离子辐照引起的金属／绝缘体界面混合与相变研究

载能离子穿过固体界面引起界面原子迁移使界面原子混合和物质成分变化，从而导致界面发生材料相变。简要介绍了载能离子辐照引起金属／绝缘体界面混合效应及相变现象的主要实验研究进展、低能离子和高能离子辐照引起金属／绝缘体界面现象差异，并对离子辐照引起界面混合及相变的机制进行了初步探讨。When penetrating an interface between two kind of solids, energetic ions can induce atomic diffusion at both sides of the interface and then result in intermixing, atom re-distribution or composition change, as well as phase transformation. Main progress on the study of intermixing and phase change at metal/insulator interface induced by energetic ion irradiations, the difference of phenomena occurred at metal/insulator interfaces induced by high-and low-energy ions were briefly reviewed. Furthermore, the possible mechanisms related to intermixing and phase change at metal/insulator interface produced by energetic ion irradiations were also discussed in short words.     

金属冲击温度的辐射法测量问题

 金属的冲击温度及熔化温度测量对构建其完全状态方程具有重要意义。简要综述了用于金属冲击温度及熔化温度辐射法测量的一维热传导理想界面模型和非理想界面模型，并着重对模型中明示或隐含的关键假定的合理性、影响金属冲击温度与熔化温度结果的主要因素进行了分析、讨论，以期对实验数据有一个合理的评估。还讨论了求解理想和非理想界面模型一维热传导方程界面温度时所隐含的冲击压缩下热导率不随温度而变、冲击压缩下金属样品/窗口界面辐射的灰体假定，以及窗口材料的透明性、非理想界面模型中表观界面温度的修正、动载条件下金属高压熔化温度的测量、界面的非Flourier热传导等问题。分析结果表明，目前采用辐射法测量大致可以得到冲击温度，在发生熔化的情况下可获得熔化温度，但离精密测量的要求还有较大差距。     

流-固界面波的激光激发与光偏转检测

基于光偏转原理,研制了可用于流-固界面波探测的光纤传感装置.在此基础上,建立了以调Q Nd∶YAG激光为流-固界面波激发光源的实验系统.实验上探测了激光在空气-铝、水-铝和酒精-铝等界面上激发的界面波波形.根据实验波形,算得在这三种界面上的泄漏Rayleigh波和Scholte波的速度分别为2889 m/s和339 m/s、2916 m/s和1512 m/s、2872 m/s和1184 m/s,此实验值与理论计算值相比,偏差小于5％.     

响应变量随机缺失下的半参变系数模型的均值估计

在响应变量随机缺失时,研究了半参数变系数模型响应变量均值的借补估计.首先利用完整个体估计模型中的参数与非参数部分,然后再用借补方法与加权借补方法估计响应变量的均值.最后求出了估计的渐近偏差与渐近方差,研究了所得到的估计的渐近性质,并进行模拟比较.     

Controlled structure and density of “living” polystyrene brushes on flat silica surfaces

Thin layers of polystyrene were grown from surface-grafted nitroxide initiators via controlled “living” free radical polymerization. The “reactive” Langmuir-Blodgett deposition method allowed an effective control of the initiator layer density leading to PS brushes with different and high grafting density and stretching. The influence of the grafting density on the layer structure was studied. Comparison with theoretical predictions for monodispersed brushes in bad solvent was discussed. The thickness was found to vary linearly with molecular weight and the density dependence was shown using wetting measurements. Special features of controlled radical nitroxide polymerization from a surface were discussed. A direct comparison of the molecular weight and polydispersity between surface and bulk polymers was made by de-grafting the brushes into a toluene/HF solution. Finally, some evidence of a “surface Fischer” effect was shown from re-initiated layers. Received 20 December 2001     

A CLASS OF r-POINT (r+1)ST-ORDER A-STABLE ONE-BLOCK METHODS WITH DAMPING AT THE INFINITE POINT

1　ＩｎｔｒｏｄｕｃｔｉｏｎＦｏｒｓｏｌｖｉｎｇｓｔｉｆｆｉｎｉｔｉａｌｖａｌｕｅｐｒｏｂｌｅｍｓｆｏｒｓｙｓｔｅｍｓｏｆＯＤＥｓｙ′=ｆ(ｙ) ,ｙ(ｔ0 ) =ｙ0 ,ｔ0 <ｔ≤Ｔ ,ｙ0 ,ｙ∈Ｒｍ,ｆ :Ω Ｒｍ →Ｒｍ (1 .1 )ｍａｎｙｐａｒｔｉｃｕｌａｒｏｎｅ ｂｌｏｃｋｍｅｔｈｏｄｓｏｆｔｈｅｆｏｒｍＹｎ+1= ＡＹｎ+ｈ( Ｂ0 Ｆ(Ｙｎ) + Ｂ1Ｆ(Ｙｎ+1) ) , Ａ =Ａ Ｉｍ, Ｂｉ=Ｂｉ Ｉｍ,Ａ ,Ｂｉ∈Ｒｒ×ｒ,Ｙｎ =(ＹＴｎｒ,… ,ｙＴ(ｎ+1)ｒ- 1) Ｔ,Ｆ(Ｙｎ) =(ｆＴ(ｙｎｒ) ,… ,ｆＴ(ｙ(ｎ+1)ｒ- 1) ) Ｔ,ｙｊ≈ ｙ(ｔｊ) ,…     

Identity of defect causing nonideality in nearly ideal Au/n-Si Schottky barriers

We have proposed a mechanism of nonideality, i.e., the temperature dependence of the ideality factor, in nearly ideal Au/n-Si Schottky barriers. Because of the nature of metal-induced gap states, positively ionized defects close to the interface are considered to cause local lowering of the Schottky barrier height (SBH) due to downward bending of the energy band. These positively charged defects become neutralized in equilibrium with the Fermi level due to the band bending, when they are very close to the interface. However, because the SBH lowering disappears by the neutralization of donor, the energy level of donor with a usual energy level scheme rises above the Fermi level after the neutralization. This contradiction to the equilibrium neutralization is resolved by Si self-interstitial with a large negative-U property, which is generated by the fabrication process. The energy level of the donor estimated from the SBH lowering is in good agreement with that of theoretical calculation of Si self-interstitial. Thus, the defect is concluded to be the Si self-interstitial, which is distributed to more than 10 Å depth from the interface.     

电沉积n—CdSe在多硫溶液界面上的电荷转移机理

通过测定平带电位,澄清了OH~-离子在CdSe电极上的吸附情况,发现在S、S~(2-)、OH~-溶液中S~(2-)离子优先吸附,结合旋转环盘电极测量,证明n-CdSe电极在多硫溶液界面上的电荷转移过程。     

Bifurcation and Isochronicity at Infinity in a Class of Cubic Polynomial Vector Fields

In this paper, we study the appearance of limit cycles from the equator and isochronicity of infinity in polynomial vector fields with no singular points at infinity. We give a recursive formula to compute the singular point quantities of a class of cubic polynomial systems, which is used to calculate the first seven singular point quantities. Further, we prove that such a cubic vector field can have maximal seven limit cycles in the neighborhood of infinity. We actually and construct a system that has seven limit cycles. The positions of these limit cycles can be given exactly without constructing the Poincare cycle fields. The technique employed in this work is essentially different from the previously widely used ones. Finally, the isochronous center conditions at infinity are given.     

Intermixing during epitaxial growth and Mössbauer spectroscopy with probe layers

Mössbauer spectroscopy with ⁵⁷Fe (¹¹⁹Sn) probe layers is a useful method to study the local magnetic structures at buried interfaces. However interface alloying, which always exists in the real samples, have to be taken into account for accurate interpretation of experimental data. We developed an algorithm, which describes the interface intermixing in the multilayers. Substituting deposited atoms by atoms of substrate and floating of deposited atoms in the upper layers during epitaxial growth leads to the formation of asymmetric chemical and magnetic interfaces. This asymmetry in the M₁/M₂ superlattices can explain the difference between magnetic responses from M₁ on M₂ and M₂ on M₁ interfaces which were observed in experiments. Applying this intermixing model to the systems with probe layers located at different distances from the interfaces gives the natural explanation of hyperfine fields distributions on probe atoms and helps us clarify some discrepancies reported in the literature.