无定形硅的制备及其性能研究

随着非晶硅半导体材料研究的发展,人们发现非晶硅能够吸收18-50原子％的氢。这一结果引起了储氢材料研究者的极大兴趣.1978年,德国的Winstel首次用非晶硅来储存氢,并申请了用非晶硅作为储氢材料的专利.随后,日本、美国、德国的许多研究者相继开展了这方面的工作。     

Synthesis of Si-containing cyclic ureas

1,3-Bis[(triethoxysilyl)methyl]tetrahydropyrimidin-2-one and 1,3-bis[(dimethoxysilyl)methyl]tetrahydro-pyrimidin-2-one have been synthesized on interacting urea with N,N′-bis(silylmethyl)propylenamines (EtO)³⁻ⁿMe_nSiCH₂NH(CH₂)₃NHCH₂SiMe_n(OEt)_3−n (n = 0, 2). Their interaction with boron trichloride has been studied. The structures of all the compounds synthesized have been demonstrated by multinuclear NMR spectroscopy. Dedicated to the 50^th Anniversary of the Latvian Institute of Organic Synthesis __________ Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 2, pp. 238–244, February, 2007.     

Bildung siliciumorganischer Verbindungen. 110. Reaktionen von (Cl3Si)2CCl2, seiner Si-methylierten Derivate,von (Cl3Si)2CHCl, (Cl3Si)2C(Cl)Me und Me2CCl2 mit Silicium (Cu-Kat.)

Formation of Organosilicon Compounds. 110. Reactions of (Cl₃Si)₂CCl₂ and its Si-methylated Derivatives as well as of (Cl₃Si)₂CHCl, (Cl₃Si)₂C(Cl)Me and Me₂CCl₂ with Silicon (Cu cat.) The reactions of (Cl₃Si)₂CCl₂ 1 , its Si-methylated derivatives (Me₃Si)₂CCl₂ 8 , Me₃Si? CCl₂? SiMe₂Cl 9 , (ClMe₂Si)₂CCl₂ 10 , Me₃Si? CCl₂? SiMeCl₂ 11 , Cl₂MeSi? CCl₂? SiCl₃ 12 as well as of (Cl₃Si)₂CHCl 38 , (Cl₃Si)₂CClMe 39 and of Me₂CCl₂ with Si (Cu cat.) in a fluid bed reactor ( 38 and 39 also in a stirred solid bedreactor) arc presented. While (Cl₃Si)₂CCl₂ 1 yields C(SiCl₃)₄ 2 the 1,1,3,3-tetrachloro-2,2,4,4-tetrakis(trichlorsilyl)-1,3-disilacyclobutane Si₆C₂Cl₁₆ 3 and the related C-spiro linked disilacyclobutanes Si₈C₃Cl₂₀ 4 , Si₁₀C₄Cl₂₄ 5 , Si₁₂C₅Cl₂₈ 6 , Si₁₄C₆Cl₃₂ 7 this type of compounds is not obtained starting from the Si-methylated derivatives 8, 9, 10, 11 They Produce a number of variously Si-chlorinated and -methylated tetrasila- and trisilamethanes. However, Cl₂MeSi? CCl₂? SiCl₃ 12 forms besides of Si-chlorinated trisilamethanes also the disilacyclobutanes Si₆C₂Cl₁₅Me 34 and cis- and trans Si₆C₂Cl₁₄Me₂ 35 as well as the spiro-linked disilacyclobutanes Si₈C₃Cl₁₉Me 36 , Si₈C₃Cl₁₈Me₂ 37 . (Cl₃Si)₂CHCl 38 mainly yields HC(SiCl₃)₃ 31 and also the disilacyclobutanes cis- and trans-(Cl₃Si)HC(SiCl₂)₂CH(SiCl₃) 41 and (Cl₃Si)₂C(SiCl₂)₂CH(SiCl₃) 45 the 1,3,5-trisilacyclohexane [Cl₃Si(H)C? SiCl₂]₃ 44 as well as [(Cl₃Si)₂CH]₂SiCl₂, and (Cl₃Si)₂CClMe 39 mainly yields (Cl₃Si)₂C?CH₂and (Cl₃Si)₂besides of HC(SiCl₃)₃, MeC(SiCl₃)₃and (Cl₃Si)₃C? SiCl₂Me.,. Me₂CCl₂ 59 mainly yields Me(Cl)C?CH₂, Me₂CHCl and HCl₂Si? CMe₂? SiCl₃, besides of Me₂C(SiCl₃)₂ and Me₂C(SiCl₂H)₂ Compound 3 crystallizes triclinically in the space group P1 (Nr. 2) mit a = 900,3, b = 914,0, c = 855,3 pm, α = 116,45°, β = 101,44°, γ = 95,86° and one molecule per unit cell. Compound 4 crystallizes monoclinically in thc space group C2/c (no. 15) with a = 3158.3,b = I 103.7, c = 2037.4 pm, β = 1 16.62° and 8 molecules pcr unit cell. The disilacyclobutane ring of compound 3 is plane, showing a mean distance of d (Si-C) =19 1.8 pm and the usual deformations of endocyclic angles: α_Si = 94,2°> 85,8° = α_C.The spiro-linked disilacyclobutane rings of compound 4 are slightly folded by a mean angle of (19.0°). Their mean distances were found to be d (Si? C) = 190.4 pm relating to the central carbon atom and 192.0 pm to the outer ones, respectively. The deformations of endocyclic angles: α_Si = 93,9°> 84,4° = α_C are comparable to those of compound 3.     

Thermodynamic and kinetic parameters of elementary steps in gas-phase hydrolysis of SiF4. Quantum-chemical and FTIR spectroscopic studies

The energies and thermodynamic parameters of elementary steps in the proposed mechanism of silicon tetrafluoride hydrolysis in the gas phase were calculated by the ab initio quantum-chemical method (MP4//MP2/6-311G(2d,2p)) and the density functional theory (B3LYP/6-311G(2d,2p)). The proposed mechanism of gas-phase hydrolysis involves the formation of mono- and dihydroxy derivatives, hexafluorodisiloxane (SiF₃OSiF₃), and linear and cyclic siloxane polymers with the chain length from three to six Si—O and difluorosilanone units. According to the calculations, all reactions considered are endothermic and are characterized by positive Gibbs free energies. The initial hydrolysis steps can be presented with a high accuracy by two parallel processes: formation of trifluorohydroxysilane (SiF₃OH) and SiF₃OSiF₃. These are the most thermodynamically favorable among all reaction channels. The transition states of these elementary steps were found and their kinetic parameters were estimated (G = 132 and 147 kJ mol^–1, respectively). The calculation results were verified using FTIR spectroscopy of a mixture of gas-phase SiF₄ and water vapor. The comparison of the theoretical (absolute) intensities of bands in the IR spectra and integral absorption coefficients in the experimental IR spectrum made it possible to calculate the equilibrium concentrations of the reactants and equilibrium constants of elementary steps of formation of SiF₃OH and SiF₃OSiF₃, which agree with the theoretical values. The role of different derivatives in deep hydrolysis and possibilities of experimental detection of particular intermediates in the gas phase were discussed.     

硅元素的发展及其在生产科技与生活中的应用

半导体材料硅，在第三周期IVA族，核外有4个电子，具有较稳定的结构。简述了硅的发展应用史；从化学角度，对单质硅材料、二氧化硅材料、有机硅材料等几个典型材料的元素结构、制备工艺、反应机理和应用机理等方面进行详细分析；总结展望了硅元素未来的发展。     

Double even tempering of orbital exponents: Application to Roothaan-Hartree-Fock calculations for He through Xe in Slater-type basis sets

Summary Double even tempering (DET) of orbital exponents is proposed as a useful generalization of even tempering (ET). The DET scheme uses two sets of basis functions for each angular momentum. The two sets have different principal quantum numbers and their exponents are generated by two different geometric sequences. Roothaan-Hartree-Fock (RHF) calculations on the atoms from He through Xe using both ET and DET Slater-type basis sets of the same size are carried out to demonstrate the substantial improvement offered by the DET scheme. The DET scheme reduces the maximum deviation of the RHF energies relative to the Hartree-Fock limit from 1.4 to 0.3 millihartrees.     

半导体硅上激光诱导选择性电镀铜

在ｐ型硅上利用氩离子激光进行了选择性电镀铜的研究，考察了半导体表面处理条件、阴极偏压和激光强度对阴极光电流及空间选择性的影响．表面氧化膜和阳极钝化膜的存在使光电流降低近一个数量级，少量氧化膜可使选择性提高．外加阴极偏压和激光强度的增加导致光电流增大，选择性降低．将氢氟酸处理的硅片在电解液中放置１０～２０ｍｉｎ，于稳定电位附近，用较弱激光照射可获得选择性铜镀层     

Low-Temperature Reactions between Vaporizing Silicon and Carbon

A new model is proposed for reactions between solids assuming formation of product in the gas phase (pores) due to the reaction of vaporizing reagents. Experimental results are given for the first time, which convincingly show that the reaction between solid-phase silicon and carbon below 1050 °C to give thread-like silicon carbide occurs due to rapidly vaporizing silicon and carbon atoms.     

Features of laser desorption/ionization mass spectrometry fragmentation of vitamin B<Subscript>12</Subscript>

A comparative analysis of the laser desorption/ionization of vitamin B₁₂ by matrix-assisted laser desorption/ionization (MALDI) and desorption/ionization on porous silicon (DIOS) was carried out. The mass spectra obtained were interpreted and the pathways for ion formation and decomposition were established. The MALDI fragmentation of the positive vitamin B₁₂ ions is more extensive than the DIOS fragmentation. The most extensive fragmentation was found using the MALDI method for negative vitamin B₁₂ ions, which are lacking when using the DIOS method. __________ Translated from Teoreticheskaya i éksperimental’naya Khimiya, Vol. 43, No. 4, pp. 251–256, July–August, 2007.