细菌纤维素菌株超高压诱变选育及其发酵培养基的优化

 为了获得高产细菌纤维素菌株,对初选的细菌纤维素菌株J₂进行超高压诱变,运用Plackett-Burman设计对影响高压诱变菌株生产细菌纤维素的因素效应进行评价,采用Box-Behnken试验优化发酵培养基组成。试验结果表明,超高压诱变压力、时间对细菌纤维素菌株有显著或极显著影响。细菌纤维素菌株高压诱变条件为压力250 MPa、时间15 min、温度25 ℃。经超高压诱变,获得产纤维素能力高、遗传稳定性好的诱变菌株M₄₃₈。影响诱变菌株M₄₃₈发酵生产细菌纤维素的关键因子是酵母浸出汁、MgSO₄和无水乙醇。优化的发酵培养基为碳源5%（葡萄糖∶蔗糖为4∶1）、酵母浸出汁1.25%、CaCl₂0 15%、ZnSO₄ 0.20%、K₂HPO₄ 0.20%、MgSO₄ 0.93%、富马酸0.30%、无水乙醇0.50%。利用此培养基培养诱变细菌纤维素菌株M₄₃₈,其纤维素产量是优化前的1.84倍,是超高压诱变之前的2.69倍。超高压技术用于细菌纤维素菌株的诱变育种是可行的。发酵培养基的优化可显著提高菌株M₄₃₈发酵生产细菌纤维素的能力。     

纤锌矿GaN/AlxGa1-xN应变柱形量子点中杂质态结合能及其压力效应

考虑应变及流体静压力,在有效质量近似下,利用变分法计算了无限高GaN/Al<,x>Ga<,1-x>N应变柱形量子点中类氢杂质结合能.结果表明,在量子点尺寸较小情况下,应变增加了杂质态结合能;而在量子点尺寸较大情况下,应变降低了杂质态结合能.随着Al摩尔分数的增加,杂质态结合能减小.杂质态结合能随着流体静压力的增加而增大...     

Anisotropy models in precise crystallite size determination of mechanically alloyed powders

Nanocrystalline AA 4032 alloy powder was synthesized by high-energy ball milling from elemental powders for 30 h duration. XRD and TEM results reveal that the powder is cubic and nanocrystalline in nature. X-ray peak broadening analysis was used to evaluate the lattice strain and the crystallite size using the Williamson-Hall analysis with three different models viz., uniform deformation, uniform deformation stress and uniform deformation energy density. The root mean square (RMS) strain was calculated from the interplanar spacing and the strain estimated from the three models. The three models yield different strain values due to the anisotropic nature of the material. The energy density model is proposed to be the best fit model among the three as severe lattice strain is associated with ball milled powders.     

Fe1.01Se0.4Te0.6单晶的超导电性研究

本文采用自助溶剂法生长得到Fe1.01Se0.4Te0.6单晶样品,超导零电阻温度Tczero=11.0 K,部分样品经400℃进行48小时退火之后,超导零电阻温度变为Tczero=7.0K.分析表明退火后样品的Fe含量变大,超导电性被部分抑制.通过磁场下电阻率-温度曲线的实验测量,用WHH(Werthamer-Helfand-Hohenberg)方法估算得到退火前后样品在0K附近的上临界场分别为83.2T和61.3T.上临界场μ0Hc2(T)随温度变化曲线在0T附近向高温方向上翘,说明样品具有"二流体"行为.直流磁化曲线在40K和120K分别出现向下弯曲,40K处的变化可能对应于过量Fe的自旋冻结.应变测量结果显示样品在117K时应变值发生一个突变,变化量约为晶格参数的0.06%,显示样品发生一个结构相变.因此,120K处的磁化下降对应于样品从四方相到正交相的结构转变.     

AlN/InN和AlN/GaN超晶格能带结构研究

利用Krönig-Penney 模型和形变势理论,从理论上探讨了纤锌矿型AlN/InN和AlN/GaN超晶格系统的能带结构及不同应变模式对能带结构的影响,计算得到了能带结构随各亚层参量变化的一般性规律、超晶格的能量色散关系、应变造成的影响以及不同亚层厚度的系统禁带宽度和导带第一子禁带宽度.研究发现,通过改变亚层厚度可以从不同形式设计能带结构,应变会改变系统禁带宽度,使带阶和子能带明显窄化,价带结构趋于复杂甚至生成准能带结构.与实验结果对比后发现,该模型适于模拟窄势阱结构超晶格,而对于宽势阱则必须 关键词： AlN/InN和AlN/GaN超晶格 Krönig-Penney模型 应变 子能带     

Is fullerene C60 large enough to host an aromatic molecule?

The endohedral complex of fullerene with benzene was studied with computational chemistry methods. The changes of structural parameters, such as bond lengths of host and guest and volume increments accompanying complex formation, were investigated, as well as the transfer of electron density between host and guest. The results obtained with three DFT functionals, which were recently designed for weak interactions, were compared. A three‐centered hydrogen bond between H atom of benzene and two atoms of fullerene was found. © 2010 Wiley Periodicals, Inc. Int J Quantum Chem, 2011     

Cyclobutanes in catalysis

The exploitation of ring strain as a driving force to facilitate chemical reactions is a well‐appreciated principle in organic chemistry. The most prominent and most frequently used compound classes in this respect are oxiranes and cyclopropanes. For rather a long time, cyclobutanes lagged behind these three‐membered‐ring compounds in their development as reactive substrates, but during the past decade an increasing number of useful reactions of four‐membered‐ring substrates have emerged. This Minireview examines corresponding catalytic reactions ranging from Lewis or Brønsted acid catalyzed processes to enzymatic reactions. The main focus is placed on transition‐metal‐catalyzed C C bond‐insertion and β‐carbon‐elimination processes, which enable exciting downstream reactions that deliver versatile building blocks.     

刮膜蒸发器内非牛顿流体流场特性数值模拟

刮膜蒸发器是通过旋转刮板强制成膜,可实现高黏度非牛顿流体类物料平稳蒸发的新型高效蒸发器.蒸发器内流体的流动、分布与传输机制直接决定了蒸发器的蒸发效率与功耗.不同于现有研究主要基于牛顿流体开展,本文针对不同黏度的非牛顿流体,建立蒸发器三维计算流体动力学模型,系统研究了蒸发器内的流场分布特性和成膜机理.结果表明:低黏非牛顿流体的流场分布特性和牛顿流体类似,物料可在壁面形成均匀且连续的液膜;随着黏度的增加,液膜的均匀性和连续性逐渐变差.通过对流场分布与传输形式的研究,结合液膜分布、速度分布、剪应变率分布,以及黏度分布进行对比分析发现,蒸发器内部结构与运行状态形成的剪切场与黏度分布是蒸发器良好成膜的关键.此外,提出对刮板前缘进行弯折可辅助高黏流体液膜铺展,并对最佳弯折角度进行探索.本研究为刮膜蒸发器的设计和应用提供了理论指导与依据.     

Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain

Reducing the Schottky barrier height (SBH) and even achieving the transition from Schottky contacts to Ohmic contacts are key challenges of achieving high energy efficiency and high-performance power devices. In this paper, the modulation effects of biaxial strain on the electronic properties and Schottky barrier of MoSi₂N₄ (MSN)/graphene and WSi₂N₄ (WSN)/graphene heterojunctions are examined by using first principles calculations. After the construction of heterojunctions, the electronic structures of MSN, WSN, and graphene are well preserved. Herein, we show that by applying suitable external strain to a heterojunction stacked by MSN or WSN — an emerging two-dimensional (2D) semiconductor family with excellent mechanical properties — and graphene, the heterojunction can be transformed from Schottky p-type contacts into n-type contacts, even highly efficient Ohmic contacts, making it of critical importance to unleash the tremendous potentials of graphene-based van der Waals (vdW) heterojunctions. Not only are these findings invaluable for designing high-performance graphene-based electronic devices, but also they provide an effective route to realizing dynamic switching either between n-type and p-type Schottky contacts, or between Schottky contacts and Ohmic contacts.