influence of the interfacial dislocations on the physics of ferroelectric heterointerfaces.     

矩形平底渠道淹没水跃区的水头损失

研究了矩形平底明渠淹没水跃区的水头损失。根据Rajaratnam对淹没水跃区的流速分布、壁面切应力、最大流速的试验成果和Verhoff附壁射流区断面流速分布的计算公式,应用紊流边界层理论研究了淹没水跃区的边界层发展和沿程水头损失的计算方法。根据动量方程和能量方程研究了淹没水跃区的跃前断面水深、总水头损失、局部水头损失、消能率的计算方法。给出了淹没水跃区最大流速、紊流边界层厚度、沿程水头损失、总水头损失、局部水头损失、局部阻力系数、消能率的计算方法。研究表明:淹没水跃区的总水头损失是跃前断面弗劳德数、跃前水深和淹没度的函数,沿程水头损失和局部水头损失与跃前断面流速、水深、水跃长度、跃前断面的特征雷诺数和消力池宽度有关。淹没水跃区的水头损失主要是局部水头损失,消能率随着弗劳德数的增加而增加。     

存在偏振相关损失条件下偏振模色散的特点

偏振模色散和偏振相关损失的联合作用，会产生不规则的色散现象，这一点不能直接通过琼斯距阵本征分析法的运用进行描述。由此引出了对偏振模色散和偏振相关损失共存条件下的研究。通过对琼斯本征分析法进行修正，来分析存在偏振相关损失条件下偏振模色散的特征距阵，理论分析表明，由于偏振相关损失的影响，即使在忽略差分损耗频率相关性的条件下，偏振模色散的特征距阵也会产生根本性的变化。     

二次喉道扩压器对COIL的影响实验

 氧碘化学激光器分别采用二次喉道扩压器和8°扩压器时，对在不同阀门开度下的气流方向的壁面静压曲线和背压曲线，光轴壁面静压曲线，出口总压与上游压比值曲线，输出功率曲线进行了测量。对两种扩压器的数据进行了对比，结果表明：与8°扩压器相比，二次喉道扩压器能够有效隔离扩压器下游气流对光腔的干扰，显著减小捩区长度，并将转捩区控制在扩压器内。在激光器背压升高时，二次喉道扩压器的稳定性更强。     

高斯光束斜入射法布里-珀罗干涉腔后的反射光强分布

基于多光束干涉原理,推导了高斯光束斜入射法布里-珀罗干涉仪后的反射光强表达式.在此基础之上数值研究了入射角对高斯光束的反射特性的影响.研究结果表明:当法布里-珀罗干涉腔的腔长满足反共振时,随着入射角的增大,反射光的光强分散,峰值强度下降后呈现出幅度衰减的波动;峰值位置随着入射角的增大,呈现出幅度越来越小的振荡偏移;光斑大小随入射角的增大,呈现出幅度减小的振荡.     

高能p-A碰撞Drell-Yan过程中的初态核效应

核遮蔽和能量损失效应是p-A碰撞中两种重要的初态核效应. 本文利用从轻子-原子核深度非弹性散射实验数据中抽取的束缚核子的部分子分布函数, 在色弦模型中研究了Drell-Yan双轻子对产生过程中的能量损失效应. 通过对FNAL E772和E866实验数据的χ²分析, 得到夸克在冷核中的能量损失率为－dE/dz=2.06GeV/fm. 这和该模型理论预言的结果(－dE/dz～2GeV/fm)一致. 通过将理论计算结果与实验数据进行比较, 发现考虑到能量损失后能很好的解释实验现象.     

熵损失函数下两参数指数威布尔分布尺度参数的Bayes估计

本文给定一截尾样本，在熵损失函数下，研究了两参数指数威布尔分布尺度参数在先验伽玛分布下的Bayes估计，并给出了该参数的Bayes区间估计。     

静动干涉流动的分离涡模拟研究

本文基于一种并行高精度的静动交接面处理方法,采用了SA模型及基于SA的分离涡模拟DES方法,进行了某压气机静动干涉流动的计算.研究表明对本文算例,在微小分离处,如20%到80%叶高处,DES与SA计算出的流动损失相差很小;而在大分离处,如叶根叶顶处,DES结果与SA差别较大,并且DES可更好地描述涡结构.在叶顶处,DES计算出比SA更强的泄漏流动,导致更大的损失.在叶根处,DES计算出了明显的静叶动态尾迹涡脱落现象,这一现象导致了与SA不一样的损失机理,即脱落涡与动叶头部相撞而产生时序效应,从而使计算损失较小.同时,本文研究结果与之前对孤立静叶的研究是相互验证的.     

光干涉中光程差及半波损失

对光的干涉中光程差及半波损失问题作了分析 ,提供一种解答问题的方法和技巧     

09-0685(四次修改稿)_王亮 师义民 (逐步增加II型截尾下比例危险率模型的可靠性分析) 2010-03-05

基于逐步增加 II 型截尾样本，分别在均方损失和 Linex 损失下，利用 ML-II 方法研究了比例危险率模型的参数和可靠性指标的经验 Bayes 估计问题。为了研究估计结果的精确性，分析了一个实际应用例子，并利用 Monte-Carlo 方法给出一个数值模拟例子，结果表明在非对称 Linex 损失下，经验 Bayes 估计更具灵活性，且结果更加有效。